Application of electron beams in thermal processing of semiconductor materials and devices

Rapid and effective thermal processing methods using electron beams are described in this paper. Heating times ranging from a fraction of a second to several seconds and temperatures up to 1400°C are attainable. Applications such as the annealing of ion implanted material, both without significant dopant diffusion and with highly controlled diffusion of impurities, are described. The technique has been used successfully to activate source/drain regions for fine geometry NMOS transistors. It is shown that electron beams can produce localised heating of semiconductor substrates and a resolution of approximately 1 μm has been achieved. Electron beam heating has been applied to improving the crystalline quality of silicon-on sapphire used in CMOS device fabrication. Silicon layers with defect levels approaching bulk material have been obtained. Finally, the combination of isothermal and selective annealing is shown to have application in recrystallisation of polysilicon films on an insulating layer. The approach provides the opportunity of producing a silicon-on-insulator substrate with improved crystalline quality compared to silicon-on-sapphire at a potentially lower cost. It is suggested that rapid heating methods are expected to provide a real alternative to conventional furnace processing of semiconductor devices in the development of fabrication technology. © 1984 Benn electronics Publications Ltd, Luton.

Correlation between density of states distributions and the fermi level position in interfacial regions of amorphous silicon thin film transistors

This paper investigates the variation of the integrated density of states with conduction activation energy in hydrogenated amorphous silicon thin film transistors. Results are given for two different gate insulator layers, PECVD silicon oxide and thermally grown silicon dioxide. The different gate insulators produce transistors with very different initial transfer characteristics, but the variation of integrated density of states with conduction activation energy is shown to be similar.

Low Molar Mass Organosiloxane Liquid Crystalline Dyes for Dye Guest Host Ferroelectric Display Devices

In low molar mass organosiloxane liquid-crystal materials the siloxane moieties micro-separate and aggregate in planes that could be regarded as an effective or virtual two-dimensional polymer backbone. We show that if a siloxane moiety is attached to a dichroic dye molecule, the micro-segregation of the siloxane moieties makes it possible to include a high concentration of the guest dye (more than 50%) in a host organosiloxane solution. This effect, combined with the temperature independent tilt angles achievable with ferroelectric organosiloxane liquid crystals, provide an ideal material for high-contrast surface-stabilised ferroelectric display devices. We present dyed ferroelectric materials with a temperature independent tilt angle greater than 42 degrees, a wide (room temperature to over 100°C) mesomorphic temperature range and a response time shorter than 500μs in the dye guest host mode.