How is somatosensory information used to adapt to changes in the mechanical environment?

Recent studies examining adaptation to unexpected changes in the mechanical environment highlight the use of position error in the adaptation process. However, force information is also available. In this chapter, we examine adaptation processes in three separate studies where the mechanical environment was changed intermittently. We compare the expected consequences of using position error and force information in the changes to motor commands following a change in the mechanical environment. In general, our results support the use of position error over force information and are consistent with current computational models of motor learning. However, in situations where the change in the mechanical environment eliminates position error the central nervous system does not necessarily respond as would be predicted by these models. We suggest that it is necessary to take into account the statistics of prior experience to account for our observations. Another deficiency in these models is the absence of a mechanism for modulating limb mechanical impedance during adaptation. We propose a relatively simple computational model based on reflex responses to perturbations which is capable of accounting for iterative changes in temporal patterns of muscle co-activation.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.