Enforcing RFID data visibility restrictions using XACML security policies

Radio Frequency Identification (RFID) technology allows automatic data capture from tagged objects moving in a supply chain. This data can be very useful if it is used to answer traceability queries, however it is distributed across many different repositories, owned by different companies. © 2012 IEEE.

Concentration dependence of the Er3+ visible and infrared luminescence in Y2-x Erx O3 thin films on Si

Y2-x Erx O3 thin films, with x varying between 0 and 0.72, have been successfully grown on crystalline silicon (c-Si) substrates by radio-frequency magnetron cosputtering of Y2 O 3 and Er2 O3 targets. As-deposited films are polycrystalline, showing the body-centered cubic structure of Y2 O3, and show only a slight lattice parameter contraction when x is increased, owing to the insertion of Er ions. All the films exhibit intense Er-related optical emission at room temperature both in the visible and infrared regions. By studying the optical properties for different excitation conditions and for different Er contents, all the mechanisms (i.e., cross relaxations, up-conversions, and energy transfers to impurities) responsible for the photoluminescence (PL) emission have been identified, and the existence of two different well-defined Er concentration regimes has been demonstrated. In the low concentration regime (x up to 0.05, Er-doped regime), the visible PL emission reaches its highest intensity, owing to the influence of up-conversions, thus giving the possibility of using Y2-x Er x O3 films as an up-converting layer in the rear of silicon solar cells. However, most of the excited Er ions populate the first two excited levels 4I11/2 and 4I13/2, and above a certain excitation flux a population inversion condition between the former and the latter is achieved, opening the route for the realization of amplifiers at 2.75 μm. Instead, in the high concentration regime (Er-compound regime), an increase in the nonradiative decay rates is observed, owing to the occurrence of cross relaxations or energy transfers to impurities. As a consequence, the PL emission at 1.54 μm becomes the most intense, thus determining possible applications for Y2-x Erx O 3 as an infrared emitting material. © 2009 American Institute of Physics.

High-density remote plasma sputtering of high-dielectric-constant amorphous hafnium oxide films

Hafnium oxide (HfOx) is a high dielectric constant (k) oxide which has been identified as being suitable for use as the gate dielectric in thin film transistors (TFTs). Amorphous materials are preferred for a gate dielectric, but it has been an ongoing challenge to produce amorphous HfOx while maintaining a high dielectric constant. A technique called high target utilization sputtering (HiTUS) is demonstrated to be capable of depositing high-k amorphous HfOx thin films at room temperature. The plasma is generated in a remote chamber, allowing higher rate deposition of films with minimal ion damage. Compared to a conventional sputtering system, the HiTUS technique allows finer control of the thin film microstructure. Using a conventional reactive rf magnetron sputtering technique, monoclinic nanocrystalline HfOx thin films have been deposited at a rate of ∼1.6nmmin-1 at room temperature, with a resistivity of 1013Ωcm, a breakdown strength of 3.5MVcm-1 and a dielectric constant of ∼18.2. By comparison, using the HiTUS process, amorphous HfOx (x=2.1) thin films which appear to have a cubic-like short-range order have been deposited at a high deposition rate of ∼25nmmin-1 with a high resistivity of 1014Ωcm, a breakdown strength of 3MVcm-1 and a high dielectric constant of ∼30. Two key conditions must be satisfied in the HiTUS system for high-k HfOx to be produced. Firstly, the correct oxygen flow rate is required for a given sputtering rate from the metallic target. Secondly, there must be an absence of energetic oxygen ion bombardment to maintain an amorphous microstructure and a high flux of medium energy species emitted from the metallic sputtering target to induce a cubic-like short range order. This HfOx is very attractive as a dielectric material for large-area electronic applications on flexible substrates. A remote plasma sputtering process (high target utilization sputtering, HiTUS) has been used to deposit amorphous hafnium oxide with a very high dielectric constant (∼30). X-ray diffraction shows that this material has a microstructure in which the atoms have a cubic-like short-range order, whereas radio frequency (rf) magnetron sputtering produced a monoclinic polycrystalline microstructure. This is correlated to the difference in the energetics of remote plasma and rf magnetron sputtering processes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Structuring technological information for technology roadmapping: Data mining approach

Most research on technology roadmapping has focused on its practical applications and the development of methods to enhance its operational process. Thus, despite a demand for well-supported, systematic information, little attention has been paid to how/which information can be utilised in technology roadmapping. Therefore, this paper aims at proposing a methodology to structure technological information in order to facilitate the process. To this end, eight methods are suggested to provide useful information for technology roadmapping: summary, information extraction, clustering, mapping, navigation, linking, indicators and comparison. This research identifies the characteristics of significant data that can potentially be used in roadmapping, and presents an approach to extracting important information from such raw data through various data mining techniques including text mining, multi-dimensional scaling and K-means clustering. In addition, this paper explains how this approach can be applied in each step of roadmapping. The proposed approach is applied to develop a roadmap of radio-frequency identification (RFID) technology to illustrate the process practically. © 2013 © 2013 Taylor & Francis.

Experimental demonstration of a transparent graphene millimetre wave absorber with 28% fractional bandwidth at 140 GHz.

