SOI diode temperature sensor operated at ultra high temperatures-a critical analysis

This paper investigates the performance of diode temperature sensors when operated at ultra high temperatures (above 250°C). A low leakage Silicon On Insulator (SOI) diode was designed and fabricated in a 1 μm CMOS process and suspended within a dielectric membrane for efficient thermal insulation. The diode can be used for accurate temperature monitoring in a variety of sensors such as microcalorimeters, IR detectors, or thermal flow sensors. A CMOS compatible micro-heater was integrated with the diode for local heating. It was found that the diode forward voltage exhibited a linear dependence on temperature as long as the reverse saturation current remained below the forward driving current. We have proven experimentally that the maximum temperature can be as high as 550°C. Long term continuous operation at high temperatures (400°C) showed good stability of the voltage drop. Furthermore, we carried out a detailed theoretical analysis to determine the maximum operating temperature and exlain the presence of nonlinearity factors at ultra high temperatures. © 2008 IEEE.

Detached-eddy simulation of transonic flow past a fan-blade section

Detached-eddy simulation of transonic flow past a thin section of a fan blade has been carried out. The inflow Mach number is 1.03, and a bow shock forms upstream of the blade. The shock (corresponding to an adjacent blade) impinges on the suction-side boundary layer which causes separation and rapid transition to turbulence. The boundary layer later re-attaches near the trailing edge. The pressure-side boundary layer transitions near the leading edge and remains attached. Mean surface pressure shows basic agreement with a steady RANS calculation; strong shock motion in the DES is the major cause of discrepancy. Surface pressure spectra are investigated, and low-frequency two-dimensional disturbances associated with the shock motion are dominant. Removing the two-dimensional component from the spectra, the pressure-side three-dimensional spectra reproduce the spectral shape given by a correlation for flat-plate boundary layer wall-pressure spectra developed by Goody. 1 The suction-side disturbances produce similar high- and intermediate-frequency scalings despite substantially different boundary layer development. Near-wake results show that disturbance kinetic energy peaks at the suction-side inflection point of the mean profile, and that the energy is concentrated at low frequencies relative to the near-trailing edge surface pressure. Copyright © 2009 by the authors.

Strong plasmonic enhancement of photovoltage in graphene

From the wide spectrum of potential applications of graphene, ranging from transistors and chemical sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most promising. Indeed, graphene's suitability for high-speed photodetection was demonstrated in an optical communication link operating at 10 Gbit s 1. However, the low responsivity of graphene-based photodetectors compared with traditional III-V-based ones is a potential drawback. Here we show that, by combining graphene with plasmonic nanostructures, the efficiency of graphene-based photodetectors can be increased by up to 20 times, because of efficient field concentration in the area of a p-n junction. Additionally, wavelength and polarization selectivity can be achieved by employing nanostructures of different geometries. © 2011 Macmillan Publishers Limited. All rights reserved.