Study of the turbulence in the air-side and water-side boundary layers in experimental laboratory wind induced surface waves

This study detailed the structure of turbulence in the air-side and water-side boundary layers in wind-induced surface waves. Inside the air boundary layer, the kurtosis is always greater than 3 (the value for normal distribution) for both horizontal and vertical velocity fluctuations. The skewness for the horizontal velocity is negative, but the skewness for the vertical velocity is always positive. On the water side, the kurtosis is always greater than 3, and the skewness is slightly negative for the horizontal velocity and slightly positive for the vertical velocity. The statistics of the angle between the instantaneous vertical fluctuation and the instantaneous horizontal velocity in the air is similar to those obtained over solid walls. Measurements in water show a large variance, and the peak is biased towards negative angles. In the quadrant analysis, the contribution of quadrants Q2 and Q4 is dominant on both the air side and the water side. The non-dimensional relative contributions and the concentration match fairly well near the interface. Sweeps in the air side (belonging to quadrant Q4) act directly on the interface and exert pressure fluctuations, which, in addition to the tangential stress and form drag, lead to the growth of the waves. The water drops detached from the crest and accelerated by the wind can play a major role in transferring momentum and in enhancing the turbulence level in the water side.On the air side, the Reynolds stress tensor's principal axes are not collinear with the strain rate tensor, and show an angle α σ≈=-20°to-25°. On the water side, the angle is α σ≈=-40°to-45°. The ratio between the maximum and the minimum principal stresses is σ a/σ b=3to4 on the air side, and σ a/σ b=1.5to3 on the water side. In this respect, the air-side flow behaves like a classical boundary layer on a solid wall, while the water-side flow resembles a wake. The frequency of bursting on the water side increases significantly along the flow, which can be attributed to micro-breaking effects - expected to be more frequent at larger fetches. © 2012 Elsevier B.V.

Indirect modulation of a terahertz quantum cascade laser using gate tunable graphene

We bring together two areas of terahertz (THz) technology that have benefited from recent advancements in research, i.e., graphene, a material that has plasmonic resonances in the THz frequency, and quantum cascade lasers (QCLs), a compact electrically driven unipolar source of THz radiation. We demonstrate the use of single-layer large-area graphene to indirectly modulate a THz QCL operating at 2.0 THz. By tuning the Fermi level of the graphene via a capacitively coupled backgate voltage, the optical conductivity and, hence, the THz transmission can be varied. We show that, by changing the pulsing frequency of the backgate, the THz transmission can be altered. We also show that, by varying the pulsing frequency of the backgate from tens of Hz to a few kHz, the amplitude-modulated THz signal can be switched by 15% from a low state to a high state. © 2009-2012 IEEE.

Coexistence of high-bit-rate quantum key distribution and data on optical fiber

Quantum key distribution (QKD) uniquely allows distribution of cryptographic keys with security verified by quantum mechanical limits. Both protocol execution and subsequent applications require the assistance of classical data communication channels. While using separate fibers is one option, it is economically more viable if data and quantum signals are simultaneously transmitted through a single fiber. However, noise-photon contamination arising from the intense data signal has severely restricted both the QKD distances and secure key rates. Here, we exploit a novel temporal-filtering effect for noise-photon rejection. This allows high-bit-rate QKD over fibers up to 90 km in length and populated with error-free bidirectional Gb/s data communications. With high-bit rate and range sufficient for important information infrastructures, such as smart cities and 10 Gbit Ethernet, QKD is a significant step closer towards wide-scale deployment in fiber networks.

Geometry and interaction of structures in homogeneous isotropic turbulence

A strategy to extract turbulence structures from direct numerical simulation (DNS) data is described along with a systematic analysis of geometry and spatial distribution of the educed structures. A DNS dataset of decaying homogeneous isotropic turbulence at Reynolds number Reλ = 141 is considered. A bandpass filtering procedure is shown to be effective in extracting enstrophy and dissipation structures with their smallest scales matching the filter width, L. The geometry of these educed structures is characterized and classified through the use of two non-dimensional quantities, planarity' and filamentarity', obtained using the Minkowski functionals. The planarity increases gradually by a small amount as L is decreased, and its narrow variation suggests a nearly circular cross-section for the educed structures. The filamentarity increases significantly as L decreases demonstrating that the educed structures become progressively more tubular. An analysis of the preferential alignment between the filtered strain and vorticity fields reveals that vortical structures of a given scale L are most likely to align with the largest extensional strain at a scale 3-5 times larger than L. This is consistent with the classical energy cascade picture, in which vortices of a given scale are stretched by and absorb energy from structures of a somewhat larger scale. The spatial distribution of the educed structures shows that the enstrophy structures at the 5η scale (where η is the Kolmogorov scale) are more concentrated near the ones that are 3-5 times larger, which gives further support to the classical picture. Finally, it is shown by analysing the volume fraction of the educed enstrophy structures that there is a tendency for them to cluster around a larger structure or clusters of larger structures. Copyright © 2012 Cambridge University Press.

