A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration

This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5, 5′ -bis(3-dodecyl-2-thienyl)-2, 2′ -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics.

Thermal transport in high porosity cellular metal foams

The heat dissipation capability of highly porous cellular metal foams with open cells subject to forced air convection is studied using a combined experimental and analytical approach. The cellular morphologies of six FeCrAlY (an iron-based alloy) foams and six copper alloy foams with a range of pore sizes and porosities are quantified with the scanning electronic microscope and image analysis. Experimental measurements on pressure drop and heat transfer for copper foams are carried out. A numerical model for forced convection across open-celled metal foams is subsequently developed, and the predictions are compared with those measured. Reasonably good agreement with test data is obtained, given the complexity of the cellular foam morphology and the associated momentum/energy transport. The results show that cell size has a more significant effect on the overall heat transfer than porosity. An optimal porosity is obtained based on the balance between pressure drop and overall heat transfer, which decreases as the Reynolds number is increased.

Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy

The structure and chemistry of the interface between a Si(111) substrate and an AlN(0001) thin film grown by metalorganic vapor phase epitaxy have been investigated at a subnanometer scale using high-angle annular dark field imaging and electron energy-loss spectroscopy. 〈1120̄〉AlN ∥ 〈110〉Si and 〈0001〉AlN ∥ 〈111〉 Si epitaxial relations were observed and an Al-face polarity of the AlN thin film was determined. Despite the use of Al deposition on the Si surface prior to the growth, an amorphous interlayer of composition SiNx was identified at the interface. Mechanisms leading to its formation are discussed. © 2010 American Institute of Physics.

Correlation of transport and magnetic critical currents in melt-processed YBa2Cu3O7-δ thick films

Transport critical current measurements have been carried out on melt-processed thick films of YBa2Cu3O7-δ on yttria-stabilized zirconia in fields of up to 8 T both within grains and across grain boundaries. These measurements yield Jc values of ∼3000 A cm-2 at 4.2 K and zero magnetic field and 400 A cm -2 at 77 K and zero magnetic field, taking the entire sample width as the definitive dimension. Optical and scanning electron microscopy reveals that the thick-film grains consist typically of a central "hub" region ∼50 μm in diameter, which is well connected to radial subgrains or "spokes" which extend ∼1 mm to define the complete grain structure. Attempts have been made to correlate the transport measurements of inter- and intra-hub-and-spoke (H-S) critical current with values of this parameter derived previously from magnetization measurements. Analysis of the transport measurements indicates that current flow through H-S grains is constrained to paths along the spokes via the grain hub. Taking the size of the hub as the definitive dimension yields an intra-H-S grain Jc of ∼60 000 A cm-2 at 4.2 K and 0 T, which is in reasonable agreement with the magnetization data. Experiments in which the hub is removed from individual grains confirm that this feature determines critically the J c of the film.