Microwave signal transmission over a directly-modulated radio-over-fiber link using cascaded semiconductor optical amplifiers

We demonstrate a record 150km transmission of microwave signals by a directly-modulated radio-over-fiber link with a bit-error-rate of less than 10-12. Cascaded semiconductor optical amplifiers are employed in this link to extend the transmission link length. © 2005 Optical Society of America.

A novel scalable photonic analog switch architecture based on semiconductor optical amplifiers

We propose a novel semiconductor optical amplifier (SOA) based switch architecture for analog applications. Proof-of-principle experiments show that the system is very linear with an SFDR of approximately 100dB·Hz 2/3 for a switching time of 50μs. The port number of this switch is scalable and can be expanded to 80 × 80.

Numerical modelling of dynamic response of loss modulated monolithic multisection mode-locked semiconductor lasers

Monolithic multisection mode-locked semiconductor lasers with an integrated distributed Bragg reflector (DBR) have recently been demonstrated to generate stable picosecond pulses at high repetition rates suitable for optical communication systems. However, there has been very little theoretical work on understanding the physical mechanisms of the device and on optimisation of the absorber modulator design. This article presents numerical modeling of the loss modulated mode-locking process in these lasers. The model predicts most aspects experimentally observed within this type of device, and the results show the output waveform, optical spectrum, instantaneous frequency chirp, and stable operating range.

The bacterial cytoskeleton modulates motility, type 3 secretion, and colonization in Salmonella.

Although there have been great advances in our understanding of the bacterial cytoskeleton, major gaps remain in our knowledge of its importance to virulence. In this study we have explored the contribution of the bacterial cytoskeleton to the ability of Salmonella to express and assemble virulence factors and cause disease. The bacterial actin-like protein MreB polymerises into helical filaments and interacts with other cytoskeletal elements including MreC to control cell-shape. As mreB appears to be an essential gene, we have constructed a viable ΔmreC depletion mutant in Salmonella. Using a broad range of independent biochemical, fluorescence and phenotypic screens we provide evidence that the Salmonella pathogenicity island-1 type three secretion system (SPI1-T3SS) and flagella systems are down-regulated in the absence of MreC. In contrast the SPI-2 T3SS appears to remain functional. The phenotypes have been further validated using a chemical genetic approach to disrupt the functionality of MreB. Although the fitness of ΔmreC is reduced in vivo, we observed that this defect does not completely abrogate the ability of Salmonella to cause disease systemically. By forcing on expression of flagella and SPI-1 T3SS in trans with the master regulators FlhDC and HilA, it is clear that the cytoskeleton is dispensable for the assembly of these structures but essential for their expression. As two-component systems are involved in sensing and adapting to environmental and cell surface signals, we have constructed and screened a panel of such mutants and identified the sensor kinase RcsC as a key phenotypic regulator in ΔmreC. Further genetic analysis revealed the importance of the Rcs two-component system in modulating the expression of these virulence factors. Collectively, these results suggest that expression of virulence genes might be directly coordinated with cytoskeletal integrity, and this regulation is mediated by the two-component system sensor kinase RcsC.

200-V lateral superjunction LIGBT on partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.