Evaluation and modeling of lanthanum diffusion in TiN/La 2O 3/HfSiON/SiO 2/Si high-k stacks

In this study, TiN/La 2O 3/HfSiON/SiO 2/Si gate stacks with thick high-k (HK) and thick pedestal oxide were used. Samples were annealed at different temperatures and times in order to characterize in detail the interaction mechanisms between La and the gate stack layers. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements performed on these samples show a time diffusion saturation of La in the high-k insulator, indicating an La front immobilization due to LaSiO formation at the high-k/interfacial layer. Based on the SIMS data, a technology computer aided design (TCAD) diffusion model including La time diffusion saturation effect was developed. © 2012 American Institute of Physics.

TWO TUTORIAL EXAMPLES OF MULTIVARIABLE CONTROL SYSTEM DESIGN.

Two tutorial examples are presented which illustrate different methods of designing practical multivariable control systems using frequency-domain techniques. In the first case eigenvector alignment techniques are used to manipulate and shape the generalized Nyquist diagrams, while in the second case LQG theory in conjunction with singular value plots is employed. In both cases the designs are carried out on a modern computer-aided control-system design package.