Surface-waves, stability, and scattering for a lined duct with flow

We consider a straight cylindrical duct with a steady subsonic axial flow and a reacting boundary (e.g. an acoustic lining). The wave modes are separated into ordinary acoustic duct modes, and surface modes confined to a small neighbourhood of the boundary. Many researchers have used a mass-spring-damper boundary model, for which one surface mode has previously been identified as a convective instability; however, we show the stability analysis used in such cases to be questionable. We investigate instead the stability of the surface modes using the Briggs-Bers criterion for a Flügge thin-shell boundary model. For modest frequencies and wavenumbers the thin-shell has an impedance which is effectively that of a mass-spring-damper, although for the large wavenumbers needed for the stability analysis the thin-shell and mass-spring-damper impedances diverge, owing to the thin shell's bending stiffness. The thin shell model may therefore be viewed as a regularization of the mass-spring-damper model which accounts for nonlocally-reacting effects. We find all modes to be stable for realistic thin-shell parameters, while absolute instabilities are demonstrated for extremely thin boundary thicknesses. The limit of vanishing bending stiffness is found to be a singular limit, yielding absolute instabilities of arbitrarily large temporal growth rate. We propose that the problems with previous stability analyses are due to the neglect of something akin to bending stiffness in the boundary model. Our conclusion is that the surface mode previously identified as a convective instability may well be stable in reality. Finally, inspired by Rienstra's recent analysis, we investigate the scattering of an acoustic mode as it encounters a sudden change from a hard-wall to a thin-shell boundary, using a Wiener-Hopf technique. The thin-shell is considered to be clamped to the hard-wall. The acoustic mode is found to scatter into transmitted and reflected acoustic modes, and surface modes strongly linked to the solid waves in the boundary, although no longitudinal or transverse waves within the boundary are excited. Examples are provided that demonstrate total transmission, total reflection, and a combination of the two. This thin-shell scattering problem is preferable to the mass-spring-damper scattering problem presented by Rienstra, since the thin-shell problem is fully determined and does not need to appeal to a Kutta-like condition or the inclusion of an instability in order to avoid a surface-streamline cusp at the boundary change.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon

A comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon (ta-C) on Si has been carried out. Complete stress relief occurs at 600-700°C and is accompanied by minimal structural modifications, as indicated by electron energy loss spectroscopy, Raman spectroscopy, and optical gap measurements. Further annealing in vacuum converts sp3 sites to sp2 with a drastic change occurring after 1100°C. The field emitting behavior is substantially retained up to the complete stress relief, confirming that ta-C is a robust emitting material. © 1999 American Institute of Physics.

A resonant micromachined electrostatic charge sensor

A micromachined electrometer, based on the concept of a variable capacitor, has been designed, modeled, fabricated, and tested. The device presented in this paper functions as a modulated variable capacitor, wherein a dc charge to be measured is up-modulated and converted to an ac voltage output, thus improving the signal-to-noise ratio. The device was fabricated in a commercial standard SOI micromachining process without the need for any additional processing steps. The electrometer was tested in both air and vacuum at room temperature. In air, it has a charge-to-voltage conversion gain of 2.06 nV/e, and a measured charge noise floor of 52.4 e/rtHz. To reduce the effects of input leakage current, an electrically isolated capacitor has been introduced between the variable capacitor and input to sensor electronics. Methods to improve the sensitivity and resolution are suggested while the long-term stability of these sensors is modeled and discussed. © 2006 IEEE.

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.