On the selective removal of steel by laser-assisted vortex machining

Of all laser-based processes, laser machining has received little attention compared with others such as cutting, welding, heat treatment and cleaning. The reasons for this are unclear, although much can be gained from the development of an effcient laser machining process capable of processing diffcult materials such as high-performance steels and aerospace alloys. Existing laser machining processes selectively remove material by melt shearing and evaporation. Removing material by melting and evaporation leads to very low wall plug effciencies, and the process has difficulty competing with conventional mechanical removal methods. Adopting a laser machining solution for some materials offers the best prospects of effcient manufacturing operations. This paper presents a new laser machining process that relies on melt shear removal provided by a vertical high-speed gas vortex. Experimental and theoretical studies of a simple machining geometry have identifed a stable vortex regime that can be used to remove laser-generated melt effectively. The resultant combination of laser and vortex is employed in machining trials on 43A carbon steel. Results have shown that laser slot machining can be performed in a stable regime at speeds up to 150mm/min with slot depths of 4mm at an incident CO2 laser power level of 600 W. Slot forming mechanisms and process variables are discussed for the case of steel. Methods of bulk machining through multislot machining strategies are also presented.

Selective epitaxial growth in silicon on insulator: Planarity and mass flow

Seeded zone-melt recrystallization using a dual electron beam system has been performed on silicon-on-insulator material, which was prepared with single-crystal silicon filling of the seed windows by selective epitaxial growth. The crystal quality has been assessed by a variety of microscopic techniques, and it is shown that single-crystal films 0.5-1.0 μm thick over 1.0 μm of isolating oxide may be prepared by this method. These films have considerably less lateral variation in thickness than standard material, in which the windows are not so filled. The filling method is suitable for both single- and multiple-layer silicon-on-insulator, and gives the advantages of excellent layer uniformity after recrystallization and improved planarity of the whole chip structure. Experiments using various amounts of seed window filling have shown that the lateral variations of silicon film thickness seen in unplanarized material are due to stress relief in the cap oxide when the silicon film is molten, rather than the effect previously postulated in which they were assumed to be due to the contraction of silicon on melting.