Highly flexible all-optical wavelength conversion at 2.488 Gbits/s using a multi-output-wavelength laser

An integrated multiwavelength grating cavity (MGC) laser fabricated by selective area regrowth is demonstrated. In addition to allowing wavelength conversion, the device can perform various important network functions such as space switching and multiplexing. The use of the device for these functions offers several advantages from a wavelength division multiplexing (WDM) network, such as flexibility, reduced component count, size, and the associated cost reduction.

Fabrication of test structures for 4×4 InP/InGaAsP integrated optical matrix

A novel optical switching matrix measuring 1×2 mm2 in size is fabricated. The switching matrix is composed of waveguides, four 1×4 multimode interference (MMI) splitters, 32 total internal refraction mirrors and four 4×1 MMI combiners with the extremely compact size of 1×2 mm2. This integrated device are assessed and loss contribution measured from test structure is presented.

1 × 4 space switching and simultaneous all-optical wavelength conversion at 2.488Gbit/s using a single monolithically integrated multiwavelength laser

A novel InGaAs/InGaAsP/InP integrated multiwavelength grating cavity laser is presented, which has been used to demonstrate space switching and simultaneous all-optical wavelength conversion at bit rates of 2.488 Gbit/s. This has been achieved using a single monolithically integrated device without the need for post-filtering to separate the converted signal from the input.

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

Nanostructuring of materials for device and sensor applications

The recent developments in nanotechnology are reviewed, with particular emphasis on its application in microsystem technology where increased reliability is achieved by integrating the sensor and the readout electronics on the same substrate. New applications may be possible using integrated micromechanical clips to connect optic fibers and components in integrated silicon systems. Some of the key developments in enabling technologies are also described, including the control of thin film deposition, nanostructuring to tailor the properties of thin film, silicon micromachining to make sensors, and microclips for the low-cost assembly of integrated optical microsystems.

All-optical 3R regeneration and format conversion in an integrated SOA/DFB laser

Using a compact, integrated device at 2.488Gb/s, simultaneous NRZ to RZ format conversion and regeneration was achieved. The regenerated signal has a negative BER sensitivity of -1.5dB compared with a data signal transmitted down 101km of standard fiber.

All-optical 3R regeneration and wavelength conversion in an integrated SOA/DFB laser: Experiment and simulation

The simultaneous all optical 3R regeneration and format conversion in a simple, single integrated device was examined. The integrated device consisted of a semiconductor optical fiber (SOA) monolithically integrated with a distributed feedback (DFB) laser. Gain saturation was employed for the transmission of a data signal regenerated all-optically in the laser/amplifier device. The regeneration of the electrically filtered eye diagrams was observed by noise removal and extinction ratio-improvement by the device.

10-Gbits/s all-optical 3R regeneration and format conversion using a gain-switched DFB laser

A strain-compensated multiple quantum well device is used as a DFB laser, this has been optimized for low jitter gain switched operation at 10 GHz. The signal is transmitted down 80 km of standard fiber then amplified, filtered and polarization controlled before being injected into a DFB laser. The purpose of this regeneration process is to gain switch the DFB with the extracted clock signal in order to retime the converted signal. This process also simultaneously converts the input NRZ format to an output RZ data to format and results in a signal whose optical power and extinction ratio are considerably improved by the regeneration process.

A closely integrated digital image capture device for embedded applications

A modular image capture system with close integration to CCD cameras has been developed. The aim is to produce a system capable of integrating CCD sensor, image capture and image processing into a single compact unit. This close integration provides a direct mapping between CCD pixels and digital image pixels. The system has been interfaced to a digital signal processor board for the development and control of image processing tasks. These have included characterization and enhancement of noisy images from an intensified camera and measurement to subpixel resolutions. A highly compact form of the image capture system is in an advanced stage of development. This consists of a single FPGA device and a single VRAM providing a two chip image capturing system capable of being integrated into a CCD camera. A miniature compact PC has been developed using a novel modular interconnection technique, providing a processing unit in a three dimensional format highly suited to integration into a CCD camera unit. Work is under way to interface the compact capture system to the PC using this interconnection technique, combining CCD sensor, image capture and image processing into a single compact unit. ©2005 Copyright SPIE - The International Society for Optical Engineering.

Using a semiconductor optical amplifier integrated with a pump laser for mid-span spectral inversion and wavelength conversion

A semiconductor optical amplifier monolithically integrated with a distributed feedback pump laser is used for non-degenerate four wave mixing applications. Experimental results are presented which illustrate the use of this compact device for both wavelength conversion and dispersion compensation applications at high data rates.

Improved infrared thermal imaging of a CMOS MEMS device

We report a technique which can be used to improve the accuracy of infrared (IR) surface temperature measurements made on MEMS (Micro-Electro-Mechanical- Systems) devices. The technique was used to thermally characterize a SOI (Silicon-On-Insulator) CMOS (Complementary Metal Oxide Semiconductor) MEMS thermal flow sensor. Conventional IR temperature measurements made on the sensor were shown to give significant surface temperature errors, due to the optical transparency of the SiO 2 membrane layers and low emissivity/high reflectivity of the metal. By making IR measurements on radiative carbon micro-particles placed in isothermal contact with the device, the accuracy of the surface temperature measurement was significantly improved. © 2010 EDA Publishing/THERMINIC.

Theoretical model for dicke superradiance in a semiconductor laser device

A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability. © 2011 IEEE.

Modal liquid crystal devices in optical tweezing: 3D control and oscillating potential wells

We investigate the use of liquid crystal (LC) adaptive optics elements to provide full 3 dimensional particle control in an optical tweezer. These devices are suitable for single controllable traps, and so are less versatile than many of the competing technologies which can be used to control multiple particles. However, they have the advantages of simplicity and light efficiency. Furthermore, compared to binary holographic optical traps they have increased positional accuracy. The transmissive LC devices could be retro-fitted to an existing microscope system. An adaptive modal LC lens is used to vary the z-focal position over a range of up to 100 μm and an adaptive LC beam-steering device is used to deflect the beam (and trapped particle) in the x-y plane within an available radius of 10 μm. Furthermore, by modifying the polarisation of the incident light, these LC components also offer the opportunity for the creation of dual optical traps of controllable depth and separation. © 2006 Optical Society of America.

PCB-integrated optical gas sensor

A novel technological platform for multiple gas detection based on the use of PCB-integrated polymer waveguides is presented. A proof-of-principle ammonia sensor is reported integrating onto low-cost FR4 substrates all essential photonic, electronic and chemical components. The device's potential to detect multiple gases is demonstrated. © 2011 IEEE.

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

The composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed, which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays. © 2012 Macmillan Publishers Limited. All rights reserved.