19 resultados para level scheme of I-127
Resumo:
Only very few constructed facilities today have a complete record of as-built information. Despite the growing use of Building Information Modelling and the improvement in as-built records, several more years will be required before guidelines that require as-built data modelling will be implemented for the majority of constructed facilities, and this will still not address the stock of existing buildings. A technical solution for scanning buildings and compiling Building Information Models is needed. However, this is a multidisciplinary problem, requiring expertise in scanning, computer vision and videogrammetry, machine learning, and parametric object modelling. This paper outlines the technical approach proposed by a consortium of researchers that has gathered to tackle the ambitious goal of automating as-built modelling as far as possible. The top level framework of the proposed solution is presented, and each process, input and output is explained, along with the steps needed to validate them. Preliminary experiments on the earlier stages (i.e. processes) of the framework proposed are conducted and results are shown; the work toward implementation of the remainder is ongoing.
Resumo:
Measurements consisting of γ-ray excitation functions and angular distributions were performed using the (n,n′γ) reaction on Ni62. The excitation function data allowed us to check the consistency of the placement of transitions in the level scheme. From γ-ray angular distributions, the lifetimes of levels up to ~3.8 MeV in excitation energy were extracted with the Doppler-shift attenuation method. The experimentally deduced values of reduced transition probabilities were compared with the predictions of the quadrupole vibrator model and with large-scale shell model calculations in the fp shell configuration space. Two-phonon states were found to exist with some notable deviation from the predictions of the quadrupole vibrator model, but no evidence for the existence of three-phonon states could be established. Z=28 proton core excitations played a major role in understanding the observed structure. © 2011 American Physical Society.
Resumo:
The redistribution of fluorine during solid phase epitaxial regrowth (SPER) of preamorphized Si has been experimentally investigated, explained, and simulated, for different F concentrations and temperatures. We demonstrate, by a detailed analysis and modeling of F secondary ion mass spectrometry chemical-concentration profiles, that F segregates in amorphous Si during SPER by splitting in three possible states: (i) a diffusive one that migrates in amorphous Si; (ii) an interface segregated state evidenced by the presence of a F accumulation peak at the amorphous-crystal interface; (iii) a clustered F state. The interplay among these states and their roles in the F incorporation into crystalline Si are fully described. It is shown that diffusive F migrates by a trap limited diffusion mechanism and also interacts with the advancing interface by a sticking-release dynamics that regulates the amount of F segregated at the interface. We demonstrate that this last quantity determines the regrowth rate through an exponential law. On the other hand we show that neither the diffusive F nor the one segregated at the interface can directly incorporate into the crystal but F has to cluster in the amorphous phase before being incorporated in the crystal, in agreement with recent experimental observations. The trends of the model parameters as a function of the temperature are shown and discussed obtaining a clear energetic scheme of the F redistribution and incorporation in preamorphized Si. The above physical understanding and the model could have a strong impact on the use of F as a tool for optimizing the doping profiles in the fabrication of ultrashallow junctions. © 2010 The American Physical Society.