Derivative Kernels for Noise Robust ASR

Recently there has been interest in combined gen- erative/discriminative classifiers. In these classifiers features for the discriminative models are derived from generative kernels. One advantage of using generative kernels is that systematic approaches exist how to introduce complex dependencies beyond conditional independence assumptions. Furthermore, by using generative kernels model-based compensation/adaptation tech- niques can be applied to make discriminative models robust to noise/speaker conditions. This paper extends previous work with combined generative/discriminative classifiers in several directions. First, it introduces derivative kernels based on context- dependent generative models. Second, it describes how derivative kernels can be incorporated in continuous discriminative models. Third, it addresses the issues associated with large number of classes and parameters when context-dependent models and high- dimensional features of derivative kernels are used. The approach is evaluated on two noise-corrupted tasks: small vocabulary AURORA 2 and medium-to-large vocabulary AURORA 4 task.

Derivative kernels for noise robust ASR

Recently there has been interest in combining generative and discriminative classifiers. In these classifiers features for the discriminative models are derived from the generative kernels. One advantage of using generative kernels is that systematic approaches exist to introduce complex dependencies into the feature-space. Furthermore, as the features are based on generative models standard model-based compensation and adaptation techniques can be applied to make discriminative models robust to noise and speaker conditions. This paper extends previous work in this framework in several directions. First, it introduces derivative kernels based on context-dependent generative models. Second, it describes how derivative kernels can be incorporated in structured discriminative models. Third, it addresses the issues associated with large number of classes and parameters when context-dependent models and high-dimensional feature-spaces of derivative kernels are used. The approach is evaluated on two noise-corrupted tasks: small vocabulary AURORA 2 and medium-to-large vocabulary AURORA 4 task. © 2011 IEEE.

Laboratory measurement of strength mobilisation in kaolin: Link to stress history

This letter presents data from triaxial tests conducted as part of a research programme into the stress-strain behaviour of clays and silts at Cambridge University. To support findings from earlier research using databases of soil tests, eighteen CIU triaxial tests on speswhite kaolin were performed to confirm an assumed link between mobilisation strain (γ M=2) and overconsolidation ratio (OCR). In the moderate shear stress range (0.2c u to 0.8c u) the test data are essentially linear on log-log plots. Both the slopes and intercepts of these lines are simple functions of OCR.

Temperature dependent electron transport in amorphous oxide semiconductor thin film transistors

A temperature-dependent mobility model in amorphous oxide semiconductor (AOS) thin film transistors (TFTs) extracted from measurements of source-drain terminal currents at different gate voltages and temperatures is presented. At low gate voltages, trap-limited conduction prevails for a broad range of temperatures, whereas variable range hopping becomes dominant at lower temperatures. At high gate voltages and for all temperatures, percolation conduction comes into the picture. In all cases, the temperature-dependent mobility model obeys a universal power law as a function of gate voltage. © 2011 IEEE.

Photovoltaic measurements in carbon nanotube - Amorphous silicon core/shell nanowire

Carbon nanotube is one of the promising materials for exploring new concepts in solar energy conversion and photon detection. Here, we report the first experimental realization of a single core/shell nanowire photovoltaic device (2-4μm) based on carbon nanotube and amorphous silicon. Specifically, a multi-walled carbon nanotube (MWNTs) was utilized as the metallic core, on which n-type and intrinsic amorphous silicon layers were coated. A Schottky junction was formed by sputtering a transparent conducting indium-tin-oxide layer to wrap the outer shell of the device. The single coaxial nanowire device showed typical diode ratifying properties with turn-on voltage around 1V and a rectification ratio of 104 when biased at ±2V. Under illumination, it gave an open circuit voltage of ∼0.26V. Our study has shown a simple and useful platform for gaining insight into nanowire charge transport and collection properties. Fundamental studies of such nanowire device are important for improving the efficiency of future nanowire solar cells or photo detectors. © 2012 IEEE.

Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si

The fluorine redistribution during partial solid-phase-epitaxial-regrowth at 650°C of a preamorphized Si substrate implanted by F was investigated by atom probe tomography (APT), transmission electron microscopy, and secondary ions mass spectrometry. Three-dimensional spatial distribution of F obtained by APT provides a direct observation of F-rich clusters with a diameter of less than 1.5 nm. Density variation compatible with cavities and F-rich molecular ions in correspondence of clusters are in accordance with cavities filled by SiF 4 molecules. Their presence only in crystalline Si while they are not revealed by statistical analysis in amorphous suggests that they form at the amorphous/crystal interface. © 2012 American Institute of Physics.

Elastic properties of crystalline-amorphous core-shell silicon nanowires

The pressure behavior of Raman frequencies and line widths of crystalline core-amorphous shell silicon nanowires (SiNWs) with two different core-to-shell ratio thicknesses was studied at pressures up to 8 GPa. The obtained isothermal compressibility (bulk modulus) of SiNWs with a core-to-shell ratio of about 1.8 is ∼20% higher (lower) than reported values for bulk Si. For SiNWs with smaller core-to-shell ratios, a plastic deformation of the shell was observed together with a strain relaxation. A significant increase in the full width at half-maximum of the Raman LTO-peak due to phonon decay was used to determine the critical pressure at which LTO-phonons decay into LO + TA phonons. Our results reveal that this critical pressure in strained core-shell SiNWs (∼4 GPa) is different from the reported value for bulk Si (∼7 GPa), whereas no change is observed for relaxed core-shell SiNWs. © 2013 American Chemical Society.