Adaptive agent-based manufacturing control and its application to flow shop routing control

The manufacturing industry is currently facing unprecedented challenges from changes and disturbances. The sources of these changes and disturbances are of different scope and magnitude. They can be of a commercial nature, or linked to fast product development and design, or purely operational (e.g. rush order, machine breakdown, material shortage etc.). In order to meet these requirements it is increasingly important that a production operation be flexible and is able to adapt to new and more suitable ways of operating. This paper focuses on a new strategy for enabling manufacturing control systems to adapt to changing conditions both in terms of product variation and production system upgrades. The approach proposed is based on two key concepts: (1) An autonomous and distributed approach to manufacturing control based on multi-agent methods in which so called operational agents represent the key physical and logical elements in the production environment to be controlled - for example, products and machines and the control strategies that drive them and (2) An adaptation mechanism based around the evolutionary concept of replicator dynamics which updates the behaviour of newly formed operational agents based on historical performance records in order to be better suited to the production environment. An application of this approach for route selection of similar products in manufacturing flow shops is developed and is illustrated in this paper using an example based on the control of an automobile paint shop.

Direct growth of horizontally aligned carbon nanotubes between electrodes and its application to field-effect transistors

This paper presents direct growth of horizontally aligned carbon nanotubes (CNTs) between two predefined various inter-spacing up to tens of microns of electrodes (pads) and its use as CNT field-effect transistors (CNT-FETs). The catalytic metals were prepared, consisting of iron (Fe), aluminum (Al) and platinum (Pt) triple layers, on the thermal silicon oxide substrate (Pt/Al/Fe/SiO2). Scanning electron microscopy measurements of CNT-FETs from the as-grown samples showed that over 80% of the nanotubes are grown across the catalytic electrodes. Moreover, the number of CNTs across the catalytic electrodes is roughly controllable by adjusting the growth condition. The Al, as the upper layer on Fe electrode, not only plays a role as a barrier to prevent vertical growth but also serves as a porous medium that helps in forming smaller nano-sized Fe particles which would be necessary for lateral growth of CNTs. Back-gate field effect transistors were demonstrated with the laterally aligned CNTs. The on/off ratios in all the measured devices are lower than 100 due to the drain leakage current. ©2010 IEEE.