HYDROGENATED AMORPHOUS SILICON THIN-FILM DEPOSITION BY DIRECT PHOTO-ENHANCED DECOMPOSITION OF SILANE USING AN INTERNAL HYDROGEN DISCHARGE LAMP.

Hydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Angstrom/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.

SOME MEASUREMENTS OF THE PERMEABILITY OF KAOLIN.

This paper reports an experimental investigation of the vertical and horizontal permeabilities of speswhite kaolin clay. The permeabilities were measured using falling head permeability tests. A modification to a conventional oedometer was devised so that either vertical or horizontal permeabilities could be determined. It was found that the vertical and horizontal permeabilities of the clay slurry were similar, but that as the clay was consolidated one dimensionally the anisotropy of the clay fabric resulted in a greater horizontal permeability than the vertical permeability at any void ratio. Both permeabilities were uniquely related to the void ratio.

Some measurements of the permeability of kaolin

The writers wish to present some additional data obtained independently and with different techniques that confirm the results published in the paper. For these tests, the speswhite kaolin clay was prepared as a slurry with a water content of 133 percent and was then consolidated one-dimensionally under an axial stress of 100 kPa in a 203 mm dia. tube. The results presented here show that the anisotropy of permeability is completely preserved (even after the sample is compressed isotropical) as long as the initial part of the stress path corresponds to one-dimensional compression. The data supports the speculation by the authors regarding permeability anisotropy for stress paths other than one-dimensional compression.

Correlation between density of states distributions and the fermi level position in interfacial regions of amorphous silicon thin film transistors

This paper investigates the variation of the integrated density of states with conduction activation energy in hydrogenated amorphous silicon thin film transistors. Results are given for two different gate insulator layers, PECVD silicon oxide and thermally grown silicon dioxide. The different gate insulators produce transistors with very different initial transfer characteristics, but the variation of integrated density of states with conduction activation energy is shown to be similar.

Field emission from tetrahedrally bonded amorphous carbon

The field emission behaviour of a series of Tetrahedrally Bonded Amorphous Carbon (ta-C) films has been measured. The films were produced using a Filtered Cathodic Vacuum Arc System. The threshold field for emission and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical as-grown undoped ta-C films have a threshold field of order 10-15 V/μm and optimally nitrogen-doped films exhibit fields as low as 5 V/μm. The emission as a function of back contact and front surface condition has also been considered and shows that the back contact has only a minor effect on emission efficiency. However, after etching in either an oxygen or hydrogen plasma, the films show a marked reduction in threshold field, down to as low as 2-3 V/μm, and a marked improvement in emission site density.

Amorphous carbon for use in thin film transistors

Tetrahedrally bonded amorphous carbon (ta-C) is a new type of semiconducting thin film material. It can be produced at room temperature using the Filtered Cathodic Vacuum Arc technique. The as-grown undoped ta-C is p-type in nature but it can be n-doped by the addition of nitrogen during deposition. This paper will describe thin film transistor design and fabrication using ta-C as the active channel layer.

Tetrahedrally bonded amorphous carbon for field-emission displays

Field emission from a series of tetrahedrally bonded amorphous-carbon (ta-C) films, deposited in a filtered cathodic vacuum arc, has been measured. The threshold field for emission and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical as-grown undoped ta-C films have threshold fields of the order 10-15 V/μm and optimally nitrogen doped films exhibited fields as low as 5 V/μm. In order to gain further understanding of the mechanism of field emission, the films were also subjected to H2, Ar, and O2 plasma treatments and were also deposited onto substrates of different work function. The threshold field, emission current, emission site densities were all significantly improved by the plasma treatment, but little dependence of these properties on work function of the substrate was observed. This suggests that the main barrier to emission in these films is at the front surface.

Defect and disorder reduction by annealing in hydrogenated tetrahedral amorphous carbon

Hydrogenated tetrahedral amorphous carbon (ta-C:H) is a form of diamond-like carbon with a high sp3 content (>60%), grown here using a plasma beam source. Information on the behaviour of hydrogen upon annealing is obtained from effusion measurements, which show that hydrogen does not effuse significantly at temperatures less than 500 °C in films grown using methane and 700 °C in films grown using acetylene. Raman measurements show no significant structural changes at temperatures up to 300 °C. At higher temperatures, corresponding to the onset of effusion, the Raman spectra show a clustering of the sp2 phase. The density of states of ta-C:H is directly measured using scanning tunnelling spectroscopy. The measured gradients of the conduction and valence band tails increase up to 300 °C, confirming the occurrence of band tail sharpening. Examination of the photoluminescence background in the Raman spectra shows an increase in photoluminescence intensity with decreasing defect density, providing evidence that paramagnetic defects are the dominant non-radiative recombination centres in ta-C:H.

Bonding regimes of nitrogen in amorphous carbon

Nitrogen can have numerous effects on diamond-like carbon: it can dope, it can form the hypothetical superhard compound C3N4, or it can create fullerene-like bonding structures. We studied amorphous carbon nitrogen films deposited by a filtered cathodic vacuum arc as a function of nitrogen content, ion energy and deposition temperature. The incorporation of nitrogen from 10-2 to 10 at% was measured by secondary ion mass spectrometry and elastic recoil detection analysis and was found to vary slightly sublinearly with N2 partial pressure during deposition. In the doping regime from 0 to about 0.4% N, the conductivity changes while the sp3 content and optical gap remain constant. From 0.4 to approximately 10% N, existing sp2 sites condense into clusters and reduce the band gap. Nitrogen contents over 10% change the bonding from mainly sp3 to mainly sp2. Ion energies between 20 and 250 eV do not greatly modify this behaviour. Deposition at higher temperatures causes a sudden loss of sp3 bonding above about 150 °C. Raman spectroscopy and optical gap data show that existing sp2 sites begin to cluster below this temperature, and the clustering continues above this temperature. This transition is found to vary only weakly with nitrogen addition, for N contents below 10%.

