Erratum: "Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors" (IEEE Transactions on Electron Devices (2009))

In the above entitled paper (ibid., vol. 55, no. 11, pp. 3001-3011), two errors were noticed after the paper went to press. The errors are corrected here.

Exploring the process of whole system design

This paper explores the adoption of a whole system approach to a more sustainable and innovative design. A case study methodology was utilised to gain improved understanding of whole system design and those factors that substantially influence its success. The paper presents a framework of those factors including the requirement for trans-disciplinary skills, the dynamics of a flattened hierarchy and the need to identify relationships between parts of the system to ultimately optimise the whole. Knowing the factors that influence the process of whole system design provides designers with the knowledge necessary to more effectively work within, manage and facilitate that process. This paper uses anecdotes taken from operational cases, across design contexts, to demonstrate those factors. © 2010 Elsevier Ltd. All rights reserved.

Analysis of document-mining techniques and tools for technology intelligence: Discovering knowledge from technical documents

This research proposes a method for extracting technology intelligence (TI) systematically from a large set of document data. To do this, the internal and external sources in the form of documents, which might be valuable for TI, are first identified. Then the existing techniques and software systems applicable to document analysis are examined. Finally, based on the reviews, a document-mining framework designed for TI is suggested and guidelines for software selection are proposed. The research output is expected to support intelligence operatives in finding suitable techniques and software systems for getting value from document-mining and thus facilitate effective knowledge management. Copyright © 2012 Inderscience Enterprises Ltd.

SOI membrane-based pressure sensor in stress sensitive differential amplifier configuration

This paper introduces a pressure sensing structure configured as a stress sensitive differential amplifier (SSDA), built on a Silicon-on-Insulator (SOI) membrane. Theoretical calculation show the significant increase in sensitivity which is expected from the pressure sensors in SSDA configuration compared to the traditional Wheatstone bridge circuit. Preliminary experimental measurements, performed on individual transistors placed on the membrane, exhibit state-the-art sensitivity values (1.45mV/mbar). © 2012 IEEE.

Light generation in silicon photonic crystal cavities

Far-field optimized photonic crystal nanocavities are used to strongly increase light generation from crystalline silicon. Low-power continuous-wave harmonic generation as well as efficient room temperature light-emission from optically-active defects are demonstrated in these devices. © 2011 IEEE.

III-V compound semiconductor nanowires

InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter. © 2009 IEEE NANO Organizers.

Parametrically excited MEMS vibration energy harvesters with design approaches to overcome the initiation threshold amplitude

Resonant-based vibration harvesters have conventionally relied upon accessing the fundamental mode of directly excited resonance to maximize the conversion efficiency of mechanical-to-electrical power transduction. This paper explores the use of parametric resonance, which unlike the former, the resonant-induced amplitude growth, is not limited by linear damping and wherein can potentially offer higher and broader nonlinear peaks. A numerical model has been constructed to demonstrate the potential improvements over the convention. Despite the promising potential, a damping-dependent initiation threshold amplitude has to be attained prior to accessing this alternative resonant phenomenon. Design approaches have been explored to passively reduce this initiation threshold. Furthermore, three representative MEMS designs were fabricated with both 25 and 10 μm thick device silicon. The devices include electrostatic cantilever-based harvesters, with and without the additional design modification to overcome initiation threshold amplitude. The optimum performance was recorded for the 25 μm thick threshold-aided MEMS prototype with device volume ∼0.147 mm3. When driven at 4.2 ms -2, this prototype demonstrated a peak power output of 10.7 nW at the fundamental mode of resonance and 156 nW at the principal parametric resonance, as well as a 23-fold decrease in initiation threshold over the purely parametric prototype. An approximate doubling of the half-power bandwidth was also observed for the parametrically excited scenario. © 2013 IOP Publishing Ltd.