Influence of voltage and frequency dimming on power losses in hf electronic ballasts for compact fluorescent lamps

Compact fluorescent lamps (CFLs) incorporating electronic ballasts are widely used in lighting. In many cases, the ability to dim the lamp is a requirement. Dimming can be achieved by varying the switching frequency of the inverter or by changing the voltage supplied to the inverter. The effect of dimming by both approaches on the power losses in the inverter is studied in this work. The lamp and associated inverter has been modeled in Pspice, using a behavioral model for the CFL. Predicted losses are in good agreement with experimental data obtained from calorimetry. After verification, the model was then used to determine the distribution of losses within the inverter, enabling a comparison of the effects of the two dimming methods to be made. © 2011 IEEE.

Density of photon states in dye-doped chiral nematic liquid crystal cells in the presence of losses and gain

We calculate the density of photon states (DOS) of the normal modes in dye-doped chiral nematic liquid crystal (LC) cells in the presence of various loss mechanisms. Losses and gain are incorporated into the transmission characteristics through the introduction of a small imaginary part in the dielectric constant perpendicular and along the director, for which we assume no frequency dispersion. Theoretical results are presented on the DOS in the region of the photonic band gap for a range of values of the loss coefficient and different values of the optical anisotropy. The obtained values of the DOS at the photonic band gap edges predict a reversal of the dominant modes in the structure. Our results are found to be in good agreement with the experimentally obtained excitation thresholds in chiral nematic LC lasers. The behavior of the DOS is also discussed for amplifying LC cells providing additional insight to the lasing mechanism of these structures. © 2012 American Physical Society.

Theoretical and experimental studies on Jc and AC losses of 2G HTS coils

This paper begins with introducing the winding techniques of two superconducting double-pancake coils wound using 2G coated conductors. These winding techniques are able to guarantee a good performance for the superconducting coils. Then the coil critical currents were measured and compared with a simulation model. The results were consistent. Finally the coil AC losses were measured using an experimental circuit including a compensation coil. The simulation results are close to the experiment results. © 2010 IEEE.

Point injection in trench insulated gate bipolar transistor for ultra low losses

In this paper we propose novel designs that enhance the plasma concentration across the Field Stop IGBT. The "p-ring" and the "point-injection" type devices exhibit increased cathode side conductivity modulation which results in impressive IGBT performance improvement. These designs are shown to be extremely effective in lowering the on-state losses without compromising the switching performance or the breakdown rating. For the same switching losses we can achieve more than 20% reduction of the on state energy losses compared to the conventional FS IGBT. © 2012 IEEE.

Density of photon states in dye-doped chiral nematic liquid crystal cells in the presence of losses and gain.

We calculate the density of photon states (DOS) of the normal modes in dye-doped chiral nematic liquid crystal (LC) cells in the presence of various loss mechanisms. Losses and gain are incorporated into the transmission characteristics through the introduction of a small imaginary part in the dielectric constant perpendicular and along the director, for which we assume no frequency dispersion. Theoretical results are presented on the DOS in the region of the photonic band gap for a range of values of the loss coefficient and different values of the optical anisotropy. The obtained values of the DOS at the photonic band gap edges predict a reversal of the dominant modes in the structure. Our results are found to be in good agreement with the experimentally obtained excitation thresholds in chiral nematic LC lasers. The behavior of the DOS is also discussed for amplifying LC cells providing additional insight to the lasing mechanism of these structures.

Blocking central opiate function modulates hedonic impact and anterior cingulate response to rewards and losses.

