Direct observation of the structural component of the metal-insulator phase transition and growth habits of epitaxially grown VO2 nanowires.

We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy.

Observation of large-scale features on graphite by scanning tunnelling microscopy

Superlattice structures and rippling fringes were imaged on two separate pieces of graphite (HOPG) by scanning tunnelling microscopy (STM). We observed the corrugation conservation phenomenon on one of the superlattice structures where an overlayer does not attenuate the corrugation amplitude of the superlattice. Such a phenomenon may illustrate an implication that nanoscale defects a few layers underneath the surface may propagate through many layers without decay and form the superlattice structure on the topmost surface. Some rippling fringes with periodicities of 20 nm and 30 nm and corrugations of 0.1 nm and 0.15nm were observed in the superlattice area and in nearby regions. Such fringes are believed to be due to physical buckling of the surface. The stress required to generate such structures is estimated, and a possible cause is discussed. An equation relating the attenuation factor to the number of overlayers is proposed. © 2005 The Japan Society of Applied Physics.