Amorphous silicon display backplanes on plastic substrates

Amorphous silicon thin-film transistors and pixel driver circuits for organic light-emitting diode displays have been fabricated on plastic substrates. Pixel circuits demonstrate sufficient current delivery and long-term stable operation. © 2005 IEEE.

High mobility N-channel and P-channel nanocrystalline silicon thin-film transistors

We report high hole and electron mobilities in nanocrystalline silicon (nc-Si:H) top-gate staggered thin-film transistors (TFTs) fabricated by direct plasma-enhanced chemical vapor deposition (PECVD) at 260°C. The n-channel nc-Si:H TFT with n+ nc-Si:H ohmic contacts shows a field-effect electron mobility (μnFE) of 130 cm2/Vs, which increases to 150 cm2/Vs with Cr-silicide contacts, along with a field-effect hole mobility (μhFE) of 25 cm2/Vs. To the best of our knowledge, the hole and electron mobilities reported here are the highest achieved to date using direct PECVD. © 2005 IEEE.

Enhanced reflection from arrays of silicon based inverted nanocones

We report enhanced reflection displayed by arrays of silicon based inverted nanocones. Theoretical studies suggest that such arrays display enhanced reflection and photonic band gaps within the optical and near infrared regions. Measured results show three to four fold enhancement in reflection and agree well with calculations. Such arrays can be used to enhance infrared reflection in photovoltaic devices which mostly contribute towards heating. © 2011 American Institute of Physics.

Photo-assisted hydrosilylation of silicon nanoparticles: Dependence of particle size on grafting chemistry

Silicon nanoparticles between 2.5 nm and 30 nm in diameter were functionalized by means of photoassisted hydrosilylation reactions in the aerosol phase with terminal alkenes of varying chain length. Using infrared spectroscopy and nuclear magnetic resonance, the chemical composition of the alkyl layer was determined for each combination of particle size and alkyl chain length. The spectroscopic techniques were used to determine that smaller particles functionalized with short chains in the aerosol phase tend to attach to the interior (β) alkenyl carbon atom, whereas particles >10 nm in diameter exhibit attachment primarily with the exterior (α) alkenyl carbon atom, regardless of chain length. © 2011 American Chemical Society.

Metal-polymer composite sensors for volatile organic compounds: Part 1. Flow-through chemi-resistors

A new type of chemi-resistor based on a novel metal-polymer composite is described. The composite contains nickel particles with sharp nano-scale surface features, which are intimately coated by the polymer matrix so that they do not come into direct physical contact. No conductive chains of filler particles are formed even at loadings above the percolation threshold and the composite is intrinsically insulating. However, when subjected to compression the composite becomes conductive, with sample resistance falling from ≥ 1012 Ω to < 0.01 Ω. The composite can be formed into insulating granules, which display similar properties to the bulk form. A bed of granules compressed between permeable frits provides a porous structure with a start resistance set by the degree of compression while the granules are free to swell when exposed to volatile organic compounds (VOCs). The granular bed presents a large surface area for the adsorption of VOCs from the gas stream flowing through it. The response of this system to a variety of vapours has been studied for two different sizes of the granular bed and for different matrix polymers. Large responses, ΔR/R0 ≥ 10^7, are observed when saturated vapours are passed through the chemi-resistor. Rapid response allows real time sensing of VOCs and the initial state is recovered in a few seconds by purging with an inert gas stream. The variation in response as a function of VOC concentration is determined.

Comparative switching behaviour of silicon transistors and practical silicon carbide transistors

The motivation for our work is to identify a space for silicon carbide (SiC) devices in the silicon (Si) world. This paper presents a detailed experimental investigation of the switching behaviour of silicon and silicon carbide transistors (a JFET and a cascode device comprising a Si-MOSFET and a SiC-JFET). The experimental method is based on a clamped inductive load chopper circuit that puts considerable stress on the device and increases the transient power dissipation. A precise comparison of switching behaviour of Si and SiC devices on similar terms is the novelty of our work. The cascode is found to be an attractive fast switching device, capable of operating in two different configurations whose switching equivalent circuits are proposed here. The effect of limited dv/dt of the Si-MOSFET on the switching of the SiC-JFET in a cascode is also critically analysed.

Parameter extraction and calorimetric validation for a silicon carbide jfet pspice model

This paper focuses on the PSpice model of SiC-JFET element inside a SiCED cascode device. The device model parameters are extracted from the I-V and C-V characterization curves. In order to validate the model, an inductive test rig circuit is designed and tested. The switching loss is estimated both using oscilloscope and calorimeter. These results are found to be in good agreement with the simulated results.