Preparation of tetrahedral amorphous carbon films by filtered cathodic vacuum arc deposition

Tetrahedrally bonded amorphous carbon (ta-C) and nitrogen doped (ta-C:N) films were obtained at room temperature in a filtered cathodic vacuum arc (FCVA) system incorporating an off-plane double bend (S-bend) magnetic filter. The influence of the negative bias voltage applied to substrates (from -20 to -350 V) and the nitrogen background pressure (up to 10-3 Torr) on film properties was studied by scanning electron microscopy (SEM), electron energy loss spectroscopy (EELS), Raman spectroscopy, X-ray photoemission spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and X-ray reflectivity (XRR). The ta-C films showed sp3 fractions between 84% and 88%, and mass densities around 3.2 g/cm3 in the wide range of bias voltage studied. In contrast, the compressive stress showed a maximum value of 11 GPa for bias voltages around -90 V, whereas for lower and higher bias voltages the stress decreased to 6 GPa. As for the ta-C:N films grown at bias voltages below -200 V and with N contents up to 7%, it has been found that the N atoms were preferentially sp3 bonded to the carbon network with a reduction in stress below 8 GPa. Further increase in bias voltage or N content increased the sp2 fraction, leading to a reduction in film density to 2.7 g/cm3.

Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors

A systematic study has been made of the growth of both hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiN) by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). In the case of a-SiN, helium and nitrogen gas is injected into the system such that it passes through the resonance zone. These highly ionised gases provide sufficient energy to ionise the silane gas, which is injected further downstream. It is demonstrated that a gas phase reaction occurs between the silane and nitrogen species. It is control of the ratio of silane to nitrogen in the plasma which is critical for the production of stoichiometric a-SiN. Material has been produced at 80°C with a Si:N ratio of 1:1.3 a breakdown strength of ∼6 MV cm-1 and resistivity of > 1014 Ω cm. In the case of a-Si:H, helium and hydrogen gas is injected into the ECR zone and silane is injected downstream. It is shown that control of the gas phase reactions is critical in this process also. a-Si:H has been deposited at 80 °C with a dark conductivity of 10-11 Ω-1 cm-1 and a photosensitivity of justbelowl 4×104. Such materials are suitable for use in thin film transistors on plastic substrates.

Compositional analysis of thin film amorphous semiconductors and insulators using LIMA

LIMA (Laser-induced Ion Mass Analysis) is a new technique capable of compositional analysis of thin films and surface regions. Under UHV conditions a focused laser beam evaporates and ionizes a microvolume of specimen material from which a mass spectrum is obtained. LIMA has been used to examine a range of thin film materials with applications in electronic devices. The neutral photon probe avoids charging problems, and low conductivity materials are examined without prior metallization. Analyses of insulating silicon oxides, nitrides, and oxynitrides confirm estimates of composition from infrared measurements. However, the hydrogen content of hydrogenated amorphous silicon (a-Si : H) found by LIMA shows no correlation with values given by infrared absorption analysis. Explanations are proposed and discussed. © 1985.

PHOTOENHANCED DEPOSITION OF HYDROGENATED AMORPHOUS SILICON THIN FILMS.

This paper will review the different U. V. lamp photo-CVD (Chemical Vapor Deposition) techniques which have been utilized for the production of highly photoconductive hydrogenated amorphous silicon (a-Si:H) thin films. Most of these require the transmission of U. V. light through a window into the reaction vessel; leading to unwanted U. V. light absorption by the window and the a-Si:H film which tends to form on its inner surface. A deposition system developed in our laboratory will also be described, which circumvents these problems by incorporating a windowless discharge lamp into the reaction vessel.

Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors

Thin film transistors (TFTs) utilizing an hydrogenated amorphous silicon (a-Si:H) channel layer exhibit a shift in the threshold voltage with time under the application of a gate bias voltage due to the creation of metastable defects. These defects are removed by annealing the device with zero gate bias applied. The defect removal process can be characterized by a thermalization energy which is, in turn, dependent upon an attempt-to-escape frequency for defect removal. The threshold voltage of both hydrogenated and deuterated amorphous silicon (a-Si:D) TFTs has been measured as a function of annealing time and temperature. Using a molecular dynamics simulation of hydrogen and deuterium in a silicon network in the H2 * configuration, it is shown that the experimental results are consistent with an attempt-to-escape frequency of (4.4 ± 0.3) × 1013 Hz and (5.7 ± 0.3) × 1013 Hz for a-Si:H and a-Si:D respectively which is attributed to the oscillation of the Si-H and Si-D bonds. Using this approach, it becomes possible to describe defect removal in hydrogenated and deuterated material by the thermalization energies of (1.552 ± 0.003) eV and (1.559 ± 0.003) eV respectively. This correlates with the energy per atom of the Si-H and Si-D bonds. © 2006 Elsevier B.V. All rights reserved.

A new low-power highly linear mixer design using differential derivative superposition

This paper presents the analysis and design of a new low power and highly linear mixer topology based on a newly reported differential derivative superposition method. Volterra series and harmonic balance are employed to investigate its linearisation mechanism and to optimise the design. A prototype mixer has been designed and is being implemented in 0.18μm CMOS technology. Simulation shows this mixer achieves 19.7dBm IIP3 with 10.5dB conversion gain, 13.2dB noise figure at 2.4GHz and only 3.8mW power consumption. This performance is competitive with already reported mixers.