Integration of silicon plasmonic schottky photodetector for on chip signal tapping at telecom wavelengths

We experimentally demonstrate the use of an on-chip integrated Schottky plasmonic detector for testing, monitoring and tapping signals in plasmonic and photonic devices. Theoretical model and measurement of external and integrated devices will be presented. © OSA 2013.

Design optimization and experimental demonstration of low VπL carrier-depletion silicon mach-zehnder modulator

We design, optimize and demonstrate a highly efficient carrier-depletion silicon Mach-Zehnder modulator with very low VπL of ~0.2Vcm. Design consideration, fabrication process and experimental results will be presented. © OSA 2013.

Parabolic tapered photonic crystal cavity in silicon

We demonstrate the design, fabrication, transmission and nearfield characterization of a novel parabolic tapered 1D photonic crystal cavity in silicon. The design allows repeatable device fabrication, high quality factor and small modal volume. © 2012 OSA.

Silicon-metal waveguide as a high efficiency Schottky detector for telecom wavelengths

We demonstrate an integrated on-chip compact and high efficiency Schottky detector for telecom wavelengths based on silicon metal waveguide. Detection is based on the internal photoemission process. Theory and experimental results are discussed. © 2012 OSA.

Silicon optical phase shifter based on strain induced by a piezoelectric PZT thin film

We demonstrate a silicon optical phase shifter based on photoelastic effect controlled by a piezoelectric thin film. The hysteresis behavior of the piezoelectric response shows potential application as bistable device independent of the optical intensity. © 2012 OSA.

Parabolic tapered photonic crystal cavity in silicon

We demonstrate the design, fabrication, transmission and nearfield characterization of a novel parabolic tapered 1D photonic crystal cavity in silicon. The design allows repeatable device fabrication, high quality factor and small modal volume. © OSA 2012.

Silicon optical phase shifter based on strain induced by a piezoelectric PZT thin film

We demonstrate a silicon optical phase shifter based on photoelastic effect controlled by a piezoelectric thin film. The hysteresis behavior of the piezoelectric response shows potential application as bistable device independent of the optical intensity. © OSA 2012.

Parabolic tapered photonic crystal cavity in silicon

We demonstrate the design, fabrication, transmission and nearfield characterization of a novel parabolic tapered 1D photonic crystal cavity in silicon. The design allows repeatable device fabrication, high quality factor and small modal volume. © 2012 OSA.

On chip plasmonic enhanced silicon Schottky detector for telecom wavelengths

We demonstrate an integrated on-chip plasmonic enhanced Schottky detector for telecom wavelengths based on the internal photoemission process. This CMOS compatible device may serve as a promising alternative to the Si-Ge detectors. © 2012 OSA.

Bistability in silicon microring resonator based on strain induced by a piezoelectric lead zirconate titanate thin film

We demonstrate bistability in a submicron silicon optical phase shifter based on the photoelastic effect. The strain magnitude is electrically controlled by a piezoelectric thin film placed on top of the device. The hysteresis behavior of the piezoelectric response shows potential application as bistable device independent of the optical intensity. © 2012 American Institute of Physics.

Parabolic tapered photonic crystal cavity in silicon

We demonstrate the design, fabrication, transmission spectrum measurement, and near-field characterization of a parabolic tapered one-dimensional photonic crystal cavity in silicon. The results shows a relatively high quality factor (∼43 000), together with a small modal volume of ∼ 1. 1 (λ/n) 3. Moreover, the design allows repeatable device fabrication, as evident by the similar characteristics obtained for several tens of devices that were fabricated and tested. These demonstrated 1D PhC cavities may be used as a building block in integrated photonic circuits for optical on-chip interconnects and sensing applications. © 2012 American Institute of Physics.

Locally-oxidized silicon surface-plasmon Schottky detector for telecom wavelengths

We demonstrate an integrated on-chip locally-oxidized silicon surface-plasmon Schottky detector for telecom wavelengths based on the internal photoemission process. Theoretical model and experimental results will be presented and discussed. © 2011 IEEE.

Experimental demonstration of locally oxidized hybrid silicon-plasmonic waveguide

We demonstrate self-aligned approach for fabrication of hybrid silicon plasmonic waveguide. The demonstrated structure provides both nanoscale confinement together with propagation length of 100 microns. Near-field measurements of propagation and coupling loss are also presented. © 2011 OSA.

Locally oxidized silicon surface-plasmon Schottky detector for telecom regime

We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip. © 2011 American Chemical Society.

Experimental demonstration of locally oxidized hybrid silicon-plasmonic waveguide

We experimentally demonstrate a self-aligned approach for the fabrication of nanoscale hybrid silicon-plasmonic waveguide fabricated by local oxidation of silicon (LOCOS). Implementation of the LOCOS technique provides compatibility with standard complementary metal-oxide-semiconductor technology and allows avoiding lateral misalignment between the silicon waveguide and the upper metallic layer. We directly measured the propagation and the coupling loss of the fabricated hybrid waveguide using a near-field scanning optical microscope. The demonstrated structure provides nanoscale confinement of light together with a reasonable propagation length of ∼100 μm. As such, it is expected to become an important building block in future on-chip optoelectronic circuitry. © 2010 American Institute of Physics.