Collapse mechanism maps for the hollow pyramidal core of a sandwich panel under transverse shear

The finite element method has been used to develop collapse mechanism maps for the shear response of sandwich panels with a stainless steel core comprising hollow struts. The core topology comprises either vertical tubes or inclined tubes in a pyramidal arrangement. The dependence of the elastic and plastic buckling modes upon core geometry is determined, and optimal geometric designs are obtained as a function of core density. For the hollow pyramidal core, strength depends primarily upon the relative density ρ̄ of the core with a weak dependence upon tube slenderness. At ρ̄ below about 3%, the tubes of the pyramidal core buckle plastically and the peak shear strength scales linearly with ρ̄. In contrast, at ρ̄ above 3%, the tubes do not buckle and a stable shear response is observed. The predictions of the current study are in excellent agreement with previous measurements on the shear strength of the hollow pyramidal core, and suggest that this core topology is attractive from the perspectives of both core strength and energy absorption. © 2011 Elsevier Ltd. All rights reserved.

Flat Panel Displays

Learn how nanotechnologies will be used to transform future wireless and Internet communications.

Dual gate photo-thin film transistor with high photoconductive gain for high reliability, and low noise flat panel transparent imager

In this presentation, we report excellent electrical and optical characteristics of a dual gate photo thin film transistor (TFT) with bi-layer oxide channel, which was designed to provide virgin threshold voltage (V T) control, improve the negative bias illumination temperature stress (NBITS) reliability, and offer high photoconductive gain. In order to address the photo-sensitivity of phototransistor for the incoming light, top transparent InZnO (IZO) gate was employed, which enables the independent gate control of dual gate photo-TFT without having any degradation of its photosensitivity. Considering optimum initial V T and NBITS reliability for the device operation, the top gate bias was judiciously chosen. In addition, the speed and noise performance of the photo-TFT is competitive with silicon photo-transistors, and more importantly, its superiority lies in optical transparency. © 2011 IEEE.