APSK coded modulation schemes for nonlinear satellite channels with high power and spectral efficiency

A new class of 16-ary Amplitude Phase Shift Keying (APSK) coded modulations deemed double-ring PSK modulations best suited for (satellite) nonlinear channels is proposed. Constellation parameters optimization has been based on geometric and information-theoretic considerations. Furthermore, pre- and post-compensation techniques to reduce the nonlinearity impact have been examined. Digital timing clock and carrier phase have been derived and analyzed for a Turbo coded version of the same new modulation scheme. Finally, the performance of state-of the art Turbo coded modulation for this new 16-ary digital modulation has been investigated and compared to the known TCM schemes. It is shown that for the same coding scheme, double-ring APSK modulation outperforms classical 16-QAM and 16-PSK over a typical satellite nonlinear channel due to its intrinsic robustness against the High Power Amplifier (HPA) nonlinear characteristics. The new modulation is shown to be power- and spectrally-efficient, with interesting applications to satellite communications. © 2002 by the American Institute of Aeronautics and Astronautics, Inc.

InGaN/GaN LEDs grown on Si(111): Dependence of device performance on threading dislocation density and emission wavelength

We demonstrate the growth of crack-free blue and greenemitting LED structures grown on 2-inch and 6-inch Si(111) substrates by metalorganic vapour phase epitaxy (MOVPE), using AlN nucleation layers and AlGaN buffer layers for stress management. LED device performance and its dependence on threading dislocation (TD) density and emission wavelength were studied. Despite the inherently low light extraction efficiency, an output power of 1.2 mW at 50 mA was measured from a 500 μm square planar device, emitting at 455 nm. The light output decreases dramatically as the emission wavelength increases from 455 nm to 510 nm. For LED devices emitting at similar wavelength, the light output was more than doubled when the TD density was reduced from 5×1 09 cm-2 to 2×109 cm-2. Our results clearly show that high TD density is detrimental to the overall light output, highlighting the need for further TD reduction for structures grown on Si. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

Compact double-side liquid-impingement-cooled integrated power electronic module

This paper presents a compact integrated power electronic module (IPEM) which seeks to overcome the volumetric power density limitations of conventional packaging technologies. A key innovation has been the development of a substrate sandwich structure which permits double side cooling of the embedded dies whilst controlling the mechanical stresses both within the module and at the heat exchanger interface. A 3-phase inverter module has been developed, integrating the sandwich structures with high efficiency impingement coolers, delink capacitance and gate drive units. Full details of the IPEM construction and electrical evaluation are given in the paper. © 2007 IEEE.

Time-frequency spectral estimation of speech

In recent years there has been a growing interest amongst the speech research community into the use of spectral estimators which circumvent the traditional quasi-stationary assumption and provide greater time-frequency (t-f) resolution than conventional spectral estimators, such as the short time Fourier power spectrum (STFPS). One distribution in particular, the Wigner distribution (WD), has attracted considerable interest. However, experimental studies have indicated that, despite its improved t-f resolution, employing the WD as the front end of speech recognition system actually reduces recognition performance; only by explicitly re-introducing t-f smoothing into the WD are recognition rates improved. In this paper we provide an explanation for these findings. By treating the spectral estimation problem as one of optimization of a bias variance trade off, we show why additional t-f smoothing improves recognition rates, despite reducing the t-f resolution of the spectral estimator. A practical adaptive smoothing algorithm is presented, whicy attempts to match the degree of smoothing introduced into the WD with the time varying quasi-stationary regions within the speech waveform. The recognition performance of the resulting adaptively smoothed estimator is found to be comparable to that of conventional filterbank estimators, yet the average temporal sampling rate of the resulting spectral vectors is reduced by around a factor of 10. © 1992.

Stepped gate polysilicon thin film transistor for large area power applications

For the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.

Laser-vapour interaction in high-power cw Nd:YAG laser welding

During high-power cw Nd:YAG laser welding a vapour plume is formed containing vaporised material ejected from the keyhole. Spectroscopic studies of the vapour emission have demonstrated that the vapour can be considered as thermally excited gas with a stable temperature (less than 3000K), not as partially ionised plasma. In this paper, a review of temperatures in the vapour plume is presented. The difficulties in the analysis of the plume spectroscopic results are reviewed and explained. It is shown that particles present in the vapour interact with the laser beam, attenuating it. The attenuation can be calculated with Mie scattering theory, however, vaporisation and particle formation also both play a major role in this process. The laser beam is also defocused due to the scattering part of the attenuation mechanism, changing the energy density in the laser beam. Methods for mitigating the effects of the laser beam-vapour interaction, using control gases, are presented together with their advantages and disadvantages. This 'plume control' has two complementary roles: firstly, the gas must divert the vapour plume from out of the laser beam path, preventing the attenuation. Secondly, the gas has to stabilise the front wall of the keyhole, to prevent porosity formation.

Wideband tunable, high-power, graphene mode-locked ultrafast lasers

Ultrafast passively mode-locked lasers with spectral tuning capability and high output power have widespread applications in biomedical research, spectroscopy and telecommunications [1,2]. Currently, the dominant technology is based on semiconductor saturable absorber mirrors (SESAMs) [2,3]. However, these typically have a narrow tuning range, and require complex fabrication and packaging [2,3]. A simple, cost-effective alternative is to use Single Wall Carbon Nanotubes (SWNTs) [4,10] and Graphene [10,14]. Wide-band operation is possible using SWNTs with a wide diameter distribution [5,10]. However, SWNTs not in resonance are not used and may contribute to unwanted insertion losses [10]. The linear dispersion of the Dirac electrons in graphene offers an ideal solution for wideband ultrafast pulse generation [10,15]. © 2011 IEEE.

