Analysis of defect-related localized emission processes in InGaN/GaN-based LEDs

This paper reports an extensive analysis of the defect-related localized emission processes occurring in InGaN/GaN-based light-emitting diodes (LEDs) at low reverse- and forward-bias conditions. The analysis is based on combined electrical characterization and spectrally and spatially resolved electroluminescence (EL) measurements. Results of this analysis show that: (i) under reverse bias, LEDs can emit a weak luminescence signal, which is directly proportional to the injected reverse current. Reverse-bias emission is localized in submicrometer-size spots; the intensity of the signal is strongly correlated to the threading dislocation (TD) density, since TDs are preferential paths for leakage current conduction. (ii) Under low forward-bias conditions, the intensity of the EL signal is not uniform over the device area. Spectrally resolved EL analysis of green LEDs identifies the presence of localized spots emitting at 600 nm (i.e., in the yellow spectral region), whose origin is ascribed to localized tunneling occurring between the quantum wells and the barrier layers of the diodes, with subsequent defect-assisted radiative recombination. The role of defects in determining yellow luminescence is confirmed by the high activation energy of the thermal quenching of yellow emission (Ea =0.64&eV). © 2012 IEEE.

Mode-localized displacement sensing

We report the construction of a new class of micromachined displacement sensors that employ the phenomenon of vibration-mode localization for monitoring minute inertial displacements. It is demonstrated both theoretically and experimentally that the eigenstate-shifted output signal of such mode-localized displacement sensors may be as high as 1000 times greater than corresponding resonant-frequency variations that serve as the output in the more traditional vibratory resonant micromechanical displacement/motion sensors. The high parametric sensitivities attainable in such mode-localized displacement sensors, together with their inherent advantages of improved environmental robustness and electrical tunability, suggest an alternative approach in achieving improved sensitivity and stability in high-resolution displacement transduction. © 1992-2012 IEEE.

Vibration response of a wind-turbine planetary gear set in the presence of a localized planet bearing defect

In a wind-turbine gearbox, planet bearings exhibit a high failure rate and are considered as one of the most critical components. Development of efficient vibration based fault detection methods for these bearings requires a thorough understanding of their vibration signature. Much work has been done to study the vibration properties of healthy planetary gear sets and to identify fault frequencies in fixed-axis bearings. However, vibration characteristics of planetary gear sets containing localized planet bearing defects (spalls or pits) have not been studied so far. In this paper, we propose a novel analytical model of a planetary gear set with ring gear flexibility and localized bearing defects as two key features. The model is used to simulate the vibration response of a planetary system in the presence of a defective planet bearing with faults on inner or outer raceway. The characteristic fault signature of a planetary bearing defect is determined and sources of modulation sidebands are identified. The findings from this work will be useful to improve existing sensor placement strategies and to develop more sophisticated fault detection algorithms. Copyright © 2011 by ASME.

Localized tail state distribution in amorphous oxide transistors deduced from low temperature measurements

In this paper, we extract density of localized tail states from measurements of low temperature conductance in amorphous oxide transistors. At low temperatures, trap-limited conduction prevails, allowing extraction of the trapped carrier distribution with energy. Using a test device with a-InGaZnO channel layer, the extracted tail state energy and density at the conduction band minima are 20 meV and 2 × 10 19 cm -3 eV -1, respectively, which are consistent with values reported in the literature. Also, the field-effect mobility as a function of temperature from 77 K to 300 K is retrieved for different gate voltages, yielding the activation energy and the percolation threshold. © 2012 American Institute of Physics.