34 resultados para Inverter multilivello ,Modulatori PWM ,Motore-asincrono ,Trifase ,Ponte-IGBT


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In recent years, Silicon Carbide (SiC) semiconductor devices have shown promise for high density power electronic applications, due to their electrical and thermal properties. In this paper, the performance of SiC JFETs for hybrid electric vehicle (HEV) applications is investigated at heatsink temperatures of 100 °C. The thermal runaway characteristics, maximum current density and packaging temperature limitations of the devices are considered and the efficiency implications discussed. To quantify the power density capabilities of power transistors, a novel 'expression of rating' (EoR) is proposed. A prototype single phase, half-bridge voltage source inverter using SiC JFETs is also tested and its performance at 25 °C and 100 °C investigated.

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Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics. © 2009 American Institute of Physics.

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This paper presents a compact integrated power electronic module (IPEM) which seeks to overcome the volumetric power density limitations of conventional packaging technologies. A key innovation has been the development of a substrate sandwich structure which permits double side cooling of the embedded dies whilst controlling the mechanical stresses both within the module and at the heat exchanger interface. A 3-phase inverter module has been developed, integrating the sandwich structures with high efficiency impingement coolers, delink capacitance and gate drive units. Full details of the IPEM construction and electrical evaluation are given in the paper. © 2007 IEEE.