Computation of high-stability DC balancing scheme for ferroelectric liquid crystal on silicon holograms using graphics processing units.

Spatial light modulators based around liquid crystal on silicon have found use in a variety of telecommunications applications, including the optimization of multimode fibers, free-space communications, and wavelength selective switching. Ferroelectric liquid crystals are attractive in these areas due to their fast switching times and high phase stability, but the necessity for the liquid crystal to spend equal time in each of its two possible states is an issue of practical concern. Using the highly parallel nature of a graphics processing unit architecture, it is possible to calculate DC balancing schemes of exceptional quality and stability.

Phase modulation with polymer-dispersed liquid crystals

We report on work on producing phase-only polymer-dispersed liquid crystals for use in spatial light modulators for adaptive optics. The aim is to assess the magnitude of the achievable phase shifts and the associated slew rate. We describe our methodology of producing devices and present our initial results.

Ferroelectric liquid crystal over silicon devices

Over the past 20 years, ferroelectric liquid crystal over silicon (FLCOS) devices have made a wide impact on applications as diverse as optical correlation and holographic projection. To cover the entire gamut of this technology would be difficult and long winded; hence, this paper describes the significant developments of FLCOS within the Engineering Department at the University of Cambridge.The purpose of this paper is to highlight the key issues in fabricating silicon backplane spatial light modulators (SLMs) and to indicate ways in which the technology can be fabricated using cheap, low-density production and manufacturability. Three main devices have been fabricated as part of several research programmes and are documented in this paper. The fast bitplane SLM and the reconfigurable optical switches for aerospace and telecommunications systems (ROSES) SLM will form the basis of a case study to outline the overall processes involved. There is a great deal of commonality in the fabrication processes for all three devices, which indicates their potential strength and demonstrates that these processes can be made independent of the SLMs that are being assembled. What is described is a generic process that can be applied to any silicon backplane SLM on a die-by-die basis. There are hundreds of factors that can affect the yield in a manufacturing process and the purpose of a good process design procedure is to minimise these factors. One of the most important features in designing a process is fabrication experience, as so many of the lessons in this business can only be learned this way. We are working with the advantage of knowing the mistakes already made in the flat panel display industry, but we are also faced with the fact that those mistakes took many years and many millions of dollars to make.The fabrication process developed here originates and adapts earlier processes from various groups around the world. There are also a few totally new processes that have now been adopted by others in the field. Many, such as the gluing process, are still on-going and have to be worked on more before they will fully suit 'manufacturability'. © 2012 Copyright Taylor and Francis Group, LLC.

Light-matter interaction in a microcavity-controlled graphene transistor

Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphene. Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectral selection of photocurrent generation in the integrated graphene device. A twenty-fold enhancement of photocurrent is demonstrated. The optical cavity also determines the spectral properties of the electrically excited thermal radiation of graphene. Most interestingly, we find that the cavity confinement modifies the electrical transport characteristics of the integrated graphene transistor. Our experimental approach opens up a route towards cavity-quantum electrodynamics on the nanometre scale with graphene as a current-carrying intra-cavity medium of atomic thickness. © 2012 Macmillan Publishers Limited. All rights reserved.

Correct biological timing in Arabidopsis requires multiple light-signaling pathways.

Circadian oscillators provide rhythmic temporal cues for a range of biological processes in plants and animals, enabling anticipation of the day/night cycle and enhancing fitness-associated traits. We have used engineering models to understand the control principles of a plant's response to seasonal variation. We show that the seasonal changes in the timing of circadian outputs require light regulation via feed-forward loops, combining rapid light-signaling pathways with entrained circadian oscillators. Linear time-invariant models of circadian rhythms were computed for 3,503 circadian-regulated genes and for the concentration of cytosolic-free calcium to quantify the magnitude and timing of regulation by circadian oscillators and light-signaling pathways. Bioinformatic and experimental analysis show that rapid light-induced regulation of circadian outputs is associated with seasonal rephasing of the output rhythm. We identify that external coincidence is required for rephasing of multiple output rhythms, and is therefore important in general phase control in addition to specific photoperiod-dependent processes such as flowering and hypocotyl elongation. Our findings uncover a fundamental design principle of circadian regulation, and identify the importance of rapid light-signaling pathways in temporal control.

Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

The optical efficiency of GaN-based multiple quantum well (MQW) and light emitting diode (LED) structures grown on Si(111) substrates by metal-organic vapor phase epitaxy was measured and compared with equivalent structures on sapphire. The crystalline quality of the LED structures was comprehensively characterized using x-ray diffraction, atomic force microscopy, and plan-view transmission electron microscopy. A room temperature photoluminescence (PL) internal quantum efficiency (IQE) as high as 58% has been achieved in an InGaN/GaN MQW on Si, emitting at 460 nm. This is the highest reported PL-IQE of a c-plane GaN-based MQW on Si, and the radiative efficiency of this sample compares well with similar structures grown on sapphire. Processed LED devices on Si also show good electroluminescence (EL) performance, including a forward bias voltage of ∼3.5 V at 20 mA and a light output power of 1 mW at 45 mA from a 500 ×500 μm2 planar device without the use of any additional techniques to enhance the output coupling. The extraction efficiency of the LED devices was calculated, and the EL-IQE was then estimated to have a maximum value of 33% at a current density of 4 A cm-2, dropping to 30% at a current density of 40 A cm-2 for a planar LED device on Si emitting at 455 nm. The EL-IQE was clearly observed to increase as the structural quality of the material increased for devices on both sapphire and Si substrates. © 2011 American Institute of Physics.

Field of view expansion for 3-D holographic display using a single spatial light modulator with scanning reconstruction light

Increasing the field of view of a holographic display while maintaining adequate image size is a difficult task. To address this problem, we designed a system that tessellates several sub-holograms into one large hologram at the output. The sub-holograms we generate is similar to a kinoform but without the paraxial approximation during computation. The sub-holograms are loaded onto a single spatial light modulator consecutively and relayed to the appropriate position at the output through a combination of optics and scanning reconstruction light. We will review the method of computer generated hologram and describe the working principles of our system. Results from our proof-of-concept system are shown to have an improved field of view and reconstructed image size. ©2009 IEEE.

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.