Materials and devices toward three-dimensional integration

It has been shown that the apparent benefits of a two-layer stacked SOI system, i.e. packing density and speed improvements, are less than could be expected in the context of a VLSI requirement [1]. In this project the stacked SOI system has been identified as having major application in the realization of integrated, mixed technology systems. Zone-melting-recrystallization (ZMR) with lasers and electron beams have been used to produce device quality SOI material and a small test-bed circuit has been designed as a demonstration of the feasibility of this approach. © 1988.

Three-dimensional SBLI control for transonic airfoils

The application of shock control to transonic airfoils and wings has been demonstrated widely to have the potential to reduce wave drag. Most of the suggested control devices are two-dimensional, that is they are of uniform geometry in spanwise direction. Examples of such techniques include contour bumps and passive control. Recently it has been observed that a spanwise array of discrete three-dimensional controls can have similar benefits but also offer advantages in terms of installation complexity and drag. This paper describes research carried out in Cambridge into various three-dimensional devices, such as slots, grooves and bumps. In all cases the control device is applied to the interaction of a normal shock wave (M=1.3) with a turbulent boundary layer. Theoretical considerations are proposed to determine how such fundamental experiments can provide estimates of control performance on a transonic wing. The potential of each class of three-dimensional device for wave drag reduction on airfoils is discussed and surface bumps in particular are identified as offering potential drag savings for typical transonic wing applications under cruise conditions.

Three-Dimensional Tracking of Construction Resources using an On-Site Camera System

Vision trackers have been proposed as a promising alternative for tracking at large-scale, congested construction sites. They provide the location of a large number of entities in a camera view across frames. However, vision trackers provide only two-dimensional (2D) pixel coordinates, which are not adequate for construction applications. This paper proposes and validates a method that overcomes this limitation by employing stereo cameras and converting 2D pixel coordinates to three-dimensional (3D) metric coordinates. The proposed method consists of four steps: camera calibration, camera pose estimation, 2D tracking, and triangulation. Given that the method employs fixed, calibrated stereo cameras with a long baseline, appropriate algorithms are selected for each step. Once the first two steps reveal camera system parameters, the third step determines 2D pixel coordinates of entities in subsequent frames. The 2D coordinates are triangulated on the basis of the camera system parameters to obtain 3D coordinates. The methodology presented in this paper has been implemented and tested with data collected from a construction site. The results demonstrate the suitability of this method for on-site tracking purposes.

Experimental study into the flow physics of three-dimensional shock control bumps

This paper describes a fundamental experimental study of the flow structure around a single three-dimensional (3D) transonic shock control bump (SCB) mounted on a flat surface in a wind tunnel. Tests have been carried out with a Mach 1.3 normal shock wave located at a number of streamwise positions relative to the SCB. Details of the flow have been studied using the experimental techniques of schlieren photography, surface oil flow visualization, pressure sensitive paint, and laser Doppler anemometry. The results of the work build on the findings of previous researchers and shed new light on the flow physics of 3D SCBs. It is found that spanwise pressure gradients across the SCB ramp and the shape of the SCB sides affect the magnitude and uniformity of flow turning generated by the bump, which can impact on the spanwise propagation of the quasi-two-dimensional (2D) shock structure produced by a 3DSCB. At the bump crest, vortices can form if the pressure on the crest is significantly lower than at either side of the bump. The trajectories of these vortices, which are relatively weak, are strongly influenced by any spanwise pressure gradients across the bump tail. Asignificant difference between 2D and 3D SCBs highlighted by the study is the impact of spanwise pressure gradients on 3D SCB performance. The magnitude of these spanwise pressure gradients is determined largely by SCB geometry and shock position. Copyright © 2011 by the American Institute of Aeronautics and Astronautics, Inc.

Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si

The fluorine redistribution during partial solid-phase-epitaxial-regrowth at 650°C of a preamorphized Si substrate implanted by F was investigated by atom probe tomography (APT), transmission electron microscopy, and secondary ions mass spectrometry. Three-dimensional spatial distribution of F obtained by APT provides a direct observation of F-rich clusters with a diameter of less than 1.5 nm. Density variation compatible with cavities and F-rich molecular ions in correspondence of clusters are in accordance with cavities filled by SiF 4 molecules. Their presence only in crystalline Si while they are not revealed by statistical analysis in amorphous suggests that they form at the amorphous/crystal interface. © 2012 American Institute of Physics.

Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold

The three-dimensional spatial distribution of Al in the high-k metal gates of metal-oxide-semiconductor field-effect-transistors is measured by atom probe tomography. Chemical distribution is correlated with the transistor voltage threshold (VTH) shift generated by the introduction of a metallic Al layer in the metal gate. After a 1050 °C annealing, it is shown that a 2-Å thick Al layer completely diffuses into oxide layers, while a positive VTH shift is measured. On the contrary, for thicker Al layers, Al precipitation in the metal gate stack is observed and the VTH shift becomes negative. © 2012 American Institute of Physics.

Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor

Atom probe tomography was used to study the redistribution of platinum and arsenic atoms after Ni(Pt) silicidation of As-doped polycrystalline Si. These measurements were performed on a field-effect transistor and compared with those obtained in unpatterned region submitted to the same process. These results suggest that Pt and As redistribution during silicide formation is only marginally influenced by the confinement in microelectronic devices. On the contrary, there is a clear difference with the redistribution reported in the literature for the blanket wafers. Selective etching used to remove the non-reacted Ni(Pt) film after the first rapid heat treatment may induce this difference. © 2011 American Institute of Physics.