The development of transparent radio-frequency electronics has been limited, until recently, by the lack of suitable materials. Naturally thin and transparent graphene may lead to disruptive innovations in such applications. Here, we realize optically transparent broadband absorbers operating in the millimetre wave regime achieved by stacking graphene bearing quartz substrates on a ground plate. Broadband absorption is a result of mutually coupled Fabry-Perot resonators represented by each graphene-quartz substrate. An analytical model has been developed to predict the absorption performance and the angular dependence of the absorber. Using a repeated transfer-and-etch process, multilayer graphene was processed to control its surface resistivity. Millimetre wave reflectometer measurements of the stacked graphene-quartz absorbers demonstrated excellent broadband absorption of 90% with a 28% fractional bandwidth from 125-165 GHz. Our data suggests that the absorbers' operation can also be extended to microwave and low-terahertz bands with negligible loss in performance.

Can frequency diversity provide performance gains for WSNs at 2.4GHz for the fire hydrant to above ground channel

Wireless Sensor Networks (WSNs) which utilise IEEE 802.15.4 technology offer the potential for low cost deployment and maintenance compared with conventional wired sensor networks, enabling effective and efficient condition monitoring of aged civil engineering infrastructure. We will address wireless propagation for a below to above ground scenario where one of the wireless nodes is located in a below ground fire hydrant chamber to permit monitoring of the local water distribution network. Frequency Diversity (FD) is one method that can be used to combat the damaging effects of multipath fading and so improve the reliability of radio links. However, no quantitative investigation concerning the potential performance gains from the use of FD at 2.4GHz is available for the outlined scenario. In this paper, we try to answer this question by performing accurate propagation measurements using modified and calibrated off-the-shelf 802.15.4 based sensor nodes. These measurement results are also compared with those obtained from simulations that employ our Modified 2D Finite-Difference Time-Domain (FDTD) approach. ©2009 IEEE.

Frequency diversity measurements at 2.4 GHz for wireless sensor networks deployed in tunnels

Wireless Sensor Networks (WSNs) which utilise IEEE 802.15.4 technology operate primarily in the 2.4 GHz globally compatible ISM band. However, the wireless propagation channel in this crowded band is notoriously variable and unpredictable, and it has a significant impact on the coverage range and quality of the radio links between the wireless nodes. Therefore, the use of Frequency Diversity (FD) has potential to ameliorate this situation. In this paper, the possible benefits of using FD in a tunnel environment have been quantified by performing accurate propagation measurements using modified and calibrated off-the-shelf 802.15.4 based sensor motes in the disused Aldwych underground railway tunnel. The objective of this investigation is to characterise the performance of FD in this confined environment. Cross correlation coefficients are calculated from samples of the received power on a number of frequency channels gathered during the field measurements. The low measured values of the cross correlation coefficients indicate that applying FD at 2.4 GHz will improve link performance in a WSN deployed in a tunnel. This finding closely matches results obtained by running a computational simulation of the tunnel radio propagation using a 2D Finite-Difference Time-Domain (FDTD) method. ©2009 IEEE.

GHz modulation of carbon nanotube cathodes for microwave amplifiers

Cold cathodes based on carbon nanotubes (CNs) allow to produce a pulsed/directly modulated electron beam. Using an array of vertically aligned CNs that exhibit an aspect ratio of around 200, we demonstrated the modulation of a 1.5 A/cm2 beam at 1.5 GHz frequency. Such CN cathodes are very promising for their use in a new generation of compact and low cost microwave amplifiers that operates between 30 and 100 GHz. ©2005 IEEE.

Monolithic electro-optically modulated VCSEL suitable for radio over fibre applications to 20 GHz

An integrated EOM VCSELs is shown to offer high linearity (92dB/Hz 2/3 at 6GHz) and by extrapolation ∼90dB/Hz2/3 up to 20GHz. Successful modulation with IEEE 802.11g signals is demonstrated at 6GHz with a 12dB dynamic range. © 2011 Optical Society of America.

Very high modulation efficiency two-sections tapered laser diode at 1060nm for free space optical communications

High-power (more than 500 mW) and high-speed (more than 1 Gbps) tapered lasers at 1060 nm are required in free-space optical communications and (at lower frequencies of around 100 MHz) display applications for frequency doubling to the green. On a 3 mm long tapered laser, we have obtained an open eye diagram at 1 Gbps, together with a high extinction ratio of 11 dB, an optical modulation amplitude of 530 mW, and a high modulation efficiency of 13 W/A. On a 4 mm-long tapered laser, we have obtained an open eye diagram at 700 Mbps, together with a high extinction ratio of 19 dB, a high optical modulation amplitude of 1.6 W, and a very high modulation efficiency of 19 W/A. On a 6 mm-long tapered laser, we have obtained a very high power of 5W CW and a very high static modulation efficiency of 59.8 W/A. © 2011 SPIE.

Carbon nanotube based photocathodes for high frequency amplifiers

The combination of high frequency, high power, high efficiency capabilities is a feature of vacuum tube technology. For most of applications, large bandwidths are required, and therefore the modulation method should also allow large bandwidth operation. Optically modulated cold cathodes, avoiding the use of resonant cavities, should satisfy this requirement. This is the reason why we have developed carbon nanotube based photocathode.© 2009 IEEE.