A highly conductive and transparent solution processed AZO/MWCNT nanocomposite

A solution processed aluminum-doped zinc oxide (AZO)/multi-walled carbon nanotube (MWCNT) nanocomposite thin film has been developed offering simultaneously high optical transparency and low electrical resistivity, with a conductivity figure of merit (σDC/σopt) of ~75-better than PEDOT:PSS and many graphene derivatives. The reduction in sheet resistance of thin films of pristine MWCNTs is attributed to an increase in the conduction pathways within the sol-gel derived AZO matrix and reduced inter-MWCNT contact resistance. Films have been extensively characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), X-ray diffractometry (XRD), photoluminescence (PL), and ultraviolet-visible (UV-vis) spectroscopy. © 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Strength and hydration products of reactive MgO-silica pastes

The reaction between MgO and microsilica has been studied by many researchers, who confirmed the formation of magnesium silicate hydrate. The blend was reported to have the potential as a novel material for construction and environment purposes. However, the characteristics of MgO vary significantly, e.g., reactivity and purity, which would have an effect on the hydration process of MgO-silica blend. This paper investigated the strength and hydration products of reactive MgO and silica blend at room temperature up to 90 days. The existence of magnesium silicate hydrate after 7 days' curing was confirmed with the help of infrared spectroscopy, thermogravimetric analysis and X-ray diffraction. The microstructural and elemental analysis of the resulting magnesium silicate hydrate was conducted using scanning electron microscopy and energy dispersive spectroscopy. In addition, the effect of characteristics of MgO on the hydration process was discussed. It was found that the synthesis of magnesium silicate hydrate was highly dependent on the reactivity of the precursors. MgO and silica with higher reactivity resulted in higher formation rate of magnesium silicate hydrate. In addition, the impurity in the MgO affects the pH value of the blends, which in turn determines the solubility of silica and the formation of magnesium silicate hydrate. © 2014 Elsevier Ltd. All rights reserved.

X-ray propagation in carbon nanotubes

The maintenance of the growth of the multibillion-dollar semiconductor industry requires the development of techniques for the fabrication and characterisation of nanoscale devices. Consequently, there is great interest in photolithography techniques such as extreme UV and x-ray. Both of these techniques are extremely expensive and technologically very demanding. In this paper we describe research on the feasibility of exploiting x-ray propagation within carbon nanotubes (CNT's) for the fabrication and characterisation of nanoscale devices. This work discusses the parameters determining the design space available. To demonstrate experimentally the feasibility of x-ray propagation, arrays of carbon nanotubes have been grown on silicon membranes. The latter are required to provide structural support for the CNT's while minimising energy loss. To form a waveguide metal is deposited between the nanotubes to block x-ray transmission in this region at the same time as cladding the CNT's. The major challenge has been to fill the spaces between the CNT's with material of sufficient thickness to block x-ray transmission while maintaining the structural integrity of the CNT's. Various techniques have been employed to fill the gaps between the nanotubes including electroplating, sputtering and evaporation. This work highlights challenges encountered in optimising the process.

Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes, and are smooth and uniform across whole wafers, as inspected by optical-, scanning electron-, and atomic force microscopy. The sp 2 hybridized carbon structure is confirmed by Raman spectroscopy. Room temperature electrical measurements show ohmic behavior (sheet resistance similar to exfoliated graphene) and up to 13 of electric-field effect. The Hall mobility is ∼40 cm 2/Vs, which is an order of magnitude higher than previously reported values for nanocrystalline graphene. Transmission electron microscopy, Raman spectroscopy, and transport measurements indicate a graphene crystalline domain size ∼10 nm. The absence of transfer to another substrate allows avoidance of wrinkles, holes, and etching residues which are usually detrimental to device performance. This work provides a broader perspective of graphene CVD and shows a viable route toward applications involving transparent electrodes. © 2012 American Institute of Physics.

Porous boron-doped diamond/carbon nanotube electrodes.

Nanostructuring boron-doped diamond (BDD) films increases their sensitivity and performance when used as electrodes in electrochemical environments. We have developed a method to produce such nanostructured, porous electrodes by depositing BDD thin film onto a densely packed "forest" of vertically aligned multiwalled carbon nanotubes (CNTs). The CNTs had previously been exposed to a suspension of nanodiamond in methanol causing them to clump together into "teepee" or "honeycomb" structures. These nanostructured CNT/BDD composite electrodes have been extensively characterized by scanning electron microscopy, Raman spectroscopy, cyclic voltammetry, and electrochemical impedance spectroscopy. Not only do these electrodes possess the excellent, well-known characteristics associated with BDD (large potential window, chemical inertness, low background levels), but also they have electroactive areas and double-layer capacitance values ∼450 times greater than those for the equivalent flat BDD electrodes.

Optimizing the energy offset between dye and hole-transporting material in solid-state dye-sensitized solar cells

The power-conversion efficiency of solid-state dye-sensitized solar cells can be optimized by reducing the energy offset between the highest occupied molecular orbital (HOMO) levels of dye and hole-transporting material (HTM) to minimize the loss-in-potential. Here, we report a study of three novel HTMs with HOMO levels slightly above and below the one of the commonly used HTM 2,2′,7,7′- tetrakis(N,N-di-p-methoxyphenylamino)-9,9′- spirobifluorene (spiro-OMeTAD) to systematically explore this possibility. Using transient absorption spectroscopy and employing the ruthenium based dye Z907 as sensitizer, it is shown that, despite one new HTM showing a 100% hole-transfer yield, all devices based on the new HTMs performed worse than those incorporating spiro-OMeTAD. We further demonstrate that the design of the HTM has an additional impact on the electronic density of states present at the TiO2 electrode surface and hence influences not only hole- but also electron-transfer from the sensitizer. These results provide insight into the complex influence of the HTM on charge transfer and provide guidance for the molecular design of new materials. © 2013 American Chemical Society.

Dynamical behavior of damped driven coupled single electron simple harmonic oscillators

Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads to a wide distribution in trap properties, allowing more than 1000 traps to be individually addressed in a single transistor within the accessible frequency domain. Their dynamical behavior is explored by pulsing the microwave excitation over a range of times comparable to the phase coherence time and the lifetime of the electron in the trap. Trap occupancy is limited to a single electron, which can be manipulated by resonant microwave excitation and the resulting change in trap occupancy is detected by the change in the channel current of the transistor. The trap behavior is described by a classical damped driven simple harmonic oscillator model, with the phase coherence, lifetime and coupling strength parameters derived from a continuous wave (CW) measurement only. For pulse times shorter than the phase coherence time, the energy exchange between traps, due to the coupling, strongly modulates the observed drain current change. This effect could be exploited for 2-qubit gate operation. The very large number of resonances observed in this system would allow a complex multi-qubit quantum mechanical circuit to be realized by this mechanism using only a single transistor.