Trench insulated gate bipolar transistor - a high power switching device

This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TIGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the Trench IGBT over its conventional planar variant are highlighted. It is concluded that the Trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable switching devices.

A priori assessment of algebraic flame surface density models in the context of large eddy simulation for nonunity lewis number flames in the thin reaction zones regime

The performance of algebraic flame surface density (FSD) models has been assessed for flames with nonunity Lewis number (Le) in the thin reaction zones regime, using a direct numerical simulation (DNS) database of freely propagating turbulent premixed flames with Le ranging from 0.34 to 1.2. The focus is on algebraic FSD models based on a power-law approach, and the effects of Lewis number on the fractal dimension D and inner cut-off scale η i have been studied in detail. It has been found that D is strongly affected by Lewis number and increases significantly with decreasing Le. By contrast, η i remains close to the laminar flame thermal thickness for all values of Le considered here. A parameterisation of D is proposed such that the effects of Lewis number are explicitly accounted for. The new parameterisation is used to propose a new algebraic model for FSD. The performance of the new model is assessed with respect to results for the generalised FSD obtained from explicitly LES-filtered DNS data. It has been found that the performance of the most existing models deteriorates with decreasing Lewis number, while the newly proposed model is found to perform as well or better than the most existing algebraic models for FSD. © 2012 Mohit Katragadda et al.

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Power absorption invariance for brownian spring forcing

In [5] it was shown that, for a standard quarter-car vehicle model and a road disturbance whose velocity profile is white noise of intensity A, the mean power dissipated in the suspension is equal to kA/2 where k is the tyre vertical stiffness. It is remarkable that the power dissipation turns out to be independent of all masses and suspension parameters. The proof in [5] makes use of a spectral formulation of white noise and is specific to linear systems. This paper casts the result in a more general form and shows that it follows from a simple application of Ito calculus. © 2012 IEEE.

Conceptual design of Americium nuclear battery for space power applications

This work presents simplified 242mAm-fueled nuclear battery concept design featuring direct fission products energy conversion and passive heat rejection. Optimization of the battery operating characteristics and dimensions was performed. The calculations of power conversion efficiency under thermal and nuclear design constraints showed that 5.6 W e/kg power density can be achieved, which corresponds to conversion efficiency of about 4%. A system with about 190 cm outer radius translates into 17.8 MT mass per 100 kW e. Total power scales linearly with the outer surface area of the battery through which the residual heat is rejected. Tradeoffs between the battery lifetime, mass, dimensions, power rating, and conversion efficiency are presented and discussed. The battery can be used in a wide variety of interplanetary missions with power requirements in the kW to MW range. Copyright © 2007 by the American Institute of Aeronautics and Astronautics, Inc. All rights reserved.

Americium nuclear battery for space power applications

The work presents simplified242mAm fueled nuclear battery concept design featuring direct fission products energy conversion and passive heat rejection. The performed calculations of power conversion efficiency under thermal and nuclear design constraints showed that 14 W/kg power density can be achieved, which corresponds to conversion efficiency of about 6%. Total power of the battery scales linearly with its surface area. 144 kW of electric power can be produced by a nuclear battery with an external radius of about 174 cm and total mass of less than 10300 kg. The mass of242m Am fuel for such a system is 3200 gram.

Spectroscopic characterization of protein-wrapped single-wall carbon nanotubes and quantification of their cellular uptake in multiple cell generations

We study the spectral characteristics of bovine serum albumin (BSA) protein conjugated single-wall carbon nanotubes (SWNTs), and quantify their uptake by macrophages. The binding of BSA onto the SWNT surface is found to change the protein structure and to increase the doping of the nanotubes. The G-band Raman intensity follows a well-defined power law for SWNT concentrations of up to 33 μg ml-1 in aqueous solutions. Subsequently, in vitro experiments demonstrate that incubation of BSA-SWNT complexes with macrophages affects neither the cellular growth nor the cellular viability over multiple cell generations. Using wide spot Raman spectroscopy as a fast, non-destructive method for statistical quantification, we observe that macrophages effectively uptake BSA-SWNT complexes, with the average number of nanotubes internalized per cell remaining relatively constant over consecutive cell generations. The number of internalized SWNTs is found to be ∼30 × 106 SWNTs/cell for a 60 mm-2 seeding density and ∼100 × 10 6 SWNTs/cell for a 200 mm-2 seeding density. Our results show that BSA-functionalized SWNTs are an efficient molecular transport system with low cytotoxicity maintained over multiple cell generations. © 2013 IOP Publishing Ltd.

On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors

Gallium nitride (GaN) has a bright future in high voltage device owing to its remarkable physical properties and the possibility of growing heterostructures on silicon substrates. GaN High Electron Mobility Transistors (HEMTs) are expected to make a strong impact in off line applications and LED drives. However, unlike in silicon-based power devices, the on-state resistance of HEMT devices is hugely influenced by donor and acceptor traps at interfaces and in the bulk. This study focuses on the influence of donor traps located at the top interface between the semiconductor layer and the silicon nitride on the 2DEG density. It is shown through TCAD simulations and analytical study that the 2DEG charge density has an 'S' shape variation with two distinctive 'flat' regions, wherein it is not affected by the donor concentration, and one linear region. wherein the channel density increases proportionally with the donor concentration. We also show that the upper threshold value of the donor concentration within this 'S' shape increases significantly with the AIGaN thickness and the Al mole fraction and is highly affected by the presence of a thin GaN cap layer. © 2013 IEEE.