Post-processing of vertical-cavity surface-emitting lasers for transverse mode and polarization control

The operation on how high quality single-mode operation can be readily attained on etching circles in multimode devices is discussed. Arrays of such spots can also be envisaged. Control of the polarization state is also achieved by use of deep line etches. The output filaments and beam shapes of the conventional multimode vertical cavity surface emitting lasers (VCSEL) is shown to be engineered in terms of their positions, widths, and polarizations by use of focused ion beam etching (FIBE). Several GaAs quantum well top-emitting devices with cavity diameters of 10 μm and 18 μm were investigated.

Mode control in vertical-cavity surface-emitting lasers by post-processing using focused ion-beaih etching

Single-mode emission is achieved in previously multimode gain-guided vertical-cavity surface-emitting lasers (VCSEL's) by localized modification of the mirror reflectivity using focused ion-beam etching. Reflectivity engineering is also demonstrated to suppress transverse mode emission in an oxide-confined device, reducing the spectral width from 1.2 nm to less than 0.5 nm.

High bandwidth multimode fiber links using subcarrier multiplexing in vertical-cavity surface-emitting lasers

The usage of subcarrier multiplexing (SCM) techniques to allow link transmission in excess of the specified fiber bandwidth is described. A series of 200-Mbit/s channels with carrier frequencies of up to more than twenty times the 3-dB fiber bandwidth have been successfully used, the maximum being limited by the available electronics. To assess the transmission of the fiber, digitally modulated channels are placed on high frequency carrier signals and then used to modulate a vertical-cavity surface-emitting lasers (VCSEL).

Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser

We report a femtosecond-pulse vertical-external-cavity surface-emitting laser with a continuous repetition frequency tuning range of 8 near 1 GHz. A constant average output power of 56 ± 1 mW and near-transform-limited pulse duration of 450 ± 20 fs were observed across the entire tuning range. © 2011 American Institute of Physics.

1.55-μm VCSEL transmission performance up to 20 Gb/s for access networks

We experimentally demonstrate for the first time 1.55μm vertical-cavity surface-emitting laser (VCSEL) transmission over 6.5 km single mode fiber (SMF) at 20 Gb/s for optical access networks. Characterization of the device is also investigated. © 2009 IEEE.

32 Gb/s multilevel modulation of an 850 nm VCSEL for next-generation datacommunication standards

An 850 nm vertical-cavity surface-emitting laser is modulated at 32 Gb/s using pulse-amplitude modulation with four levels. Transmitter predistortion generates an optimized modulation waveform, which requires a receiver bandwidth of only 15 GHz. © 2011 OSA.