Enticing general engineering undergrads into signal processing with Photo-Editing and image search

The University of Cambridge is unusual in that its Department of Engineering is a single department which covers virtually all branches of engineering under one roof. In their first two years of study, our undergrads study the full breadth of engineering topics and then have to choose a specialization area for the final two years of study. Here we describe part of a course, given towards the end of their second year, which is designed to entice these students to specialize in signal processing and information engineering topics for years 3 and 4. The course is based around a photo editor and an image search application, and it requires no prior knowledge of the z-transform or of 2-dimensional signal processing. It does assume some knowledge of 1-D convolution and basic Fourier methods and some prior exposure to Matlab. The subject of this paper, the photo editor, is written in standard Matlab m-files which are fully visible to the students and help them to see how specific algorithms are implemented in detail. © 2011 IEEE.

Dual gate photo-thin film transistor with high photoconductive gain for high reliability, and low noise flat panel transparent imager

In this presentation, we report excellent electrical and optical characteristics of a dual gate photo thin film transistor (TFT) with bi-layer oxide channel, which was designed to provide virgin threshold voltage (V T) control, improve the negative bias illumination temperature stress (NBITS) reliability, and offer high photoconductive gain. In order to address the photo-sensitivity of phototransistor for the incoming light, top transparent InZnO (IZO) gate was employed, which enables the independent gate control of dual gate photo-TFT without having any degradation of its photosensitivity. Considering optimum initial V T and NBITS reliability for the device operation, the top gate bias was judiciously chosen. In addition, the speed and noise performance of the photo-TFT is competitive with silicon photo-transistors, and more importantly, its superiority lies in optical transparency. © 2011 IEEE.

Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film

A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film and a mixed amorphous Se-As2Se3 film is compared from a durability perspective and photo-electric perspective. The former is durable to incident laser induced degradation after numerous laser scans and does not crystallise till 105 of annealing, both of which are improved properties from the mixed evaporated film. In terms of photo-electric properties, the ratio between the photocurrent and the dark current improved whereas the increase of the dark current was higher than that of As2Se3 due to the unique current path developed within the mille-feuille structure. Implementing this structure into various amorphous semiconductors may open up a new possibility towards structure-sensitive amorphous photoconductors. © 2013 Elsevier B.V.

Optically activated shutter using a photo-tunable short-pitch chiral nematic liquid crystal

We report the demonstration of an optically activated shutter based upon a short-pitch chiral nematic liquid crystal (LC) device sandwiched between crossed polarizers. This LC is comprised of photo-active chiral dopants. In the trans-state, the LC appears dark between crossed polarizers due to the very short pitch. As the pitch is extended through exposure to ultraviolet light, the device becomes transmissive reaching a maximum for a particular value of the pitch. As a result, it is possible to switch between the light and dark states by subjecting the device to visible light so as to cause a cis-trans photo-isomerisation. © 2013 AIP Publishing LLC.

High-performance nanowire oxide photo-thin film transistor.

A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 10(6) test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.