Beyond niche thinking: Market selection in science-based ventures

Matching a new technology to an appropriate market is a major challenge for new technology-based firms (NTBF). Such firms are often advised to target niche-markets where the firms and their technologies can establish themselves relatively free of incumbent competition. However, technologies are diverse in nature and do not benefit from identical strategies. In contrast to many Information and Communication Technology (ICT) innovations which build on an established knowledge base for fairly specific applications, technologies based on emerging science are often generic and so have a number of markets and applications open to them, each carrying considerable technological and market uncertainty. Each of these potential markets is part of a complex and evolving ecosystem from which the venture may have to access significant complementary assets in order to create and sustain commercial value. Based on dataset and case study research on UK advanced material university spin-outs (USO), we find that, contrary to conventional wisdom, the more commercially successful ventures were targeting mainstream markets by working closely with large, established competitors during early development. While niche markets promise protection from incumbent firms, science-based innovations, such as new materials, often require the presence, and participation, of established companies in order to create value. © 2012 IEEE.

Metamaterial filter for the near-visible spectrum

We demonstrate metamaterials operating in the near-visible regime based on two-dimensional arrays of gold-coated silicon nanopillars. The nanopillar arrays demonstrate a cutoff response at the metamaterial plasma frequency in accordance with theory and can be utilized for filtering applications. A plasma frequency in the near visible region of λ = 1 μm is calculated numerically for an array with a lattice constant of 300 nm and wire radius of 50 nm, with reflection measurements in agreement with numerical calculations. Such structures can be utilized for achieving negative-index based metamaterials for the visible spectrum.

Concentration dependence of the Er3+ visible and infrared luminescence in Y2-x Erx O3 thin films on Si

Y2-x Erx O3 thin films, with x varying between 0 and 0.72, have been successfully grown on crystalline silicon (c-Si) substrates by radio-frequency magnetron cosputtering of Y2 O 3 and Er2 O3 targets. As-deposited films are polycrystalline, showing the body-centered cubic structure of Y2 O3, and show only a slight lattice parameter contraction when x is increased, owing to the insertion of Er ions. All the films exhibit intense Er-related optical emission at room temperature both in the visible and infrared regions. By studying the optical properties for different excitation conditions and for different Er contents, all the mechanisms (i.e., cross relaxations, up-conversions, and energy transfers to impurities) responsible for the photoluminescence (PL) emission have been identified, and the existence of two different well-defined Er concentration regimes has been demonstrated. In the low concentration regime (x up to 0.05, Er-doped regime), the visible PL emission reaches its highest intensity, owing to the influence of up-conversions, thus giving the possibility of using Y2-x Er x O3 films as an up-converting layer in the rear of silicon solar cells. However, most of the excited Er ions populate the first two excited levels 4I11/2 and 4I13/2, and above a certain excitation flux a population inversion condition between the former and the latter is achieved, opening the route for the realization of amplifiers at 2.75 μm. Instead, in the high concentration regime (Er-compound regime), an increase in the nonradiative decay rates is observed, owing to the occurrence of cross relaxations or energy transfers to impurities. As a consequence, the PL emission at 1.54 μm becomes the most intense, thus determining possible applications for Y2-x Erx O 3 as an infrared emitting material. © 2009 American Institute of Physics.

Challenges in visible wavelength detection using optically transparent oxide semiconductors

We discuss the development of amorphous oxide semiconductor technology for optical sensor applications. In particular, we discuss the challenges of detecting visible wavelengths using this family of materials, which are known to be optically transparent due to their relatively large bandgap energy. One of the main issues with amorphous oxide semiconductors (AOS) is the ionization of the oxygen vacancies (VO) under illumination. While this can be beneficial in terms of optical absorption and high photoconductive gain, it can give rise to persistent photoconductivity (PPC). We will present techniques to overcome the PPC, and discuss how to achieve the high photoconductive gain for image sensor applications. © 2012 IEEE.

Visible diffraction from graphene and its application in holograms

A fundamental study of visible diffraction effects from patterned graphene layers is presented. By patterning graphene into optical gratings, visible diffraction from graphene is experimentally measured as a function of the number of layers and visible wavelengths. A practical application of these effects is also presented, by demonstrating an optical hologram based on graphene. A high resolution (pixel size 400 nm) intensity hologram is fabricated which, in response to incident laser light, generates a visible image. These findings suggest that visible diffraction in graphene can find practical application in holograms and should also be considered during the design and characterisation of graphene-based optical applications. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.