Estimating and Enhancing the Yield of Tuneling SRAM Cells by Simulation

As a novel implementation of the static random access memory (SRAM), the tunneling SRAM (TSRAM) uses the negative differential resistance of tunnel diodes (TD’s) and potentially offers considerable improvements in both standby power dissipation and integration density compared to the conventional CMOS SRAM. TSRAM has not yet been realized with a useful bit capacity mainly because the level of uniformity required of the nanoscale TD’s has been demanding and difficult to achieve. In this letter, we propose a Monte Carlo approach for estimating the yield of TSRAM cells and show that by optimizing the cell’s external circuit parameters, we can relax the allowable tolerance of a key device parameter of a resonant-TD-(RTD) based cell by three times.

Evaluation of termination techniques for 4H-SiC PiN diodes and trench JFETs

An investigation concerning suitable termination techniques for 4H-SiC trench JFETs is presented. Field plates, p+ floating rings and junction termination extension techniques are used to terminate 1.2kV class PiN diodes. The fabricated PiN diodes evaluated here have a similar design to trench JFETs. Therefore, the conclusions for PiN diodes can be applied to JFET structures as well. Numerical simulations are also used to illustrate the effect of the terminations on the diodes' blocking mode behaviour.

Resonant Raman characterisation of ultra-thin nano-protective carbon layers for magnetic storage devices

Carbon thin films are very important as protective coatings for a wide range of applications such as magnetic storage devices. The key parameter of interest is the sp3 fraction, since it controls the mechanical properties of the film. Visible Raman spectroscopy is a very popular technique to determine the carbon bonding. However, the visible Raman spectra mainly depend on the configuration and clustering of the sp2 sites. This can result in the Raman spectra of different samples looking similar albeit having a different structure. Thus, visible Raman alone cannot be used to derive the sp3 content. Here we monitor the carbon bonding by using a combined study of Raman spectra taken at two wavelengths (514 and 244 nm). We show how the G peak dispersion is a very useful parameter to investigate the carbon samples and we endorse it as a production-line characterisation tool. The dispersion is proportional to the degree of disorder, thus making it possible to distinguish between graphitic and diamond-like carbon. © 2003 Elsevier B.V. All rights reserved.

Properties of a-C:H films deposited from a methane electron cyclotron wave resonant plasma

An electron cyclotron wave resonant methane plasma discharge was used for the high rate deposition of hydrogenated amorphous carbon (a-C:H). Deposition rates of up to ∼400 Å/min were obtained over substrates up to 2.5 in. in diameter with a film thickness uniformity of ∼±10%. The deposited films were characterised in terms of their mass density, sp3 and hydrogen contents, C-H bonding, intrinsic stress, scratch resistance and friction properties. The deposited films possessed an average sp3 content, mass density and refractive index of ∼58%, 1.76 g/cm3 and 2.035 respectively.Mechanical characterisation indicated that the films possessed very low steady-state coefficients of friction (ca. 0.06) and a moderate shear strength of ∼141 MPa. Nano-indentation measurements also indicated a hardness and elastic modulus of ∼16.1 and 160 GPa respectively. The critical loads required to induce coating failure were also observed to increase with ion energy as a consequence of the increase in degree of ion mixing at the interface. Furthermore, coating failure under scratch test conditions was observed to take place via fracture within the silicon substrate itself, rather than either in the coating or at the film/substrate interface. © 2003 Elsevier B.V. All rights reserved.

Methane chemistry involved in a low-pressure electron cyclotron wave resonant plasma discharg

A low-pressure methane plasma generated by electron cyclotron wave resonance was characterized in terms of electron temperature, plasma density and composition. Methane plasmas were commonly used in the deposition of hydrogenated amorphous carbon thin films. Little variation in the plasma chemistry was observed by mass spectrometry measurements of the gas phase with increasing electron temperature. The results show that direct electron-impact reactions exert greater influence on the plasma chemistry than secondary ion-neutral reactions.

A resonant micromachined electrostatic charge sensor

A micromachined electrometer, based on the concept of a variable capacitor, has been designed, modeled, fabricated, and tested. The device presented in this paper functions as a modulated variable capacitor, wherein a dc charge to be measured is up-modulated and converted to an ac voltage output, thus improving the signal-to-noise ratio. The device was fabricated in a commercial standard SOI micromachining process without the need for any additional processing steps. The electrometer was tested in both air and vacuum at room temperature. In air, it has a charge-to-voltage conversion gain of 2.06 nV/e, and a measured charge noise floor of 52.4 e/rtHz. To reduce the effects of input leakage current, an electrically isolated capacitor has been introduced between the variable capacitor and input to sensor electronics. Methods to improve the sensitivity and resolution are suggested while the long-term stability of these sensors is modeled and discussed. © 2006 IEEE.