Optimum design of 1.4KV trench IGBTs - The next generation of high power switching devices

The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1-4 kV) to HVDC (6.5 kV). Here we present for the first time an optimum design of a 1.4kV Trench IGBT using a new, fully integrated optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4kV Trench IGBTs which are in excellent agreement with the TCAD predictions are reported.

High power short pulse generation at high repetition rate from InGaN violet laser diodes

The generation of 22 ps pulses with peak powers of 0.74 W by a gain-switched InGaN violet laser diode is reported. Significant pulse width dependence on repetition rate is observed. © 2011 OSA.

Design of high power tapered waveguide semiconductor lasers

An advanced beam propagation model was developed to show that the far field narrows with good suppression of higher order modes for an appropriate temperature rise, without significant power penalty. To verify the accuracy of the model, the dependence of far field pattern on bias conditions were assessed both experimentally and theoretically, initially under pulsed conditions to reduce thermal effects. The results highlight the optimum taper angle and the role of local heating effects.

High power laser with integrated lens using focused ion beam etching

In this study, a collimating lens is introduced at the output facet of a tapered waveguide laser to compensate for the divergence of the optical mode. The collimating lens is shown to enhance the laser efficiency while simultaneously reducing the far field divergence.

High-power and picosecond pulse generation from a passively Q-switched tapered InGaAs/GaAs laser

Tapered waveguides have been used for enhancing pulse powers in Q-switched AlGaAs and InGaAsP lasers. This paper reports on passively Q-switched pulses with 1.53 W peak power and 41-ps FWHM from an InGaAs/GasAs (970 nm) double-contact tapered semiconductor laser in a well defined single-lobed far-field.

Plume attenuation under high power Nd:yttritium-aluminum-garnet laser welding

During high-power continuous wave (cw) Nd:yttritium-aluminum-garnet (YAG) laser welding a vapor plume is formed containing vaporized material ejected from the keyhole. The gas used as a plume control mechanism affects the plume shape but not its temperature, which has been found to be less than 3000 K, independent of the atmosphere and plume control gases. In this study high-power (up to 8 kW) cw Nd:YAG laser welding has been performed under He, Ar, and N2 gas atmospheres, extending the power range previously studied. The plume was found to contain very small evaporated particles of diameter less than 50 nm. Rayleigh and Mie scattering theories were used to calculate the attenuation coefficient of the incident laser power by these small particles. In addition the attenuation of a 9 W Nd:YAG probe laser beam, horizontally incident across the plume generated by the high-power Nd:YAG laser, was measured at various positions with respect to the beam-material interaction point. Up to 40% attenuation of the probe laser power was measured at positions corresponding to zones of high concentration of vapor plume, shown by high-speed video measurements. These zones interact with the high-power Nd:YAG laser beam path and, can result in significant laser power attenuation. © 2004 Laser Institute of America.

Laser-vapour interaction in high-power cw Nd:YAG laser welding

During high-power cw Nd:YAG laser welding a vapour plume is formed containing vaporised material ejected from the keyhole. Spectroscopic studies of the vapour emission have demonstrated that the vapour can be considered as thermally excited gas with a stable temperature (less than 3000K), not as partially ionised plasma. In this paper, a review of temperatures in the vapour plume is presented. The difficulties in the analysis of the plume spectroscopic results are reviewed and explained. It is shown that particles present in the vapour interact with the laser beam, attenuating it. The attenuation can be calculated with Mie scattering theory, however, vaporisation and particle formation also both play a major role in this process. The laser beam is also defocused due to the scattering part of the attenuation mechanism, changing the energy density in the laser beam. Methods for mitigating the effects of the laser beam-vapour interaction, using control gases, are presented together with their advantages and disadvantages. This 'plume control' has two complementary roles: firstly, the gas must divert the vapour plume from out of the laser beam path, preventing the attenuation. Secondly, the gas has to stabilise the front wall of the keyhole, to prevent porosity formation.