Reward processing is linked to specific neuromodulatory systems with a dopaminergic contribution to reward learning and motivational drive being well established. Neuromodulatory influences on hedonic responses to actual receipt of reward, or punishment, referred to as experienced utility are less well characterized, although a link to the endogenous opioid system is suggested. Here, in a combined functional magnetic resonance imaging-psychopharmacological investigation, we used naloxone to block central opioid function while subjects performed a gambling task associated with rewards and losses of different magnitudes, in which the mean expected value was always zero. A graded influence of naloxone on reward outcome was evident in an attenuation of pleasure ratings for larger reward outcomes, an effect mirrored in attenuation of brain activity to increasing reward magnitude in rostral anterior cingulate cortex. A more striking effect was seen for losses such that under naloxone all levels of negative outcome were rated as more unpleasant. This hedonic effect was associated with enhanced activity in anterior insula and caudal anterior cingulate cortex, areas implicated in aversive processing. Our data indicate that a central opioid system contributes to both reward and loss processing in humans and directly modulates the hedonic experience of outcomes.

Differential encoding of losses and gains in the human striatum.

Studies on human monetary prediction and decision making emphasize the role of the striatum in encoding prediction errors for financial reward. However, less is known about how the brain encodes financial loss. Using Pavlovian conditioning of visual cues to outcomes that simultaneously incorporate the chance of financial reward and loss, we show that striatal activation reflects positively signed prediction errors for both. Furthermore, we show functional segregation within the striatum, with more anterior regions showing relative selectivity for rewards and more posterior regions for losses. These findings mirror the anteroposterior valence-specific gradient reported in rodents and endorse the role of the striatum in aversive motivational learning about financial losses, illustrating functional and anatomical consistencies with primary aversive outcomes such as pain.

A framework for the analysis of thermal losses in reciprocating compressors and expanders

This article presents a framework that describes formally the underlying unsteady and conjugate heat transfer processes that are undergone in thermodynamic systems, along with results from its application to the characterization of thermodynamic losses due to irreversible heat transfer during reciprocating compression and expansion processes in a gas spring. Specifically, a heat transfer model is proposed that solves the one-dimensional unsteady heat conduction equation in the solid simultaneously with the first law in the gas phase, with an imposed heat transfer coefficient taken from suitable experiments in gas springs. Even at low volumetric compression ratios (of 2.5), notable effects of unsteady heat transfer to the solid walls are revealed, with thermally induced thermodynamic cycle (work) losses of up to 14% (relative to the work input/output in equivalent adiabatic and reversible compression/expansion processes) at intermediate Péclet numbers (i.e., normalized frequencies) when unfavorable solid and gas materials are selected, and closer to 10-12% for more common material choices. The contribution of the solid toward these values, through the conjugate variations attributed to the thickness of the cylinder wall, is about 8% and 2% points, respectively, showing a maximum at intermediate thicknesses. At higher compression ratios (of 6) a 19% worst-case loss is reported for common materials. These results suggest strongly that in designing high-efficiency reciprocating machines the full conjugate and unsteady problem must be considered and that the role of the solid in determining performance cannot, in general, be neglected. © 2014 Richard Mathie, Christos N. Markides, and Alexander J. White. Published with License by Taylor & Francis.

Broad spectrum measurement of the birefringence of an isothiocyanate based liquid crystal.

Tunable materials with high anisotropy of refractive index and low loss are of particular interest in the microwave and terahertz range. Nematic liquid crystals are highly sensitive to electric and magnetic fields and may be designed to have particularly high birefringence. In this paper we investigate birefringence and absorption losses in an isothiocyanate based liquid crystal (designed for high anisotropy) in a broad range of the electromagnetic spectrum, namely 0.1-4 GHz, 30 GHz, 0.5-1.8 THz, and in the visible and near-infrared region (400 nm-1600 nm). We report high birefringence (Δn = 0.19-0.395) and low loss in this material. This is attractive for tunable microwave and terahertz device applications.

Switching performance of epitaxially grown normally-off 4H-SiC JFET

Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6-10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5-1.8kV was realized at VGS = -5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong influence of channel doping conditions on the turn-on switching performance. The fast switching normally-off JFET devices require heavily doped narrow JFET channel design. © (2009) Trans Tech Publications, Switzerland.