Modeling of MOS-side carrier injection in trench-gate IGBTs

A compact trench-gate IGBT model that captures MOS-side carrier injection is developed. The model retains the simplicity of a one-dimensional solution to the ambipolar diffusion equation, but at the same time captures MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms. © 2007 IEEE.

Using a semiconductor optical amplifier integrated with a pump laser for mid-span spectral inversion and wavelength conversion

A semiconductor optical amplifier monolithically integrated with a distributed feedback pump laser is used for non-degenerate four wave mixing applications. Experimental results are presented which illustrate the use of this compact device for both wavelength conversion and dispersion compensation applications at high data rates.