33 resultados para Borate buffer


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Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is one of the most promising conducting polymers that can be used as transparent electrode or as buffer layer for organic electronic devices. However, when used as an electrode, its conductivity has to be optimized either by the addition of solvents or by post-deposition processing. In this work, we investigate the effect of the addition of the polar solvent dimethylsulfoxide (DMSO) to an aqueous PEDOT:PSS solution on its optical and electrical properties by the implementation of the Drude model for the analysis of the measured pseudo-dielectric function by Spectroscopic Ellipsometry from the near infrared to the visible-far ultraviolet spectral range. The results show that the addition of DMSO increases significantly the film conductivity, which reaches a maximum value at an optimum DMSO concentration as it has confirmed by experimentally measured conductivity values. The post-deposition thermal annealing has been found to have a smaller effect on the film conductivity. © 2013 Elsevier B.V.

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A model for off-wall boundary conditions for turbulent flow is investigated. The objective of such a model is to circumvent the need to resolve the buffer layer near the wall, by providing conditions in the logarithmic layer for the overlying flow. The model is based on the self-similarity of the flow at different heights in the logarithmic layer. It was first proposed by Mizuno and Jiménez (2013), imposing at the boundary plane a velocity field obtained on-the-fly from an overlying region. The key feature of the model was that the lengthscales of the field were rescaled to account for the self-similarity law. The model was successful at sustaining a turbulent logarithmic layer, but resulted in some disagreements in the flow statistics, compared to fully-resolved flows. These disagreements needed to be addressed for the model to be of practical application. In the present paper, a more refined, wavelength-dependent rescaling law is proposed, based on the wavelength-dependent dynamics in fully-resolved flows. Results for channel flow show that the new model eliminates the large artificial pressure fluctuations found in the previous one, and a better agreement is obtained in the bulk properties, the flow fluctuations, and their spectral distribution across the whole domain. © Published under licence by IOP Publishing Ltd.

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The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration. © The Institution of Engineering and Technology 2014.