High-resolution strain sensing on steel by Silicon-On-Insulator flexural resonators fabricated with chip-level vacuum packaging

This paper reports on the fabrication and characterization of high-resolution strain sensors for steel based on Silicon On Insulator flexural resonators manufactured with chip-level LPCVD vacuum packaging. The sensors present high sensitivity (120 Hz/μ), very high resolution (4 n), low drift, and near-perfect reversibility in bending tests performed in both tensile and compressive strain regimes. © 2013 IEEE.

Finite Element studies on indentation size effect using a higher order strain gradient theory

In this work, a Finite Element implementation of a higher order strain gradient theory (due to Fleck and Hutchinson, 2001) has been used within the framework of large deformation elasto-viscoplasticity to study the indentation of metals with indenters of various geometries. Of particular interest is the indentation size effect (ISE) commonly observed in experiments where the hardness of a range of materials is found to be significantly higher at small depths of indentation but reduce to a lower, constant value at larger depths. That the ISE can be explained by strain gradient plasticity is well known but this work aims to qualitatively compare a gamut of experimental observations on this effect with predictions from a higher order strain gradient theory. Results indicate that many of the experimental observations are qualitatively borne out by our simulations. However, areas exist where conflicting experimental results make assessment of numerical predictions difficult. © 2012 Elsevier Ltd. All rights reserved.

Unified analytic model for current-voltage behavior in amorphous oxide semiconductor TFTs

We present a simple and semi-physical analytical description of the current-voltage characteristics of amorphous oxide semiconductor thin-film transistors in the above-threshold and sub-threshold regions. Both regions are described by single unified expression that employs the same set of model parameter values directly extracted from measured terminal characteristics. The model accurately reproduces measured characteristics of amorphous semiconductor thin film transistors in general, yielding a scatter of < 4%. © 1980-2012 IEEE.

Notch and strain rate sensitivity of non-crimp fabric composites

The notch and strain rate sensitivity of non-crimp glass fibre/vinyl-ester laminates subjected to uniaxial tensile loads has been investigated experimentally. Two sets of notch configurations were tested; one where circular holes were drilled and another where fragment simulating projectiles were fired through the plate creating a notch. Experiments were conducted for strain rates ranging from 10-4 s-1 to 102 s-1 using servo hydraulic machines. A significant increase in strength with increasing strain rate was observed for both notched and un-notched specimens. High speed photography revealed changes in failure mode, for certain laminate configurations, as the strain rate increased. The tested laminate configurations showed fairly small notch sensitivity for the whole range of strain rates. © 2008 Elsevier Ltd. All rights reserved.

Notch and strain rate sensitivity of non crimp fabric composites

The notch and strain rate sensitivity of non-crimp glass fibre/vinyl-ester laminates subjected to uniaxial tensile loads has been investigated experimentally. Two set of notch configurations were tested; one where circular holes were drilled and another where fragment simulating projectiles were fired through the plate creating a notch. Experiments were conducted for strain rates ranging from 10-4/s to 102/s using servo hydraulic machines. A significant increase in strength with increasing strain rate was observed for both notched and unnotched specimens. High speed photography revealed changes in failure mode, for certain laminate configurations, as the strain rate increased. The tested laminate configurations showed fairly small notch sensitivity for the whole range of strain rates.

Silicon optical phase shifter based on strain induced by a piezoelectric PZT thin film

We demonstrate a silicon optical phase shifter based on photoelastic effect controlled by a piezoelectric thin film. The hysteresis behavior of the piezoelectric response shows potential application as bistable device independent of the optical intensity. © 2012 OSA.

Silicon optical phase shifter based on strain induced by a piezoelectric PZT thin film

We demonstrate a silicon optical phase shifter based on photoelastic effect controlled by a piezoelectric thin film. The hysteresis behavior of the piezoelectric response shows potential application as bistable device independent of the optical intensity. © OSA 2012.

Bistability in silicon microring resonator based on strain induced by a piezoelectric lead zirconate titanate thin film

We demonstrate bistability in a submicron silicon optical phase shifter based on the photoelastic effect. The strain magnitude is electrically controlled by a piezoelectric thin film placed on top of the device. The hysteresis behavior of the piezoelectric response shows potential application as bistable device independent of the optical intensity. © 2012 American Institute of Physics.

Numerical simulation of dicke superradiance in a semiconductor laser device

This paper reports a theoretical model for Dicke Superradiance in semiconductor laser devices. Simulations agree well with previously-observed superradiance properties and are used to optimize driving conditions and device geometry. © OSA/ANIC/IPR/Sensors/SL/SOF/SPPCom/2011.

Superradiant emission from a tapered quantum-dot semiconductor diode emitter

Superradiant emission pulses from a quantum-dot tapered device are generated on demand at repetition rates of up to 5 MHz. The pulses have durations as short as 320 fs at a wavelength of 1270 nm. © 2010 Optical Society of America.

Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy

Accurately measuring the electronic properties of nanowires is a crucial step in the development of novel semiconductor nanowire-based devices. With this in mind, optical pump-terahertz probe (OPTP) spectroscopy is ideally suited to studies of nanowires: it provides non-contact measurement of carrier transport and dynamics at room temperature. OPTP spectroscopy has been used to assess key electrical properties, including carrier lifetime and carrier mobility, of GaAs, InAs and InP nanowires. The measurements revealed that InAs nanowires exhibited the highest mobilities and InP nanowires exhibited the lowest surface recombination velocity. © 2013 Copyright SPIE.

Amorphous oxide semiconductor TFTs for displays and imaging

© 2013 IEEE. This paper reviews the mechanisms underlying visible light detection based on phototransistors fabricated using amorphous oxide semiconductor technology. Although this family of materials is perceived to be optically transparent, the presence of oxygen deficiency defects, such as vacancies, located at subgap states, and their ionization under illumination, gives rise to absorption of blue and green photons. At higher energies, we have the usual band-to-band absorption. In particular, the oxygen defects remain ionized even after illumination ceases, leading to persistent photoconductivity, which can limit the frame-rate of active matrix imaging arrays. However, the persistence in photoconductivity can be overcome through deployment of a gate pulsing scheme enabling realistic frame rates for advanced applications such as sensor-embedded display for touch-free interaction.