Low attenuation of GHz Rayleigh-like surface acoustic waves in ZnO/GaAs systems immersed in liquid helium

Low attenuation of Sezawa modes operating at GHz frequencies in ZnO/GaAs systems immersed in liquid helium has been observed. This unexpected behaviour for Rayleigh-like surface acoustic waves (SAWs) is explained in terms of the calculated depth profiles of their acoustic Poynting vectors. This analysis allows reproduction of the experimental dispersion of the attenuation coefficient. In addition, the high attenuation of the Rayleigh mode is compensated by the strengthening provided by the ZnO layer. The introduction of the ZnO film will enable the operation of SAW-driven single-photon sources in GaAs-based systems with the best thermal stability provided by the liquid helium bath. © 2013 American Institute of Physics.

1.5 GHz picosecond pulse generation from a monolithic waveguide laser with a graphene-film saturable output coupler

We fabricate a saturable absorber mirror by coating a graphenefilm on an output coupler mirror. This is then used to obtain Q-switched mode-locking from a diode-pumped linear cavity channel waveguide laser inscribed in Ytterbium-doped Bismuthate Glass. The laser produces 1.06 ps pulses at ∼1039 nm, with a 1.5 GHz repetition rate, 48% slope efficiency and 202 mW average output power. This performance is due to the combination of the graphene saturable absorber and the high quality optical waveguides in the laser glass. © 2013 Optical Society of America.

Generation of picosecond pulses with a repetition frequency of 100 GHz by a multicomponent injection laser

A mode for generating a sequence of spectrally limited pulses with a duration of 2 nsec and a repetition frequency of approximately 100 GHz in AlGaAs/GaAs by an injection heterolaser, which has amplifying and absorbing parts combined in a common resonator, is discussed.

Generation of bandwidth-limited 2 ps pulses with 100 GHz repetition rate from multisegmented injection laser

A new dynamic regime in a multisegmented AlGaAs/GaAs DH injection laser has been realised. Generation of bandwidth-limited 100 GHz repetition rate pulses has been demonstrated. This value is claimed to be the largest ever reported for an ultrashort pulse repetition frequency obtained directly from a laser.

2.1 GHz MOS mixer linearisation approach for IIP2 enhancement using multiple factor compensation

An integrated downconversion CMOS mixer incorporating a comprehensive compensation scheme is presented which aims to minimise second-order intermodulation distortion (IMD2). Unlike previously reported IMD2 calibration schemes which tune only one nonlinear factor at a time, the presented solution allows simultaneous adjustment of several different factors thus achieving a better compensation. The mixer has been implemented in UMC 0.18 μm CMOS to verify the proposed scheme and for comparison with alternative compensation methods. Measurements show that the solution described can improve the input intercept point (IIP2) by over 20 dB while maintaining good amplification and noise performance. IMD2 calibration results are presented and show useful advantages over other approaches. To the best of the authors' knowledge, this scheme for IMD2 calibration has not been previously reported. © The Institution of Engineering and Technology 2013.

Experimental demonstration of a transparent graphene millimetre wave absorber with 28% fractional bandwidth at 140 GHz.

The development of transparent radio-frequency electronics has been limited, until recently, by the lack of suitable materials. Naturally thin and transparent graphene may lead to disruptive innovations in such applications. Here, we realize optically transparent broadband absorbers operating in the millimetre wave regime achieved by stacking graphene bearing quartz substrates on a ground plate. Broadband absorption is a result of mutually coupled Fabry-Perot resonators represented by each graphene-quartz substrate. An analytical model has been developed to predict the absorption performance and the angular dependence of the absorber. Using a repeated transfer-and-etch process, multilayer graphene was processed to control its surface resistivity. Millimetre wave reflectometer measurements of the stacked graphene-quartz absorbers demonstrated excellent broadband absorption of 90% with a 28% fractional bandwidth from 125-165 GHz. Our data suggests that the absorbers' operation can also be extended to microwave and low-terahertz bands with negligible loss in performance.

Monolithic electro-optically modulated VCSEL suitable for radio over fibre applications to 20 GHz

An integrated EOM VCSELs is shown to offer high linearity (92dB/Hz2/3 at 6GHz) and by extrapolation ~90dB/Hz2/3 up to 20GHz. Successful modulation with IEEE 802.11g signals is demonstrated at 6GHz with a 12dB dynamic range. © OSA/OFC/NFOEC 2011.

Colliding-pulse modelocked quantum dot lasers

Colliding pulse modelocking is demonstrated for the first time in quantum dot lasers. Using 3.9 mm-long devices with a 245 pm-long central absorber, 7 ps pulses at a repetition rate of 20 GHz is obtained. For Gaussian pulses a time-bandwidth product close to the Fourier transform limit is determined. These results confirm the potential of quantum dot lasers for high repetition rate harmonic modelocking.

Broad spectrum measurement of the birefringence of an isothiocyanate based liquid crystal.

