Low loss HF band SOI wine glass bulk mode capacitive square-plate resonator

This paper reports on the design and electrical characterization of a single crystal silicon micromechanical square-plate resonator. The microresonator has been excited in the anti-symmetrical wine glass mode at a resonant frequency of 5.166 MHz and exhibits an impressive quality factor (Q) of 3.7 × 106 at a pressure of 33 mtorr. The device has been fabricated in a commercial foundry process. An associated motional resistance of approximately 50 kΩ using a dc bias voltage of 60 V is measured for a transduction gap of 2 νm due to the ultra-high Q of the resonator. This result corresponds to a frequency-Q product of 1.9 × 1013, the highest reported for a fundamental mode single-crystal silicon resonator and on par with some of the best quartz crystal resonators. The results are indicative of the superior performance of silicon as a mechanical material, and show that the wine glass resonant mode is beneficial for achieving high quality factors allowed by the material limit. © 2009 IOP Publishing Ltd.

Square wine glass mode resonator with quality factor of 4 million

We report on the experimental characterization of a single crystal silicon square-plate microresonator. The resonator is excited in the square wine glass (SWG) mode at a mechanical resonance frequency of 2.065 MHz. The resonator displays quality factor of 9660 in air and an ultra-high quality factor of Q = 4.05 × 106 in 12 mtorr vacuum. The SWG mode may be described as a square plate that contracts along one axis in the fabrication plane, while simultaneously extending along an orthogonal axis in the same plane. The resonant structure is addressed in a 2-terminal configuration by utilizing equal and opposite drive polarities on surrounding capacitor electrodes, thereby decreasing the motional resistance of the resonator. The resonant micromechanical device has been fabricated in a commercial silicon-on-insulator process through the MEMSCAP foundry utilising a minimum electrostatic gap of 2 μm. © 2008 IEEE.

Anchor limited q in flexural mode resonators

This paper reports a preliminary examination of the effect of anchor geometry design on the quality factor of flexural mode resonators operating in vacuum using both FE simulation and measurements of resonator frequency response. Three types of structures have been considered in this study: an elliptical mode ring, a double ended tuning fork, and a doubly-clamped beam. We consider the relative distribution of strain energies in both the resonant structure and the connecting stem, which is indicative of the measured quality factor. The measured quality factors of the different structures are compared against each other, based on which suggestions are proposed for optimizing the anchor limited quality factor (Q) in flexural mode micromechanical resonators. ©2008 IEEE.

Normal shock boundary layer control with various vortex generator geometries

Various vortex generators which include ramp, split-ramp and a new hybrid concept "ramped-vane" are investigated under normal shock conditions with a diffuser at Mach number of 1.3. The dimensions of the computational domain were designed using Reynolds Average Navier-Stokes studies to be representative of the flow in an external-compression supersonic inlet. Using this flow geometry, various vortex generator concepts were studied with Implicit Large Eddy Simulation. In general, the ramped-vane provided increased vorticity compared to the other devices and reduced the separation length downstream of the device centerline. In addition, the size, edge gap and streamwise position respect to the shock were studied for the ramped-vane and it was found that a height of about half the boundary thickness and a large trailing edge gap yielded a fully attached flow downstream of the device. This ramped-vane also provided the largest reduction in the turbulent kinetic energy and pressure fluctuations. Additional benefits include negligible drag while the reductions in boundary layer displacement thickness and shape factor were seen compared to other devices. © 2010 by Sang Lee.

Study of lateral mode SOI-MEMS resonators for reduced anchor loss

MEMS resonators fabricated in silicon-on-insulator (SOI) technology must be clamped to the substrate via anchoring stems connected either from within the resonator or through the sides, with the side-clamped solution often employed due to manufacturing constraints. This paper examines the effect of two types of commonly used side-clamped, anchoring-stem geometries on the quality factor of three different laterally-driven resonator topologies. This study employs an analytical framework which considers the relative distribution of strain energies between the resonating body and clamping stems. The ratios of the strain energies are computed using ANSYS FEA and used to provide an indicator of the expected anchor-limited quality factors. Three MEMS resonator topologies have been fabricated and characterized in moderate vacuum. The associated measured quality factors are compared against the computed strain energy ratios, and the trends are shown to agree well with the experimental data. © 2011 IOP Publishing Ltd.

169 GHz repetition rate passively harmonically mode-locked VECSEL emitting 265 fs pulses

High repetition rate passively mode-locked sources are of significant interest due to their potential for applications including optical clocking, optical sampling, communications and others. Due to their short excited state lifetimes mode-locked VECSELs are ideally suited to high repetition rate operation, however fundamentally mode-locked quantum well-based VECSELs have not achieved repetition rates above 10 GHz due to the limitations placed on the cavity geometry by the requirement that the saturable absorber saturates more quickly than the gain. This issue has been overcome by the use of quantum dot-based saturable absorbers with lower saturation fluences leading to repetition rates up to 50 GHz, but sub-picosecond pulses have not been achieved at these repetition rates. We present a passively harmonically mode-locked VECSEL emitting pulses of 265 fs duration at a repetition rate of 169 GHz with an output power of 20 mW. The laser is based around an antiresonant 6 quantum well gain sample and is mode-locked using a semiconductor saturable absorber mirror. Harmonic modelocking is achieved by using an intracavity sapphire etalon. The sapphire then acts as a coupled cavity, setting the repetition rate of the laser while still allowing a tight focus on the saturable absorber. RF spectra of the laser output show no peaks at harmonics of the fundamental repetition rate up to 26 GHz, indicating stable harmonic modelocking. Autocorrelations reveal groups of pulses circulating in the cavity as a result of an increased tendency towards Q-switched modelocking due to the low pulse energies.

Normal shock boundary layer control with various vortex generator geometries

Various vortex generators which include ramp, split-ramp and a new hybrid concept "ramped-vane" are investigated under normal shock conditions with a diffuser at Mach number of 1.3. The dimensions of the computational domain were designed using Reynolds Average Navier-Stokes studies to be representative of the flow in an external-compression supersonic inlet. Using this flow geometry, various vortex generator concepts were studied with Implicit Large Eddy Simulation. In general, the ramped-vane provided increased vorticity compared to the other devices and reduced the separation length downstream of the device centerline. In addition, the size, edge gap and streamwise position respect to the shock were studied for the ramped-vane and it was found that a height of about half the boundary thickness and a large trailing edge gap yielded a fully attached flow downstream of the device. This ramped-vane also provided the largest reduction in the turbulent kinetic energy and pressure fluctuations. Additional benefits include negligible drag while the reductions in boundary layer displacement thickness and shape factor were seen compared to other devices. © 2011 Elsevier Ltd.