Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition

The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed. © 2005 IEEE.

A fixed-grid b-spline finite element technique for fluid-structure interaction

We present a fixed-grid finite element technique for fluid-structure interaction problems involving incompressible viscous flows and thin structures. The flow equations are discretised with isoparametric b-spline basis functions defined on a logically Cartesian grid. In addition, the previously proposed subdivision-stabilisation technique is used to ensure inf-sup stability. The beam equations are discretised with b-splines and the shell equations with subdivision basis functions, both leading to a rotation-free formulation. The interface conditions between the fluid and the structure are enforced with the Nitsche technique. The resulting coupled system of equations is solved with a Dirichlet-Robin partitioning scheme, and the fluid equations are solved with a pressure-correction method. Auxiliary techniques employed for improving numerical robustness include the level-set based implicit representation of the structure interface on the fluid grid, a cut-cell integration algorithm based on marching tetrahedra and the conservative data transfer between the fluid and structure discretisations. A number of verification and validation examples, primarily motivated by animal locomotion in air or water, demonstrate the robustness and efficiency of our approach. © 2013 John Wiley & Sons, Ltd.