Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors

A systematic study has been made of the growth of both hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiN) by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). In the case of a-SiN, helium and nitrogen gas is injected into the system such that it passes through the resonance zone. These highly ionised gases provide sufficient energy to ionise the silane gas, which is injected further downstream. It is demonstrated that a gas phase reaction occurs between the silane and nitrogen species. It is control of the ratio of silane to nitrogen in the plasma which is critical for the production of stoichiometric a-SiN. Material has been produced at 80°C with a Si:N ratio of 1:1.3 a breakdown strength of ∼6 MV cm-1 and resistivity of > 1014 Ω cm. In the case of a-Si:H, helium and hydrogen gas is injected into the ECR zone and silane is injected downstream. It is shown that control of the gas phase reactions is critical in this process also. a-Si:H has been deposited at 80 °C with a dark conductivity of 10-11 Ω-1 cm-1 and a photosensitivity of justbelowl 4×104. Such materials are suitable for use in thin film transistors on plastic substrates.

Losses in inductor-less piezoelectric transformer ballast for compact fluorescent lamps

In this study an inductor-less piezoelectric transformer (PT) based ballast for a 5 W CFL has been designed and simulated. The predictions of circuit currents and losses closely match experimentally measured values. The total simulated loss figure was confirmed against practically determined losses using a precision mini-calorimeter. Using simulation to disaggregate the total loss figure, it is seen that the PT makes the largest contribution to the total losses in such ballast.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.

Differences between FRP bond behavior in cracked and uncracked regions

Based on an analysis of the experimental results of a proposed bond test method, significant differences are shown to exist between the local FRP bond stress-slip relationships in the uncracked anchorage regions and in the regions between cracks. The proposed method simulates the bond behavior between the flexural cracks and anchorage regions of a flexurally FRP-strengthened RC beam. The boundary conditions, including the presence of cracks and steel, are shown to have significant effects on the local bond stress-slip models. The results showed that, at the same force, the bond stresses in the regions between cracks were lower than in regions outside the cracks, so the debonding formed in the anchorage regions. The local bond stress-slip models in the anchorage regions can be obtained from the conventional bond test methods but these do not mimic the conditions between the cracks.

A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2, a fast turn-off time of 75 ns by the standard RG1 test (I F=0.5A, I R=1A, and I RR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

Tsunami wave runup on the clustered islands using boussinesq-type model

This paper describes the implementation of the Boussinesq-type model and extends its application to the tsunami wave runup on the clustered islands (multiple adjacent conical islands), in turn, an extensively validated two-dimensional Boussinesq-type model is employed to examine the interaction between a propagating solitary wave and multiple idealised conical islands, with particular emphasis on a combination effect of two adjustable parameters for spacing interval/diameter ratio between the adjacent conical islands, S/D, and the rotating angle of the structural configuration,θ on maximum soliton runup heights. An extensive parameter study concerning the combination effect of alteringθ and S/D on the maximum soliton runup with the multi-conical islands is subsequently carried out and the distributions of the maximum runup heights on each conical island are obtained and compared for the twin-island cases. The worst case study is performed for each case in respect of the enhancement in the maximum wave runup heights by the multi-conical islands. It is found that the nonlinear wave diffraction, reflection and refraction play a significant role in varying the maximum soliton runup heights on multiconical islands. The comparatively large maximum soliton runups are generally predicted for the merged and bottom mounted clusteredislands. Furthermore, the joints of the clustered-merged islands are demonstrated to suffer the most of the tsunami wave attack. The conical islands that position in the shadow regions behind the surrounding islands are found to withstand relatively less extreme wave impact. Although, these numerical investigations are considerable simplifications of the multi conical islands, they give a critical insight into certain important hydrodynamic characteristics of the interaction between an extreme wave event and a group of clustered conical islands, and thus providing a useful engineering guidance for extreme wave mitigation and coastal development. Copyright © 2012 by the International Society of Offshore and Polar Engineers (ISOPE).

Thermal stratification produced by plumes and jets in enclosed spaces

The airflow and thermal stratification produced by a localised heat source located at floor level in a closed room is of considerable practical interest and is commonly referred to as a 'filling box'. In rooms with low aspect ratios H/R ≲ 1 (room height H to characteristic horizontal dimension R) the thermal plume spreads laterally on reaching the ceiling and a descending horizontal 'front' forms separating a stably stratified, warm upper region from cooler air below. The stratification is well predicted for H/R ≲ 1 by the original filling box model of Baines and Turner (J. Fluid. Mech. 37 (1968) 51). This model represents a somewhat idealised situation of a plume rising from a point source of buoyancy alone-in particular the momentum flux at the source is zero. In practical situations, real sources of heating and cooling in a ventilation system often include initial fluxes of both buoyancy and momentum, e.g. where a heating system vents warm air into a space. This paper describes laboratory experiments to determine the dependence of the 'front' formation and stratification on the source momentum and buoyancy fluxes of a single source, and on the location and relative strengths of two sources from which momentum and buoyancy fluxes were supplied separately. For a single source with a non-zero input of momentum, the rate of descent of the front is more rapid than for the case of zero source momentum flux and increases with increasing momentum input. Increasing the source momentum flux effectively increases the height of the enclosure, and leads to enhanced overturning motions and finally to complete mixing for highly momentum-driven flows. Stratified flows may be maintained by reducing the aspect ratio of the enclosure. At these low aspect ratios different long-time behaviour is observed depending on the nature of the heat input. A constant heat flux always produces a stratified interior at large times. On the other hand, a constant temperature supply ultimately produces a well-mixed space at the supply temperature. For separate sources of momentum and buoyancy, the developing stratification is shown to be strongly dependent on the separation of the sources and their relative strengths. Even at small separation distances the stratification initially exhibits horizontal inhomogeneity with localised regions of warm fluid (from the buoyancy source) and cool fluid. This inhomogeneity is less pronounced as the strength of one source is increased relative to the other. Regardless of the strengths of the sources, a constant buoyancy flux source dominates after sufficiently large times, although the strength of the momentum source determines whether the enclosure is initially well mixed (strong momentum source) or stably stratified (weak momentum source). © 2001 Elsevier Science Ltd. All rights reserved.

Material efficiency: providing material services with less material production.

Material efficiency, as discussed in this Meeting Issue, entails the pursuit of the technical strategies, business models, consumer preferences and policy instruments that would lead to a substantial reduction in the production of high-volume energy-intensive materials required to deliver human well-being. This paper, which introduces a Discussion Meeting Issue on the topic of material efficiency, aims to give an overview of current thinking on the topic, spanning environmental, engineering, economics, sociology and policy issues. The motivations for material efficiency include reducing energy demand, reducing the emissions and other environmental impacts of industry, and increasing national resource security. There are many technical strategies that might bring it about, and these could mainly be implemented today if preferred by customers or producers. However, current economic structures favour the substitution of material for labour, and consumer preferences for material consumption appear to continue even beyond the point at which increased consumption provides any increase in well-being. Therefore, policy will be required to stimulate material efficiency. A theoretically ideal policy measure, such as a carbon price, would internalize the externality of emissions associated with material production, and thus motivate change directly. However, implementation of such a measure has proved elusive, and instead the adjustment of existing government purchasing policies or existing regulations-- for instance to do with building design, planning or vehicle standards--is likely to have a more immediate effect.