Tunable materials with high anisotropy of refractive index and low loss are of particular interest in the microwave and terahertz range. Nematic liquid crystals are highly sensitive to electric and magnetic fields and may be designed to have particularly high birefringence. In this paper we investigate birefringence and absorption losses in an isothiocyanate based liquid crystal (designed for high anisotropy) in a broad range of the electromagnetic spectrum, namely 0.1-4 GHz, 30 GHz, 0.5-1.8 THz, and in the visible and near-infrared region (400 nm-1600 nm). We report high birefringence (Δn = 0.19-0.395) and low loss in this material. This is attractive for tunable microwave and terahertz device applications.

High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining

This paper reports the fabrication and electrical characterization of high tuning range AlSi RF MEMS capacitors. We present experimental results obtained by a surface micromachining process that uses dry etching of sacrificial amorphous silicon to release Al-1%Si membranes and has a low thermal budget (<450 °C) being compatible with CMOS post-processing. The proposed silicon sacrificial layer dry etching (SSLDE) process is able to provide very high Si etch rates (3-15 μm/min, depending on process parameters) with high Si: SiO2 selectivity (>10,000:1). Single- and double-air-gap MEMS capacitors, as well as some dedicated test structures needed to calibrate the electro-mechanical parameters and explore the reliability of the proposed technology, have been fabricated with the new process. S-parameter measurements from 100 MHz up to 2 GHz have shown a capacitance tuning range higher than 100% with the double-air-gap architecture. The tuning range can be enlarged with a proper DC electrical bias of the capacitor electrodes. Finally, the reported results make the proposed MEMS tuneable capacitor a good candidate for above-IC integration in communications applications. © 2004 Elsevier B.V. All rights reserved.

Capacitive nanoelectromechanical switch based on suspended carbon nanotube array

We present the fabrication and high frequency characterization of a capacitive nanoelectromechanical system (NEMS) switch using a dense array of horizontally aligned single-wall carbon nanotubes (CNTs). The nanotubes are directly grown onto metal layers with prepatterned catalysts with horizontal alignment in the gas flow direction. Subsequent wetting-induced compaction by isopropanol increases the nanotube density by one order of magnitude. The actuation voltage of 6 V is low for a NEMS device, and corresponds to CNT arrays with an equivalent Young's modulus of 4.5-8.5 GPa, and resistivity of under 0.0077 Ω·cm. The high frequency characterization shows an isolation of -10 dB at 5 GHz. © 2010 American Institute of Physics.

High peak power femtosecond pulse VECSELs for terahertz time domain spectroscopy

We report on a high peak power femtosecond modelocked VECSEL and its application as a drive laser for an all semiconductor terahertz time domain spectrometer. The VECSEL produced near-transform-limited 335 fs sech2 pulses at a fundamental repetition rate of 1 GHz, a centre wavelength of 999 nm and an average output power of 120 mW. We report on the effect that this high peak power and short pulse duration has on our generated THz signal.

Full-duplex wireless-over-fibre transmission incorporating a CWDM ring architecture with remote millimetre-wave LO delivery using a bi-directional SOA

We demonstrate the first full-duplex wireless-over-fibre transmission between a central station and a CWDM ring architecture with remote 40 GHz LO delivery using a bi-directional semiconductor optical amplifier. © 2005 Optical Society of America.

Gigabit Pulse Position Bistability in Semiconductor Lasers

The paper briefly reviews the major forms of optical bistability in active optical devices compatible for use in gigabit optical communication systems, and reports an entirely new optical bistability for the first time. Unlike previous devices, the two bistable states of the optical device are each a series of picosecond optical pulses at 1 GHz or greater repetition rates, and are distinguished by a half period temporal shift between their temporal positions in relation to a clock pulse. The bistable device is based on a gain switched semiconductor laser. Theoretical studies suggest 100-ps switching speeds might be achieved, and experimental results are reported indicating optically triggered switching times of 500 ps. © 1987, American Medical Association. All rights reserved.

A study of frequency response in silicon heterojunction bipolar transistors with amorphous silicon emitters

A detailed physical model of amorphous silicon (aSi:H) is incorporated into a twodimensional device simulator to examine the frequency response limits of silicon heterojunction bipolar transistors (HBT's) with aSi:H emitters. The cutoff frequency is severely limited by the transit time in the emitter space charge region, due to the low electron drift mobility in aSi:H, to 98 MHz which compares poorly with the 37 GHz obtained for a silicon homojunction bipolar transistor with the same device structure. The effects of the amorphous heteroemitter material parameters (doping, electron drift mobility, defect density and interface state density) on frequency response are then examined to find the requirements for an amorphous heteroemitter material such that the HBT has better frequency response than the equivalent homojunction bipolar transistor. We find that an electron drift mobility of at least 100 cnr'V"'"1 is required in the amorphous heteroemitter and at a heteroemitter drift mobility of 350 cm2 · V1· s1 and heteroemitter doping of 5×1017 cm3, a maximum cutoff frequency of 52 GHz can be expected. © 1996 IEEE.