Risk sensitivity in a motor task with speed-accuracy trade-off.

When a racing driver steers a car around a sharp bend, there is a trade-off between speed and accuracy, in that high speed can lead to a skid whereas a low speed increases lap time, both of which can adversely affect the driver's payoff function. While speed-accuracy trade-offs have been studied extensively, their susceptibility to risk sensitivity is much less understood, since most theories of motor control are risk neutral with respect to payoff, i.e., they only consider mean payoffs and ignore payoff variability. Here we investigate how individual risk attitudes impact a motor task that involves such a speed-accuracy trade-off. We designed an experiment where a target had to be hit and the reward (given in points) increased as a function of both subjects' endpoint accuracy and endpoint velocity. As faster movements lead to poorer endpoint accuracy, the variance of the reward increased for higher velocities. We tested subjects on two reward conditions that had the same mean reward but differed in the variance of the reward. A risk-neutral account predicts that subjects should only maximize the mean reward and hence perform identically in the two conditions. In contrast, we found that some (risk-averse) subjects chose to move with lower velocities and other (risk-seeking) subjects with higher velocities in the condition with higher reward variance (risk). This behavior is suboptimal with regard to maximizing the mean number of points but is in accordance with a risk-sensitive account of movement selection. Our study suggests that individual risk sensitivity is an important factor in motor tasks with speed-accuracy trade-offs.

Bias-dependent recovery time of all-optical resonant nonlinearity in InGaAsP/InGaAsP MQW waveguide

We have investigated a resonant refractive nonlinearity in a semiconductor waveguide by measuring intensity dependent phase shifts and bias-dependent recovery times. The measurements were performed on an optimized 750-μm-long AR coated buried heterostructure MQW p-i-n waveguide with a bandedge at 1.48 μm. Figure 1 shows the experimental arrangement. The mode-locked color center laser was tuned to 50 meV beyond the bandedge and 8 ps pulses with peak incident power up to 57 W were coupled into the waveguide. Some residual bandtail absorption remains at this wavelength and this is sufficient to cause carriers to be photogenerated and these give rise to a refractive nonlinearity, predominantly by plasma and bandfilling effects. A Fabry-Perot interferometer is used to measure the spectrum of the light which exits the waveguide. The nonlinearity within the guide causes self phase modulation (SPM) of the light and a study of the spectrum allows information to be recovered on the magnitude and recovery time of the nonlinear phase shift with a reasonable degree of accuracy. SPM spectra were recorded for a variety of pulse energies coupled into he unbiased waveguide. Figure 2 shows the resultant phase shift measured from the SPM spectra as a function of pulse energy. The relationship is a linear one, indicating that no saturation of the nonlinearity occurs for coupled pulse energies up to 230 pJ. A π phase shift, the minimum necessary for an all-optical switch, is obtained for a coupled pulse energy of 57 pJ while the maximum phase shift, 4 π, was measured for 230 pJ. The SPM spectra were highly asymmetric with pulse energy shifted to higher frequencies. Such spectra are characteristic of a slow, negative nonlinearity. This relatively slow speed is expected for the unbiased guide as the recovery time will be of the order of the recombination time of the photogenerated electrons, about 1 ns for InGaAsP material. In order to reduce the recovery time of the nonlinearity, it is necessary to remove the photogenerated carriers from the waveguide by a process other than recombination. One such technique is to apply a reverse bias to the waveguide in order to sweep the carriers out. Figure 3 shows the effect on the recovery time of the nonlinearity of applying reverse bias to the waveguide for 230 pJ coupled power. The recovery time was reduced from one much longer than the length of the pulse, estimated to be about 1 ns, at zero bias to 18 ± 3 ps for a bias voltage greater than -4 V. This compares with a value of 24 ps obtained in a bulk waveguide.

Blade loading and its application in the mean-line design of low pressure turbines

In order to minimize the number of iterations to a turbine design, reasonable choices of the key parameters must be made at the earliest possible opportunity. The choice of blade loading is of particular concern in the low pressure (LP) turbine of civil aero engines, where the use of high-lift blades is widespread. This paper presents an analytical mean-line design study for a repeating-stage, axial-flow Low Pressure (LP) turbine. The problem of how to measure blade loading is first addressed. The analysis demonstrates that the Zweifel coefficient [1] is not a reasonable gauge of blade loading because it inherently depends on the flow angles. A more appropriate coefficient based on blade circulation is proposed. Without a large set of turbine test data it is not possible to directly evaluate the accuracy of a particular loss correlation. The analysis therefore focuses on the efficiency trends with respect to flow coefficient, stage loading, lift coefficient and Reynolds number. Of the various loss correlations examined, those based on Ainley and Mathieson ([2], [3], [4]) do not produce realistic trends. The profile loss model of Coull and Hodson [5] and the secondary loss models of Craig and Cox [6] and Traupel [7] gave the most reasonable results. The analysis suggests that designs with the highest flow turning are the least sensitive to increases in blade loading. The increase in Reynolds number lapse with loading is also captured, achieving reasonable agreement with experiments. Copyright © 2011 by ASME.

Modelling 2DEG charges in AlGaN/GaN heterostructures

In this paper we compare different approaches to calculating the charge density in the 2DEG layer of AlGaN/GaN HEMTs. The methods used are (i) analytical theory implemented in MATLAB, (ii) finite-element analysis using semiconductor TCAD software that implements only the Poisson and continuity equations, and (iii) 1D software that solves the Poisson and Schrödinger equations self-consistently. By using the 1D Poisson-Schrödinger solver, we highlight the consequences of neglecting the Schrödinger equation. We conclude that the TCAD simulator predicts with a reasonable level of accuracy the electron density in the 2DEG layer for both a conventional HEMT structure and one featuring an extra GaN cap layer. In addition, while the sheet charge density is not significantly affected by including Schrödinger, its confinement in the channel is found to be modified. © 2012 IEEE.