Micromachining of glassy carbon toolsets for micro embossing applications

Laser micro machining is fast gaining popularity as a method of fabricating micro scale structures. Lasers have been utilised for micro structuring of metals, ceramics and glass composites and with advances in material science, new materials are being developed for micro/nano products used in medical, optical, and chemical industries. Due to its favourable strength to weight ratio and extreme resistance to chemical attack, glassy carbon is a new material that offers many unique properties for micro devices. The laser machining of SIGRADUR® G grade glassy carbon was characterised using a 1065 nm wavelength Ytterbium doped pulsed fiber laser. The laser system has a selection of 25 preset waveforms with optimised peak powers for different pulsing frequencies. The optics provide spot diameter of 40 μm at the focus. The effect of fluence, transverse overlap and pulsing frequency (as waveform) on glassy carbon was investigated. Depth of removal and surface roughness were measured as machining quality indicators. The damage threshold fluence was determined to be 0.29 J/cm2 using a pulsing frequency of 250 kHz and a pulse width of 18 ns (waveform 3). Ablation rates of 17 < V < 300 μm3/pulse were observed within a fluence range of 0.98 < F < 2.98 J/cm2. For the same fluence variation, 0.6 μm to 6.8 μm deep trenches were machined. Trench widths varied from 29 μm at lower fluence to 47 μm at the higher fluence. Square pockets, 1 mm wide, were machined to understand the surface machining or milling. The depth of removal using both waveform 3 and 5 showed positive correlation with fluence, with waveform 5 causing more removal than waveform 3 for the same fluence. Machined depths varied from less than 1 μm to nearly 40 μm. For transverse overlap variation using waveform 3, the best surface finish with Rz = 1.1 μm was obtained for fluence 0.792 J/cm2 for transverse overlap of 1 μm, 6 μm, and 9 μm at machined depths of 22.9 μm, 6.6 μm, and 4.6 μm respectively. For fluence of 1.426 J/cm2, the best surface finish with Rz = 1.2 μm was obtained for transverse overlap of 6 μm, and 9 μm at machined depths of 12.46 μm, and 8.6 μm respectively. The experimental data was compiled as machining charts and utilised for fabricating a micro-embossing glassy carbon master toolsets as a capability demonstration.

Towards a fast electro-thermo-mechanical IGBT/Diode simulation framework for design of reliable power electronic converters

This paper describes a methodology that enables fast and reasonably accurate prediction of the reliability of power electronic modules featuring IGBTs and p-i-n diodes, by taking into account thermo-mechanical failure mechanisms of the devices and their associated packaging. In brief, the proposed simulation framework performs two main tasks which are tightly linked together: (i) the generation of the power devices' transient thermal response for realistic long load cycles and (ii) the prediction of the power modules' lifetime based on the obtained temperature profiles. In doing so the first task employs compact, physics-based device models, power losses lookup tables and polynomials and combined material-failure and thermal modelling, while the second task uses advanced reliability tests for failure mode and time-to-failure estimation. The proposed technique is intended to be utilised as a design/optimisation tool for reliable power electronic converters, since it allows easy and fast investigation of the effects that changes in circuit topology or devices' characteristics and packaging have on the reliability of the employed power electronic modules. © 2012 IEEE.

Design and simulations of SOI CMOS micro-hotplate gas sensors

This paper describes a new generation of integrated solid-state gas-sensors embedded in SOI micro-hotplates. The micro-hotplates lie on a SOI membrane and consist of MOSFET heaters that elevate the operating temperature, through self-heating, of a gas sensitive material. These sensors are fully compatible with SOI CMOS or BiCMOS technologies, offer ultra-low power consumption (under 100 mW), high sensitivity, low noise, low unit cost, reproducibility and reliability through the use of on-chip integration. In addition, the new integrated sensors offer a nearly uniform temperature distribution over the active area at its operating temperatures at up to about 300-350°C. This makes SOI-based gas-sensing devices particularly attractive for use in handheld battery-operated gas monitors. This paper reports on the design of a chemo-resistive gas sensor and proposes for the first time an intelligent SOI membrane microcalorimeter using active micro-FET heaters and temperature sensors. A comprehensive set of numerical and analogue simulations is also presented including complex 2D and 3D electro-thermal numerical analyses. © 2001 Elsevier Science B.V. All rights reserved.

Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology

This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.