Effects of cooling time on a closed LWR fuel cycle

In this study, the effects of cooling time prior to reprocessing spent LWR fuel has on the reactor physics characteristics of a PWR fully loaded with homogeneously mixed U-Pu or U-TRU oxide (MOX) fuel is examined. A reactor physics analysis was completed using the CASM04e code. A void reactivity feedback coefficient analysis was also completed for an infinite lattice of fresh fuel assemblies. Some useful conclusions can be made regarding the effect that cooling time prior to reprocessing spent LWR fuel has on a closed homogeneous MOX fuel cycle. The computational analysis shows that it is more neutronically efficient to reprocess cooled spent fuel into homogeneous MOX fuel rods earlier rather than later as the fissile fuel content decreases with time. Also, the number of spent fuel rods needed to fabricate one MOX fuel rod increases as cooling time increases. In the case of TRU MOX fuel, with time, there is an economic tradeoff between fuel handling difficulty and higher throughput of fuel to be reprocessed. The void coefficient analysis shows that the void coefficient becomes progressively more restrictive on fuel Pu content with increasing spent fuel cooling time before reprocessing.

Gate commutated thyristor with voltage independent maximum controllable current

In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clarify the mechanisms that limit safe switching at different dc-link voltages. The 3-D simulation results show that the HPT design can increase the maximum controllable current in 24 mm diameter devices beyond the realm of GCT switching, known as the hard-drive limit. It is proposed that the maximum controllable current becomes independent of the dc-link voltage for the complete range of operating voltage. © 1980-2012 IEEE.

Parameters influencing the maximum controllable current in gate commutated thyristors

The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration. © The Institution of Engineering and Technology 2014.