Multiplexed classical and quantum transmission for high bitrate quantum key distribution systems

We report the operation of a gigahertz clocked quantum key distribution system, with two classical data communication channels using coarse wavelength division multiplexing over a record fibre distance of 80km. © 2012 OSA.

Properties of trench defects in InGaN/GaN quantum well structures

The structural and optical properties of trench defects, which are poorly understood yet commonly occurring defects observed on the surfaces of InGaN multiple quantum wells (MQW), are reported. These defects comprise near-circular trenches which enclose areas of MQW which give rise to a red shift in peak photoluminescence emission and a change in cathodoluminescence intensity with respect to the surrounding material. Atomic force microscopy shows that the height of trench-enclosed areas differs from that of the surrounding quantum well structure, and that trenches are unrelated to the commonly observed V-defects in InGaN films, despite being occasionally intersected by them. Cross-sectional electron microscopy analysis of trenches with raised centres suggests that the red shift in the observed cathodoluminescence peak emission may be due to the quantum wells being thicker in the trench-enclosed regions than in the surrounding quantum well area. The mechanism of trench formation and its implication for the control of the emission properties of light-emitting diodes is discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Gaussian Approximation Potential: an interatomic potential derived from first principles Quantum Mechanics

Simulation of materials at the atomistic level is an important tool in studying microscopic structure and processes. The atomic interactions necessary for the simulation are correctly described by Quantum Mechanics. However, the computational resources required to solve the quantum mechanical equations limits the use of Quantum Mechanics at most to a few hundreds of atoms and only to a small fraction of the available configurational space. This thesis presents the results of my research on the development of a new interatomic potential generation scheme, which we refer to as Gaussian Approximation Potentials. In our framework, the quantum mechanical potential energy surface is interpolated between a set of predetermined values at different points in atomic configurational space by a non-linear, non-parametric regression method, the Gaussian Process. To perform the fitting, we represent the atomic environments by the bispectrum, which is invariant to permutations of the atoms in the neighbourhood and to global rotations. The result is a general scheme, that allows one to generate interatomic potentials based on arbitrary quantum mechanical data. We built a series of Gaussian Approximation Potentials using data obtained from Density Functional Theory and tested the capabilities of the method. We showed that our models reproduce the quantum mechanical potential energy surface remarkably well for the group IV semiconductors, iron and gallium nitride. Our potentials, while maintaining quantum mechanical accuracy, are several orders of magnitude faster than Quantum Mechanical methods.

Light absorption in silicon quantum dots embedded in silica

The photon absorption in Si quantum dots (QDs) embedded in SiO2 has been systematically investigated by varying several parameters of the QD synthesis. Plasma-enhanced chemical vapor deposition (PECVD) or magnetron cosputtering (MS) have been used to deposit, upon quartz substrates, single layer, or multilayer structures of Si-rich- SiO2 (SRO) with different Si content (43-46 at. %). SRO samples have been annealed for 1 h in the 450-1250 °C range and characterized by optical absorption measurements, photoluminescence analysis, Rutherford backscattering spectrometry and x-ray Photoelectron Spectroscopy. After annealing up to 900 °C SRO films grown by MS show a higher absorption coefficient and a lower optical bandgap (∼2.0 eV) in comparison with that of PECVD samples, due to the lower density of Si-Si bonds and to the presence of nitrogen in PECVD materials. By increasing the Si content a reduction in the optical bandgap has been recorded, pointing out the role of Si-Si bonds density in the absorption process in small amorphous Si QDs. Both the photon absorption probability and energy threshold in amorphous Si QDs are higher than in bulk amorphous Si, evidencing a quantum confinement effect. For temperatures higher than 900 °C both the materials show an increase in the optical bandgap due to the amorphous-crystalline transition of the Si QDs. Fixed the SRO stoichiometry, no difference in the optical bandgap trend of multilayer or single layer structures is evidenced. These data can be profitably used to better implement Si QDs for future PV technologies. © 2009 American Institute of Physics.

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Atomic force microscopy (AFM) and scanning electron microscopy (SEM) with cathodoluminescence (CL) were performed on exactly the same defects in a blue-emitting InGaN/GaN multiple quantum well (QW) sample enabling the direct correlation of the morphology of an individual defect with its emission properties. The defects in question are observed in AFM and SEM as a trench partially or fully enclosing a region of the QW having altered emission properties. Their sub-surface structure has previously been shown to consist of a basal plane stacking fault (BSF) in the plane of the QW stack, and a stacking mismatch boundary (SMB) which opens up into a trench at the sample surface. In CL, the material enclosed by the trench may emit more or less intensely than the surrounding material, but always exhibits a redshift relative to the surrounding material. A strong correlation exists between the width of the trench and both the redshift and the intensity ratio, with the widest trenches surrounding regions which exhibit the brightest and most redshifted emission. Based on studies of the evolution of the trench width with the number of QWs from four additional MQW samples, we conclude that in order for a trench defect to emit intense, strongly redshifted light, the BSF must be formed in the early stages of the growth of the QW stack. The data suggest that the SMB may act as a non-radiative recombination center. © 2013 American Institute of Physics.