Transient electrothermal simulation of power semiconductor devices

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature.© 2010 IEEE.

The influence of particle shape on the stress-strain and creep response of a fine silica sand

The influence of particle shape on the stress-strain response of fine silica sand is investigated experimentally. Two sands from the same source and with the same particle size distribution were examined using Fourier descriptor analysis for particle shape. Their grains were, on average, found to have similar angularity but different elongation. During triaxial stress path testing, the stress-strain behavior of the sands for both loading and creep stages were found to be influenced by particle elongation. In particular, the behavior of the sand with less elongated grains was more like that of rounded glass beads during creep. The results highlight the role of particle shape in stress transmission in granular packings and suggest that shape should be taken more rigorously into consideration in characterizing geomaterials. © 2005 Taylor & Francis Group.

Femtosecond superradiant emission in AlGaInAs quantum-well semiconductor laser structures.

Ultrashort superradiant pulse generation from a 1580 nm AlGaInAs multiple quantum-well (MQW) semiconductor structure has been experimentally demonstrated for the first time. Superradiance is confirmed by analyzing the evolution of the optical temporal waveforms and spectra. Superradiant trends and regimes are studied as a function of driving condition. An optical pulse train is obtained at 1580 nm wavelength, with pulse durations as short as 390 fs and pulse peak powers of 7.2 W.

Complementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication

We have for the first time developed a self-aligned metal catalyst formation process using fully CMOS (complementary metal-oxide-semiconductor) compatible materials and techniques, for the synthesis of aligned carbon nanotubes (CNTs). By employing an electrically conductive cobalt disilicide (CoSi 2) layer as the starting material, a reactive ion etch (RIE) treatment and a hydrogen reduction step are used to transform the CoSi 2 surface into cobalt (Co) nanoparticles that are active to catalyze aligned CNT growth. Ohmic contacts between the conductive substrate and the CNTs are obtained. The process developed in this study can be applied to form metal nanoparticles in regions that cannot be patterned using conventional catalyst deposition methods, for example at the bottom of deep holes or on vertical surfaces. This catalyst formation method is crucially important for the fabrication of vertical and horizontal interconnect devices based on CNTs. © 2012 American Institute of Physics.

Stress-strain response of hydrate-bearing sands: Numerical study using discrete element method simulations

Gas hydrate is a crystalline solid found within marine and subpermafrost sediments. While the presence of hydrates can have a profound effect on sediment properties, the stress-strain behavior of hydrate-bearing sediments is poorly understood due to inherent limitations in laboratory testing. In this study, we use numerical simulations to improve our understanding of the mechanical behavior of hydrate-bearing sands. The hydrate mass is simulated as either small randomly distributed bonded grains or as "ripened hydrate" forming patchy saturation, whereby sediment clusters with 100% pore-filled hydrate saturation are distributed within a hydrate-free sediment. Simulation results reveal that reduced sand porosity and higher hydrate saturation cause an increase in stiffness, strength, and dilative tendency, and the critical state line shifts toward higher void ratio and higher shear strength. In particular, the critical state friction angle increases in sands with patchy saturation, while the apparent cohesion is affected the most when the hydrate mass is distributed in pores. Sediments with patchy hydrate distribution exhibit a slightly lower strength than sediments with randomly distributed hydrate. Finally, hydrate dissociation under drained conditions leads to volume contraction and/or stress relaxation, and pronounced shear strains can develop if the hydrate-bearing sand is subjected to deviatoric loading during dissociation.

An examination of strain space versus stress space for the formulation of elastoplastic constitutive models

Several elastoplastic soil models have been proposed over the years that are formulated in strain space rather than stress space due to certain analytical and computational advantages. One such model, BRICK (Simpson 1992), has been continuously utilized and developed for industrial applications within Arup Geotechnics for more than two decades. This paper aims to describe the advantages and difficulties associated with strain space modeling. In addition, it will show how recent advances in modeling the effects of stress history, stiffness anisotropy, strength anisotropy and time-dependence in conventional stress space models can be transferred to the BRICK model. © 2010 Taylor & Francis Group, London.

Gain-enhanced optical coherence in a high optical gain semiconductor

The propagation of ultrashort pulses in a traveling wave semiconductor amplifier is considered. It is demonstrated that the effective polarization relaxation time, which determines the coherence of the interaction of pulses within the medium, strongly depends on its optical gain. As a result, it is shown that at large optical gains the coherence time can exceed the transverse relaxation time T2 by an order of magnitude, this accounting for the strong femtosecond superradiant pulse generation commonly observed in semiconductor laser structures. © 2012 Elsevier B.V. All rights reserved.

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

The composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed, which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays. © 2012 Macmillan Publishers Limited. All rights reserved.

Temperature dependent electron transport in amorphous oxide semiconductor thin film transistors

A temperature-dependent mobility model in amorphous oxide semiconductor (AOS) thin film transistors (TFTs) extracted from measurements of source-drain terminal currents at different gate voltages and temperatures is presented. At low gate voltages, trap-limited conduction prevails for a broad range of temperatures, whereas variable range hopping becomes dominant at lower temperatures. At high gate voltages and for all temperatures, percolation conduction comes into the picture. In all cases, the temperature-dependent mobility model obeys a universal power law as a function of gate voltage. © 2011 IEEE.

Rapid Electron Beam Reacted Tantalum/Titanium Bilayers on Silicon : Semiconductors and Semiconductor Devices

The electrical and structural characteristics of tantalum-titanium bilayers on silicon reacted by electron beam heating have been investigated over a wide range of temperature and time conditions. The reacted layers exhibit low sheet resistance and stable electrical characteristics up to at least 1100℃. Titanium starts reacting from 750℃ onwards for 100 milliseconds reaction times whereas tantalum starts reacting only above 900℃ for such short reaction times. RBS results confirm that silicon is the major diffusing species and there is no evidence for the formation of ternary silicides. Reactions have also been explored on millisecond time scales by non-isothermal heating.