63 resultados para Atmospheric physics.


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A pin-on-disc apparatus has been used to obtain continuous simultaneous measurements of the wear and friction (sliding force) behaviour of metals on bonded silicon carbide abrasive paper under conditions of controlled humidity. Iron, mild steel, and copper exhibit qualitatively similar wear behaviour; the wear rate decreases progressively with the number of passes over the same track. In contrast, the wear rate of titanium remains constant. Variation in atmospheric humidity has little effect on the wear rates of copper or titanium, although a slight effect was found in mild steel and iron. Refs.

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A pin-on-disc apparatus has been used to investigate the wear and friction (sliding force) behavior of metals on bonded silicon carbide and alumina papers under conditions of controlled atmospheric composition. The wear rates of both commercial purity titanium and the alloy Ti-6%Al-4%V tested in air were found to remain constant with time, in contrast with the behavior of other metals tested under similar conditions, which exhibited a progressive decrease in wear rate with increasing number of passes along the same track. It is proposed that the concentration of interstitial nitrogen and oxygen in the worn metal surface, which largely determines its mechanical properties, strongly influences both the ductility of the abraded material and the force of adhesion between the metal and the abrasive particles. Parallels are drawn between abrasive wear and machining to illustrate the importance of oxygen at the interface between workpiece and tool surfaces.

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This paper presents a practical destruction-free parameter extraction methodology for a new physics-based circuit simulator buffer-layer Integrated Gate Commutated Thyristor (IGCT) model. Most key parameters needed for this model can be extracted by one simple clamped inductive-load switching experiment. To validate this extraction method, a clamped inductive load switching experiment was performed, and corresponding simulations were carried out by employing the IGCT model with parameters extracted through the presented methodology. Good agreement has been obtained between the experimental data and simulation results.

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We present an overview of the single-transistor memory cells (lT-DRAMs), which are based on floating-body effects in SOI MOSFETs. The typical device architectures, principles of operation and key mechanisms for programming are described. The various approaches (Z-RAM, MSDRAM, etc) are compared in terms of performance and potential for aggressive scaling. ©The Electrochemical Society.

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Over recent years we have developed and published research aimed at producing a meshing, geometry editing and simulation system capable of handling large scale, real world applications and implemented in an end-to-end parallel, scalable manner. The particular focus of this paper is the extension of this meshing system to include conjugate meshes for multi-physics simulations. Two contrasting applications are presented: export of a body-conformal mesh to drive a commercial, third-party simulation system; and direct use of the cut-Cartesian octree mesh with a single, integrated, close-coupled multi-physics simulation system. Copyright © 2010 by W.N.Dawes.