Measurement of filling-factor-dependent magnetophonon resonances in graphene using Raman spectroscopy

We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments. © 2013 American Physical Society.

Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm 2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth. © 2012 American Chemical Society.

Fast O2 measurement using modified UEGO sensors in the intake and exhaust of a diesel engine

Recent work has investigated the use of O2 concentration in the intake manifold as a control variable for diesel engines. It has been recognised as a very good indicator of NOX emissions especially during transient operation, however, much of the work is concentrated on estimating the O2 concentration as opposed to measuring it. This work investigates Universal Exhaust Gas Oxygen (UEGO) sensors and their potential to be used for such measurements. In previous work it was shown that these sensors can be operated in a controlled pressure environment such that their response time is of the order 10ms. In this paper, it is shown how the key causes of variation (and therefore potential sources of error) in sensor output, namely, pressure and temperature are largely mitigated by operating the sensors in such an environment. Experiments were undertaken on a representative light duty diesel engine using modified UEGO sensors in the intake and exhaust system. Results from other fast emissions measuring equipment are also shown and it is seen that the UEGO sensors are capable of giving an accurate measurement of O2 and EGR. Copyright © 2013 SAE International.

Continuous weak measurement of a trapped electron using a percolation field effect transistor

We investigate the use of a percolation-field-effect-transistor for the continuous weak measurement of a spatially Rabi oscillating trapped electron through the change in percolation pathway of the transistor channel. In contrast to conventional devices, this detection mechanism in principle does not require a change in the stored energy of the gate capacitance to modify the drain current, so reducing the measurement back-action. The signal-to-noise ratio and measurement bandwidth are seen to be improved compared to conventional devices, allowing further aspects of the dynamic behaviour to be observed. © 2013 AIP Publishing LLC.

Aeroacoustic source measurement methods for characterizing the sound generated by ducted flow devices with higher-order modes.

The International Organization for Standardization (ISO) method 5136 is widely used in industry and academia to determine the sound power radiated into a duct by fans and other flow devices. The method involves placing the device at the center of a long cylindrical duct with anechoic terminations at each end to eliminate reflections. A single off-axis microphone is used on the inlet and outlet sides that can theoretically capture the plane-wave mode amplitudes but this does not provide enough information to fully account for higher-order modes. In this study, the "two-port" source model is formulated to include higher-order modes and applied for the first three modes. This requires six independent surface pressure measurements on each side or "port." The resulting experimental set-up is much shorter than the ISO rig and does not require anechoic terminations. An array of six external loudspeaker sources is used to characterize the passive part of the two-port model and the set-up provides a framework to account for transmission of higher-order modes through a fan. The relative importance of the higher-order modes has been considered and their effect on inaccuracies when using the ISO method to find source sound power has been analyzed.

Measurement of third-order dispersion in a hong-ou-mandel interferometer

The effect of third-order dispersion in a Hong-Ou-Mandel interferometer is investigated using a ZnSe crystal as a dispersive medium. A value for the TOD coefficient of ZnSe is extracted which is consistent with literature values. © OSA 2013.

Measurement of Residual Stresses in Ferroelectric Pb(Zr

The residual stresses in Pb(Zr0.3Ti0.7)O3thin films were measured by the \sin^{2}\Psi method using the normal X-ray incidence. The spacing of different planes (hkl) parallel to the film surface were converted to the spacing of a set of inclined planes (100). The angles between (100) and (hkl) were equivalent to the tilting angles of (100) from the normal of film surface. The residual stresses were extracted from the linear slope of the strain difference between the equivalent inclined direction and normal direction with respect to the \sin^{2}\Psi. The results were in consistency with that derived from the conventional \sin^{2}\Psi method.

High resolution direct measurement of temperature distribution in silicon nanophotonics devices.

Following the miniaturization of photonic devices and the increase in data rates, the issues of self heating and heat removal in active nanophotonic devices should be considered and studied in more details. In this paper we use the approach of Scanning Thermal Microscopy (SThM) to obtain an image of the temperature field of a silicon micro ring resonator with sub-micron spatial resolution. The temperature rise in the device is a result of self heating which is caused by free carrier absorption in the doped silicon. The temperature is measured locally and directly using a temperature sensitive AFM probe. We show that this local temperature measurement is feasible in the photonic device despite the perturbation that is introduced by the probe. Using the above method we observed a significant self heating of about 10 degrees within the device.

Measurement of residual stresses in ferroelectric Pb(Zr 0.3Ti0.7)O3 thin films by X-ray diffraction

The residual stresses in Pb(Zr0.3Ti0.7)O3 thin films were measured by the sin2 Ψ method using the normal X-ray incidence. The spacing of different planes (hkl) parallel to the film surface were converted to the spacing of a set of inclined planes (100). The angles between (100) and (hkl) were equivalent to the tilting angles of (100) from the normal of film surface. The residual stresses were extracted from the linear slope of the strain difference between the equivalent inclined direction and normal direction with respect to the sin2 Ψ. The results were in consistency with that derived from the conventional sin2 Ψ method. © 2013 The Japan Society of Applied Physics.