41 resultados para Single crystal substrates
Resumo:
An orthorhombic DyMnO3 single crystal has been studied in magnetic fields up to 14 T and between 3 K and room temperature. The field dependent ordering temperature of Dy moments is deduced. The paramagnetic Curie Weiss behavior is related mainly to the Dy3+sublattice whereas the Mn sublattice contribution plays a secondary role. DC magnetization measurements show marked anisotropic features, related to the anisotropic structure of a cubic system stretched along a body diagonal, with a magnetic easy axis parallel to the crystallographic b axis. A temperature and field dependent spin flop transition is observed below 9 K, when relatively weak magnetocrystalline anisotropy is overcome by magnetic fields up to 1.6 T. © 2013 Elsevier B.V.
Resumo:
The critical currents of coated conductors fabricated by metal-organic deposition (MOD) on rolling-assisted biaxially textured substrates (RABiTS) and by pulsed laser deposition (PLD) on ion-beam assisted deposition (IBAD) templates have been measured as a function of magnetic field orientation and compared to films grown on single crystal substrates. By varying the orientation of magnetic field applied in the plane of the film, we are able to determine the extent to which current flow in each type of conductor is percolative. Standard MOD/RABiTS conductors have also been compared to samples whose grain boundaries have been doped by diffusing Ca from an overlayer. We find that undoped MOD/RABiTS tapes have a less anisotropic in-plane field dependence than PLD/IBAD tapes and that the uniformity of critical current as a function of in-plane field angle is greater for MOD/RABiTS samples doped with Ca. (C) 2005 American Institute of Physics.
Resumo:
It becomes increasingly difficult to make continuous metal lines with well defined thickness and edges by the lift-off technique as the line width is decreased. We describe in this paper a technique in which the combination of high resolution electron beam lithography and ionized cluster beam (ICB) deposition has enabled very high quality gold lines ({all equal to}25nm wide) to be obtained on thick single crystal silicon substrates. © 1990.
Resumo:
The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure. © 2007 Elsevier B.V. All rights reserved.
Resumo:
Optimised ultrafast laser ablation can result in almost complete ionisation of the target material and the formation of a high velocity plasma jet. Collisions with the ambient gas behind the shock front cools the material resulting in the formation of mainly spherical, single crystal nanoscale particles in the condensate. This work characterises the nanoscale structures produced by the ultrafast laser interactions in He atmospheres at STP with Ni and Al. High resolution transmission electron microscopy was employed to study the microstructure of the condensates and to classify the production of particles forms as a function of the illumination conditions.
Resumo:
Alumina ceramic, Al2O3, presents a challenge to laser micro-structuring due to its neglible linear absorption coefficient in the optical region coupled with its physical properties such as extremely high melting point and high thermal conductivity. In this work, we demonstrate clean micro-structuring of alumina using NIR (λ=775 nm) ultrafast optical pulses with 180 fs duration at 1kHz repetition rate. Sub-picosecond pulses can minimise thermal effects along with collateral damage when processing conditions are optimised, consequently, observed edge quality is excellent in this regime. We present results of changing micro-structure and morphology during ultrafast processing along with measured ablation rates and characteristics of developing surface relief. Initial crystalline phase (alpha Al2O3) is unaltered by femtosecond processing. Multi-pulse ablation threshold fluence Fth, ∼ 1.1 Jcm-2 and at low fluence ∼ 3 Jcm -2, independent of machined depth, there appears to remain a ∼ 2 μm thick rapidly re-melted layer. On the other hand, micro-structuring at high fluence F ∼ 21 Jcm-2 shows no evidence of melting and the machined surface is covered with a fine layer of debris, loosely attached. The nature of debris produced by femtosecond ablation has been investigated and consists mainly of alumina nanoparticles with diameters from 20 nm to 1 micron with average diameter ∼ 300 nm. Electron diffraction shows these particles to be essentially single crystal in nature. By developing a holographic technique, we have demonstrated periodic micrometer level structuring on polished samples of this extremely hard material.
Resumo:
We present a technique for independently exciting two resonant modes of vibration in a single-crystal silicon bulk mode microresonator using the same electrode configuration through control of the polarity of the DC actuation voltage. Applications of this technique may include built-in temperature compensation by the simultaneous selective excitation of two closely spaced modes that may have different temperature coefficients of resonant frequency. The technique is simple and requires minimum circuit overhead for implementation. The technique is implemented on square plate resonators with quality factors as high as 3.06 × 106. Copyright © 2008 by ASME.
Resumo:
This paper reports on the design and electrical characterization of a single crystal silicon micromechanical square-plate resonator. The microresonator has been excited in the anti-symmetrical wine glass mode at a resonant frequency of 5.166 MHz and exhibits an impressive quality factor (Q) of 3.7 × 106 at a pressure of 33 mtorr. The device has been fabricated in a commercial foundry process. An associated motional resistance of approximately 50 kΩ using a dc bias voltage of 60 V is measured for a transduction gap of 2 νm due to the ultra-high Q of the resonator. This result corresponds to a frequency-Q product of 1.9 × 1013, the highest reported for a fundamental mode single-crystal silicon resonator and on par with some of the best quartz crystal resonators. The results are indicative of the superior performance of silicon as a mechanical material, and show that the wine glass resonant mode is beneficial for achieving high quality factors allowed by the material limit. © 2009 IOP Publishing Ltd.
Resumo:
Abstract-This paper reports a single-crystal silicon mass sensor based on a square-plate resonant structure excited in the wine glass bulk acoustic mode at a resonant frequency of 2.065 MHz and an impressive quality factor of 4 million at 12 mtorr pressure. Mass loading on the resonator results in a linear downshift in the resonant frequency of this device, wherein the measured sensitivity is found to be 175 Hz cm2/μg. The silicon resonator is embedded in an oscillator feedback loop, which has a short-term frequency stability of 3 mHz (approximately 1.5 ppb) at an operating pressure of 3.2 mtorr, corresponding to an equivalent mass noise floor of 17 pg/cm2. Possible applications of this device include thin film monitoring and gas sensing, with the potential added benefits of scalability and integration with CMOS technology. © 2008 IEEE.
Resumo:
We report on the experimental characterization of a single crystal silicon square-plate microresonator. The resonator is excited in the square wine glass (SWG) mode at a mechanical resonance frequency of 2.065 MHz. The resonator displays quality factor of 9660 in air and an ultra-high quality factor of Q = 4.05 × 106 in 12 mtorr vacuum. The SWG mode may be described as a square plate that contracts along one axis in the fabrication plane, while simultaneously extending along an orthogonal axis in the same plane. The resonant structure is addressed in a 2-terminal configuration by utilizing equal and opposite drive polarities on surrounding capacitor electrodes, thereby decreasing the motional resistance of the resonator. The resonant micromechanical device has been fabricated in a commercial silicon-on-insulator process through the MEMSCAP foundry utilising a minimum electrostatic gap of 2 μm. © 2008 IEEE.