Yielding of engineering polymers at strain rates of up to 500 s-1

A method is described for measuring the mechanical properties of polymers in compression at strain rates in the range approximately 300-500 s-1. A gravity-driven pendulum is used to load a specimen on the end of an instrumented Hopkinson output bar and the results are processed by a microcomputer. Stress-strain curves up to high strains are presented for polycarbonate, polyethersulphone and high density polyethylene over a range of temperatures. The value of yield stress, for all three polymers, was found to vary linearly with log (strain rate) at strain rates up to 500 s-1. © 1985.

Application of electron beams in thermal processing of semiconductor materials and devices

Rapid and effective thermal processing methods using electron beams are described in this paper. Heating times ranging from a fraction of a second to several seconds and temperatures up to 1400°C are attainable. Applications such as the annealing of ion implanted material, both without significant dopant diffusion and with highly controlled diffusion of impurities, are described. The technique has been used successfully to activate source/drain regions for fine geometry NMOS transistors. It is shown that electron beams can produce localised heating of semiconductor substrates and a resolution of approximately 1 μm has been achieved. Electron beam heating has been applied to improving the crystalline quality of silicon-on sapphire used in CMOS device fabrication. Silicon layers with defect levels approaching bulk material have been obtained. Finally, the combination of isothermal and selective annealing is shown to have application in recrystallisation of polysilicon films on an insulating layer. The approach provides the opportunity of producing a silicon-on-insulator substrate with improved crystalline quality compared to silicon-on-sapphire at a potentially lower cost. It is suggested that rapid heating methods are expected to provide a real alternative to conventional furnace processing of semiconductor devices in the development of fabrication technology. © 1984 Benn electronics Publications Ltd, Luton.

First demonstration of two photon absorption in a semiconductor waveguide pumped by a diode laser

For the first time, lasers have been used to induce a fast all-optical nonresonant nonlinearity at wavelengths well beyond the band edge in a GaAs/GaAlAs multiquantum well waveguide. Using a Q-switched diode laser, which gave optical pulses of 3.5 ps duration and 7 W peak power, an intensity-dependent transmission was recorded that was consistent with the presence of two photon absorption in the waveguide. The measured two photon absorption coefficient was 11 ± 2cm/GW.

Optimization of semiconductor optical amplifiers for all optical wavelength conversion

In recent years a variety of experimental and theoretical work has been reported on the use of semiconductor optical amplifiers for high speed wavelength conversion. However little work has addressed the dynamic limitations of this conversion process in detail with a view to device optimization. In this paper, a detailed study of the conversion process is carried out in order to optimize device parameters and drive conditions for increased conversion speed and improved modulation index.