Systems aspects of optical technologies for use in datacommunications

This paper reviews the development of system techniques using advanced modulation formats that have arisen in recent years for use in datacommunications. Simulations are provided to allow comparison of the emerging schemes. © 2011 Optical Society of America.

40 Gbit/s optical communication system

The University of Bristol is studying the feasibility of deploying 40 Gbit/s optical time division multiplexed (OTDM) transmission networks to support new telecommunication services such the Internet and video-on-demand systems. Among the functional blocks being considered in the project are the optical pulse sources, signal multiplexers and demultiplexers, clock recovery subsystems, signal detection and dispersion accommodation methods.

7dB optical power budget improvements of 11.25Gb/s optical OFDM PON systems using optical filters

Wavelength offset super Gaussian optical filters enable 7dB increases in optical power budget of 11.25Gb/s optical OFDM PON systems using directly modulated DFBs, considerably relax filter bandwidth requirement and improve performance robustness to bandwidth variation. © 2011 Optical Society of America.

7dB optical power budget improvements of optical OFDM PON systems using narrow optical filters

The use of 0.02nm bandwidth optical bandpass filters with 0.01nm wavelength offsets from optical carrier wavelengths in the optical OFDM (OOFDM) transmitter improves optical power budgets by 7dB at a total channel BER of 1×10 -3 in directly modulated laser-based IMDD PON systems. ©2010 Optical Society of America.

Theoretical investigation of CoSi2/Si1-xGex detectors: Influence of a Si tunneling barrier on the electro-optical characteristics

We present a theoretical investigation of the influence of a non-reacted Si layer on the transport and optical properties of CoSi2/Si1-xGex Schottky barrier diodes grown from Co/Si/Si1-xGex systems. The presence of this layer reduces the effect of the lowering of the Schottky barrier height which would be expected in a CoSi2/Si1-xGex. However, due to the small thickness of this Si layer, the charge carriers are able to tunnel through it. This tunneling process allows for a significant lowering of the Schottky barrier height and therefore an extension of the detection regime into the infrared. © 1996 American Institute of Physics.