Theory of high-power mode-locked lasers with a slow absorber

We develop an analytical theory of high-power passively mode-locked lasers with a slow absorber; the theory is valid at pulse energies well exceeding the saturation energy. We analyze the Haus modelocking master equation in the pulse-energy-domain representation, approximating the intensity profile function by a series in the vicinity of its peak value. We consider the high-power operation regime of subpicosecond blue-violet GaN mode-locked diode lasers, using the approach developed. © 2010 Springer Science+Business Media, Inc.

Semiconductor laser with a biconical waveguide

The propagation losses in the fundamental mode of a bicone made of highly reflecting metal or a dielectric of large refraction were approximately estimated using Leontovich's boundary condition. A 400-fold concentration of the energy flux density lias been obtained in a cross section which is much smaller than λ. Here, the losses are 2.5% at λ = 550 nm in an Ag bicone and 12% in a semiconductor bicone with a band gap of ≈1 eV for hv larger than the band gap. The excitation efficiency of a bicone has been estimated. While not too large, it can be increased significantly using the method proposed in the present paper. The application of the optical bicone for the multiplication of a semiconductor-laser frequency is discussed. The results obtained are also of use in scanning near-field optical microscopy and in experiments on focusing laser pulses of ultrahigh power. © 2000 Plenum/Kluwer Publishing Corporation.

Phase-conjugation broad area twin-contact semiconductor laser

Experimental demonstration of lasing in a broad area twin-contact semiconductor laser which operates as a phase-conjugation (PC) mirror in an external cavity configuration is reported. This allows "self-aligned" and self-pumped spatially nondegenerate four-wave mixing to be achieved without the need for external optical signals. The external cavity laser system is very insensitive to tilt misalignments of the external mirror in the PC regime and exhibits very good mechanical stability. The resonant frequency of the external cavity lies in the GHz range which corresponds to a subnanosecond time response of phase conjugation processes in the semiconductor laser. © 1997 American Institute of Physics.

Ultrashort pulse generation in diode lasers

The basic ideas and current state of the art of ultrashort pulse generation by injection lasers are reviewed. All developed techniques, including gain switching, Q-switching, and mode-locking are described and compared. A simple theoretical treatment of a diode laser which emits picosecond light pulses is discussed. Some fundamental limits of the pulse parameters are discussed. Finally, compression of chirped optical pulses by optical fibres and the soliton effect is considered. © 1992 Chapman & Hall.

Characteristics of the spectral dynamics of picosecond modulated AlGaAs/GaAs injection lasers

Breakdown of the optical spectrum of a train of picosecond pulses into components with a distance which exceeds kT (200 cm-1 at λ = 955 nm and T = 300 K) is discovered for the first time in an injection laser. The effect may be caused by combined interaction between photons and phonons, with collective excitations in the degraded electron-hole GaAs plasma, and with the stream of drifting carriers in the active medium of the laser.

Adaptive holographic pumping of thin-film organic lasers

In this Letter, we use a reconfigurable hologram to dynamically control the position of incidence of the pump beam onto a liquid-crystal dye-based laser. The results show that there is an increase in the stability of the laser output with time and the average power when compared with the output of the same laser when it is optically excited using a static pump beam. This technique also provides additional functionality, such as wavelength tuning and spatial shaping of the pump beam, both of which are demonstrated here. © 2013 Optical Society of America.

Printed red-green-blue liquid crystal lasers

We present printable laser devices formed by dispersing dye-doped chiral nematic liquid crystals in solution-processible polymers. Unlike current technology, this allows lasers to be formed on a wide variety of surfaces, e.g. paper, plastic, metal. © OSA 2012.

Double-wall carbon nanotube Q-switched and mode-locked two-micron fiber lasers

We fabricate double-wall carbon nanotube polymer composite saturable absorbers and demonstrate stable Q-switched and Mode-locked Thulium fiber lasers in a linear cavity and a ring cavity respectively. © 2011 Optical Society of America.

Graphene passively Q-switched two-micron fiber lasers

We demonstrate a passively Q-switched thulium fiber laser, using a graphene-based saturable absorber. The laser is based on an all-fiber ring cavity and produces ~2.3 μs pulses at 1884nm, with a maximum pulse energy of 70 nJ. © 2011 Optical Society of America.

Graphene passively Q-switched two-micron fiber lasers

We demonstrate a passively Q-switched thulium fiber laser, using a graphene-based saturable absorber. The laser is based on an all-fiber ring cavity and produces ~2.3 μs pulses at 1884nm, with a maximum pulse energy of 70 nJ. © 2011 Optical Society of America.

Unified analytic model for current-voltage behavior in amorphous oxide semiconductor TFTs

We present a simple and semi-physical analytical description of the current-voltage characteristics of amorphous oxide semiconductor thin-film transistors in the above-threshold and sub-threshold regions. Both regions are described by single unified expression that employs the same set of model parameter values directly extracted from measured terminal characteristics. The model accurately reproduces measured characteristics of amorphous semiconductor thin film transistors in general, yielding a scatter of < 4%. © 1980-2012 IEEE.

Graphene passively Q-switched two-micron fiber lasers

We demonstrate a passively Q-switched thulium fiber laser, using a graphene-based saturable absorber. The laser is based on an all-fiber ring cavity and produces ~2.3 μs pulses at 1884nm, with a maximum pulse energy of 70 nJ. ©2011 Optical Society of America.