Mechanisms of erosion of unfilled elastomers by solid particle impact

The mechanisms of material removal were studied during the erosion of two unfilled elastomers (natural rubber and epoxidised natural rubber). The effects of impact velocity and of lubrication by silicone oil were investigated. The development of surface features due to single impacts and during the early stages of erosion was followed by scanning electron microscopy. The basic material removal mechanism at impact angles of both 30° and 90° involves the formation and growth of fine fatigue cracks under the tensile surface stresses caused by impact. No damage was observed after single impacts; it was found that many successive impacts are necessary for material removal. It was found that the erosion rate has a very strong dependance on impact velocity above about 50 ms-1.

Experimentally validated three dimensional GCT wafer level simulations

In this paper we present a wafer level three-dimensional simulation model of the Gate Commutated Thyristor (GCT) under inductive switching conditions. The simulations are validated by extensive experimental measurements. To the authors' knowledge such a complex simulation domain has not been used so far. This method allows the in depth study of large area devices such as GCTs, Gate Turn Off Thyristors (GTOs) and Phase Control Thyristors (PCTs). The model captures complex phenomena, such as current filamentation including subsequent failure, which allow us to predict the Maximum Controllable turn-off Current (MCC) and the Safe Operating Area (SOA) previously impossible using 2D distributed models. © 2012 IEEE.

The destruction mechanism in GCTs

This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. © 1963-2012 IEEE.